2SD1633 Search Results

2SD1633

Contextual Info: SavantIC Semiconductor Product Specification 2SD1633 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·High speed switching ·Good linearity of hFE APPLICATIONS ·Power switching applications PINNING PIN DESCRIPTION 1 Base 2

2SB1194

Abstract: 2SD1633
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·High DC Current Gain: hFE= 1500(Min)@ (VCE= -3V, IC= -3A) ·Complement to Type 2SD1633

2SB1194

Abstract: 2SD1633
Contextual Info: Power T ransistors 2SB1194 2SB1194 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Switching Complementary Pair with 2SD1633 •Features • • • • Unit • mm ,10.2max._ 5.7max. High speed switching Good linearity of DC current gain

2SD1633

Contextual Info: Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 100 V Collector-emitter voltage (Base open) VCEO 100 V Emitter-base voltage (Collector open) VEBO

2SD1633

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open) VCEO 100

2SD1633

Abstract: 2SB1194
Contextual Info: Inchange Semiconductor Product Specification 2SB1194 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1633 APPLICATIONS ・For power switching applications

Contextual Info: Power Transistors 2SD1633 2SD1633 Silicon PNP Triple-Diffused Planar Darlington Type P o w e r S w itching • P a c k a g e D im e n s io n s U nit I mm C o m p l e m e n ta r y P a ir with 2 S B 1 1 7 4 4. 4m ax. 10.2n ■ F e a tu r e s 5. 7max. 2 9ma\

2SD1633

Abstract: 2SB1194
Contextual Info: JMnic Product Specification 2SB1194 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1633 APPLICATIONS ・For power switching applications PINNING PIN

2sd1633

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open)

2SD1633

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open)

2SD1633

Abstract: TC 30i 2SB1174
Contextual Info: Power Transistors 2SD1633 2S D 1633 Silicon PNP Triple-Diffused Pianar Darlington Type Package Dim ensions Power Sw itching C om plem entary Pair w ith 2SB1174 U n it I mm 4 .4 m ax . 1 0.2m ax 5 .7 m ax . • Features 2 9ma\ • High sp eed sw itching • Good linearity of DC current gain hi-t

2SD1651

Abstract: 2SD1624 2SD1629 2sd1652 2SD1621 2SD1622 2SD1623 2SD1625 2SD1626 2SD1627
Contextual Info: - 258 - « Ta=25'C.*EPÍáTc=25‘C M 2SD1621 2SD1622 2SD1623 2SD1624 2SD1625 2SD1626 2SD1627 2SD1628 2SD1629 2SD1630 2SD1631 2SD1632 2SD1633 2SD1634 ¿ÓU1DÍ0 2SD1637 2SD1638 2SD1640 2SD1641 2SD1643 2SD1643A 2SD1645 2SD1646 2SD1647 2SD1649 2SD1650 2SD1651

2SB1194

Abstract: 2SD1633 Darlington pair IC high current
Contextual Info: Power Transistors 2SB1194 2SB1194 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Switching Complementary Pair with 2SD1633 • Features • High speed sw itching • Good linearity of DC c u rre n t gain Iif e • High collector c u rre n t (Ic)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

4336

Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
Contextual Info: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329

2SC3444

Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Contextual Info: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

LM1011N

Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44