2N6061 Search Results

2N6061

Abstract: C30A NPN TRANSISTORS LIST 2N6060 LA10A Solidev Semiconductors Solidev
Contextual Info: Semiconductors Solidev Silicon Power Transistors P H Y S I C A L D IM E N S IO N S Silicon NPN/PNP Power Transistors—60 Amp REFERENCE T A B L E Code Polarity Stock No. 2N6060 2N6061 NPN PNP 35077B 35078X A B S O L U T E M A X IM U M R A T IN G S 2N6060 2N6061

2N6061

Abstract: DSASW0036862
Contextual Info: Device Type VCEO hFE V Min/Max 2N6061 100 25/120 @ IC (A) 20.0 VCE (sat) @ IC (A) Max (V) 0.80 20.0 (MHz) PT MAX (W) 10.0 150.0 fT MIN * Case Type Chip Type TO-63 268

LT082

Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max

2N5969

Abstract: 2n6182 2N6031 i8080 2N6030 2N5876 2N5879 2N5880 2N5883 2N5954
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST m hF:E SAT . VOLTA GES M 'c (A 4 M in . M ax. 6 VCE (V) 4 20 60 6 4 6 80 80 6 4 TO-3 60 60 5 2N 5884 TO-3 80 80 2N 5954 TO -66 90 2N 5955 TO -66 2N 5956 X m PNP DEVICE BR EAKDOY V OLTAGE S (V) 0.5 1 2 20

TIP360

Abstract: b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 A, BLX84 2SB1079 B07460 B07460 RCA91160 B0750A B0750A B0751A B0751A B0750C ~g;~~g 15 20 B0751C MJ15004 RCA9116C 2SC2820 SSP72 TIP36 B0250 SSP72A ~~~~~A 25 30 2N5883 SSP72B B0250B TIP36B 2N5884 2N6436

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

Contextual Info: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840

SILICON TRANSISTOR CORP

Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
Contextual Info: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V

AP1069

Abstract: AP1112 2N5489 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275
Contextual Info: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 ZbC INC D O D O S B 11] S |~ D ~ fZ 3 3 ~ £ 00239 C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032

Contextual Info: 8368602 SOLITRON DEVICES INC TS 95D 02891 d ÊT| 03bflbDS D T~~ S S ~ 7 -ÆMron Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum

23741

Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
Contextual Info: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967

4233A

Abstract: 535x 184 324 DIODE 2N5383 2N3055C
Contextual Info: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8

Contextual Info: -Jfoutran P l M i M ? © Â ? M ,© ( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 68 CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" a lso available)

transistor c101

Abstract: c18v 2N6061 2N6382 2N5678 2N6377 SDT3604 SDT3901 SDT3904 c101 TRANSISTOR
Contextual Info: ^Ælltran MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

9300

Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
Contextual Info: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30

SPHV402

Abstract: TO36 TO114
Contextual Info: 8440355 SPACE SPACE POWER POWER E L E C T R O N I C S 89C ELECTRONICS "flT 00115 D T-3 3-0/ DE~|fl44Q3SS •••••US t Ni-Rel PLANAR POWER 60 AMP P B A S E T O E M I T T E R S A T U R A T I O N V O L T A G E 3.5 S w 2 . 0 UI CD > 1 . 5 ." 1 TA-" - 5 5

2N6187

Abstract: TO-59 2N6030 2N5876 2N5879 2N5880 2N5883 2N5884 2N5954 2N5955
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BR E A K D O \ WN V O LT A G E S n m CASE V CB V CE V EB 'c SAT . V O L T A GES M ax. 'c M in . M ax. (A) 'b (A) VCE (V) V BE (V) (A) 2N 5876 TO-3 80 80 6 4 4 20 100 4 0.5 1 2 2N 5879 TO-3 60 60 6 4 6 20

2N5940

Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
Contextual Info: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP

2N6960

Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
Contextual Info: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50

Contextual Info: ^Ælltran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

Contextual Info: 'SOLITRON DEVICES INC äh de^ I fl3L.ab02 O D o a s ö T a | _ 7 " ' 3 3 - / 7 ELEMENT NUMBER 268 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PNP EPITAXIAL PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 50.000A Aluminum FORMERLY 68 Collector: Polished Silicon

2N5685

Abstract: 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278
Contextual Info: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 INC D O D O S B 11] S ZbC 0 0 2 3 9 |~ D ~fZ33~£ C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032

2N4866

Contextual Info: 45 SILICON POWER TRANSISTORS O V CBO V < CASE TYPE TYPE NUMBER < in CUR R E N V EBO V M IN . hFE I M AX. r G A IN V CE V SATURATIOIV VO LTA G ES @ I 'c A V CE s V BE(s) V I V *C A I *B A 50 AMP SILICON NPN SDT9631 SDT9632 SDT9633 TO-63 TO-63 TO-63 250 275

AP1069

Abstract: 2N6274 AP1112 to63 2N5685 2N5686 2N5926 2N6032 2N6215 2N6275
Contextual Info: A P I ELECTRONICS INC 0043592 A P I _ 2^ ELECTRONICS DE 1 00435^5 DOODEaì S | ~ INC ZbC 00239 ~fZ33~£ COLLECTOR CURRENT = 5 0 AMPS NPN TYPES Device No C ase VCBO Volts VCEO (sus) Volts 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278