D01B77 Search Results

LTc 5962

Abstract: 8864702GA RH101A RH1013M LTC1064-1AMJ LT1010MH 10Kn4 8856201 5962-8856201xa 0P-221
Contextual Info: \rm _ RH1Q13M TECHNOLOGY q UQ| Precision Operational Amplifier D€SCRIPTIOfl rbso lutc mnximum r r t ir g s Th e R H 1 0 1 3 M is th e firs t precision dual operational am pli­ S u p p ly V o lt a g e .± 2 2 V

Contextual Info: Power Transistors 2SD1633 2SD1633 Silicon PNP Triple-Diffused Planar Darlington Type P o w e r S w itching • P a c k a g e D im e n s io n s U nit I mm C o m p l e m e n ta r y P a ir with 2 S B 1 1 7 4 4. 4m ax. 10.2n ■ F e a tu r e s 5. 7max. 2 9ma\

Contextual Info: BiCMOSCIocked FIFO 64x36 IDT723611 In tegrated Device Technology, Inc. FEATURES: • Free-running CLKA and CLKB may be asynchronous or coincident permits simultaneous reading and writing of data on a single clock edge • 64 x 36 storage capacity • Synchronous data buffering from Port A to Port B

CY7C343

Abstract: CY7C343B
Contextual Info: CY7C343 » T C Y PR ESS Features CY7C343B 64-Macrocell MAX EPLD Functional Description • 64 MAX macrocells in 4 LABs • 8 dedicated inputs, 24 bidirectional I/O pins • Programmable interconnect array • 0.8-micron double-metal CMOS EPROM technology CY7C343

Contextual Info: SONY | CXK5T81OOOATN/AYN - 1 O L L X /1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK5T81 OOOATN/AYN is a high speed CMOS static RAM organized as 131072-words by 8-bits. Special feature are low power consumption and

Contextual Info: Transistors Switching 450V, 7A 2SK2299N • F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-source vo lta g e guaranteed at V gss= ± 3 0 V . 5) Easily designed drive circuits.

mosfet ftr 03

Abstract: FTR 02 2SK2459N SC-75A mosfet 4501 mosfet 2sk* to-92
Contextual Info: Transistors Switching 200V, 5A 2SK2459N •Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vqss = ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. •External dimensions (Units: mm)

D304 diode

Abstract: tr/P45/D304 diode
Contextual Info: • International ^R ectifier MÖSSM52 QQlb771 037 ■ INR INTERNATIONAL RECTIFIER b5E D SERIES IRK.F132 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F a s t re c o v e ry d io d e High su rg e c a p a b ility

Contextual Info: P o w er T ra n s is to rs 2SD1577 2SD1577 Silicon NPN Triple-Diffused Junction Mesa Type • Package D im ensions H orizontal D eflection O utput U n it ! mm ■ Features 15.5n 5 .2 m a x . 6.9n • High b re a k d o w n v o ltag e and high reliab ility by g lass p a ssiv atio n

DSP3210

Abstract: PC 845 MOTHERBOARD SERVICE MANUAL dd1277d dd127 DSP3210 application B33i dsp32c PC MOTHERBOARD intel 845 circuit diagram DSP3207 BI04-BI07
Contextual Info: AT&T Data Sheet January 1994 Microelectronics AT&T DSP3207 Digital Signal Processor The Solution for Concurrent Telephony and Audio for PCs ; V '• •* ;’V- t " /-S f, ì . f i Features and Benefits Feature 66 MHz 60 ns and 55 MHz (72 ns) operation @ 5 V