2N3045 Search Results

2N3043

Contextual Info: MOTORCLA SC XSTRS/R lE E F D | b3b7554 DOf lt .a ' ì b 2N3043 thru 2N3045 2N3048 MAXIMUM RATINGS Q | , CASE 610A-04, STYLE 1 Rating Symbol Value U nit VCEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage Vebo 5.0 Vdc *C 30 mAdc Collector-Emitter Voltage

2N3048

Abstract: 25CC 2N3043 2N3044 2N3045 C96d
Contextual Info: MOTOROLA SC -CXSTRS/R DËTJfc.3fa7E54 F> 00053=11 96D 82 39 1 6 3 6 7 2 5 4 MOTOROLA SC X S T R S / R F D - 2N3043 thru 2N3045 2N3048 CASE 610A-04, STYLE 1 Sym bol V a lu e U n it C olle ctor-E m itte r V oltag e V cE O 45 V dc C o lle ctor-B ase V olta g e

SC 3044

Abstract: et 3045
Contextual Info: MOTOROLA SC {XSTRS/R 6367254 F> Tb M OT O R O L A SC XSTRS/R D eT | L>3b7254 F 00053^1 96D 82391 D r - ^ - T - 7 2N3043 thru 2N3045 2N3048 M A XIM U M RATINGS CASE 610A-04, STYLE 1 Sym bol V alue Unit Collector-Emitter V oltage VCEO 45 V dc Collector-Base V oltage

Contextual Info: 2N3045/78 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10m

2N3043

Abstract: 2N3048 MIL-STD-750 2072 25CC 2N3044 2N3045 M558-01 M558-02 MIL-STD-750 method 1039
Contextual Info: MOTOROLA SC ÎXSTRS/R 6367254 FJ ”Tb MOTOROLA SC DF|b3t,7554 CXSTRS/R F 9 6D 00053^1 82391 D - 2N3043 thru 2N3045 2N3048 M A X IM U M RATINGS CASE 610A-04, STYLE 1 Symbol Value Unit Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2N3043

Abstract: IN455 2N3047 2N930 TEXAS INSTRUMENTS 2N3046
Contextual Info: TYPES 2N3043 THRU 2N3048 DUAL N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 0 8 , A U G U S T 1 9 6 3 - H E V t S E D A P R IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS AND HIGH-GAIN LOW-NOISE AUDIO AMPLIFIERS • Electrically Similar to 2N2639-2N2644 Series

DUAL TRANSISTORS IN TO77 PACKAGE

Abstract: 2N2222 Metal 2n2222 2n2484 complementary 2N4018 2N3800 2n2484
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUI V. PD (Total) hFE V CEO hFE @ SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

930 dtl

Abstract: la 4508 ic schematic diagram sn524a eel 19 2005 transformer sn15846n J 5027-R sn15846 CREATIVE 5507 transistor kc 2026 Jacinto
Contextual Info: Notes on This Fi rst Edition This first edition of TI's Integrated Circuits catalog contains currently published data sheets covering SOLID CIRCUIT semiconductor networks. As new data sheets are published, they will be distributed for insertion in the appropriate sections of this basic Tightleaf®

md918 Transistor

Abstract: germanium MM2264 2N3050 MC369G
Contextual Info: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro­

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: Type NPN A m bient PD PNP One Side mW Both Sides mW 2N2974 250 300 2N2975 250 2N2976 V CE Sat @ l c / l B H F E @ lc V CE V olts V EB Volts 45 45 6 300 45 45 250 300 45 2N2977 250 300 2N2978 250 2N2979 V CB Volts T racking Electrical Characteristics @ 25°C (One Side)

NPD5564

Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership

2N3050

Abstract: 2N2804 2N2640
Contextual Info: "SEMICONDUCTOR TECHNOLOGY GSE D | fll3t.45fl □□□0230^4 | r ^ f - 27 ËHÏ' SILICO N DUAL DIFFERENTIAL AMPLIFIER TRANSISTORS STIType Polarity Pow er Dissipation Total @ 2 5 °C ( M in .) hF E lc MATCHING v CE0 (volts) (Min.) (Max.) mA hFE(%) MW v b e (m v )

MD8003

Abstract: 2N2453 2N2916 2N3726 MD7003A MD6001 MD6001F MD6002 MD6002F MD6003
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) ID ? 2 2 Subscript Ref. Point hFE1 MD6001 MD6001F MD6002 MD6002F CG CG CG CG .575 0.35 .575 0.35 A A A A 30 30 30 30 MD6003 MD6003F MD6100 MD6100F MD7000 MD7001 CA CA CA CA NA PA .575 A

2n2484 complementary

Abstract: Metal 2n2222 2N2484 2N2222 DUAL TRANSISTORS IN TO77 PACKAGE 2N2222/2N2222 2N2222/2n2484 complementary
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUIV. PD (Total) ^FE V CEO SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484 45 2N2913

AC127

Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any