2SB929 Search Results

Contextual Info: Product specification 2SB929 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE sat .

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 emitter voltage 2SB929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature Tj Storage temperature

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SB0929, 2SB0929A 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 –60 emitter voltage 2SB0929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature

Contextual Info: Power Transistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD 1252, 2SD1252A Unit : mm 8.7 • Features • High DC current gain hre and good linearity • Low collector-emitter saturation voltage (V c el . u)

Contextual Info: Power Transistors 2SD1252, 2SD1252A 2SD1252, 2SD1252A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB929, 2SB929A • Features • H igh D C c u r re n t gain Iiff U n it : 3.7max. 8.7 n t— <1 l.l,max

Contextual Info: Product specification 2SB929A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE sat .

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0929 2SB929 and 2SB0929A (2SB929A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: Power T ransistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1252, 2SD1252A • Features . • High DC current gain lire and good linearity ' • Low collector-emitter saturation voltage ( V Cec« .o )

2SB929A

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB929A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

2SB929

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB929 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: 2SD1252, 2SD1252A Power Transistors 2S D 1252, 2S D 1252A Silicon N P N T rip le -D iffu s e d P la n a r Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB929, 2SB929A U n it ! mn 3.7max, • Features 8.7 n • H igh DC c u rre n t gain

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SB0929 2SB929 , 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0929A −60 V Collector-emitter voltage 2SB0929 (Base open) 2SB0929A

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB929 and 2SB929A 2.0 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 Emitter to base voltage VEBO 6 V Peak collector current ICP

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: Power Transistors 2SB952, 2SB952A 2SB952, 2SB952A Silicon PNP Epitaxial Planar Type Package Dimensions Unit ! mm Low Voltage Switching •i Features 3.7max. l.lmr—ax.* 8.? max. 6.5 max. • Low collector-eimitter saturation voltage VcEisau • High speed switching

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

2SD1039

Abstract: to-53 BUW64A
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220

2SA1302 TOSHIBA

Abstract: 2SA1302 Toshiba 2Sa1302 SB 1156 2sb817 2SB863 2SB1371 mitsubishi 1183 2SB1407 2SB1201
Contextual Info: - 64 - S € Type No. tt « Manuf. H # SANYO M S TOSHIBA S NEC S ÏZ HITACHI 8 ± Ü FUJITSU fé T MATSUSHITA 2SB 1 1 4 « fé T 2SB 1149— ' « 2S6 1151 , B « 2SB1165 2SB 1152 «5 T 2SB817 2SB 1153 fé T 2SB 1155" fâ T 2SB 1156 - fé T 2SB 1157 fé T 2SB776