1N3650 Search Results

1N1124A

Abstract: 1N1124RA 1N1126A 1N1126RA 1N1128A 1N1128RA 1N3649 1N3649R 1N3650
Contextual Info: M IL-S-19500/104C 29 November 1965 SUPERSEDING M IL -S -19500/ 104B NAVY 17 August 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650 1N1124RA, 1N1126RA, 1N1128RA, 1N3649R, AND 1N3650R

DIODE 1N1206A

Abstract: 1n1124r 1N1124A 1N1126A 1N1128A 1N1202A 1N1204A 1N1206A 1N3649 1N3671A
Contextual Info: INCH-POUND MIL-PRF-19500/260F 10 December 1999 SUPERSEDING MIL-PRF-19500/260E 6 August 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A AND AR VERSIONS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N1202A JANTX microsemi

Abstract: 1N1202A 10-32NF-2B 1N1206A JANTX FED-STD-H28 1N1206A 1N1206AR DO-203AA 1N1202AR 1N1204A
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY POWER RECTIFIER Qualified per MIL-PRF-19500/260 • Glass Passivated Die • 240 Amps Surge Rating

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in power supply and other rectification applications.

diode 1n1124a

Abstract: 1N1128A HE 4011 IC HE 4011 1N1124A 1N1124RA 1N1126A 1N1126RA 1N1128RA 1N3649
Contextual Info: MIL S PECS ICJOOODISS 00D0700 1 | “ M IL-S-19500/104C 29 November 1965 S U P E R S E D IN G M IL- S- 19500/104B NAVY 17 August 1962 M IL IT A R Y S P E C IF IC A T IO N SEM IC O N D U C T O R D E V IC E , D IO D E, SIL IC O N , P O W E R R E C T IF IE R

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

MIL-S-19500

Abstract: MIL-S-19500-507 1N538 1N3189 JAN 1N3190 JAN1N3189 JAN1N538 1N3190 JAN JAN1N3190 1n547 equivalent
Contextual Info: MILITARY DEVICES The following table lists the device types available from Semicon Components Inc. which are manufactured and tested in accordance with the requirements of MIL-S-19500 Revision "G” and the appropriate indicated detail specification. TYPE NUMBER

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N3610

Abstract: 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227
Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in

LT3973-3.3

Abstract: IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731
Contextual Info: ^ discrete devices | jemitronicr hot line TO LL FREE NUM BER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Maximum Peak Reverse Voltage volts Type Maximum Average Forward Current (Amps) @ Case Temp. (°C ) Maximum

1N4537

Abstract: 1n3565 1N3574 1N4540 1N357 1N2370A 1N2512 1N3775 1n3923
Contextual Info: SE MI CO N C O M P O N E N T S INC 2flE D • fll3S157 0 0 0 0 5 3 4 7 ■ STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 lQ RATING TO 16 AMPS t rr TYPE VF TEMP CURRENT V °C AMPERES TEMP TEMP NUMBER PRV VOLTS 1N2362A 1N2364 1N2364A 1N2366 1N2366A 1400 1500

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1N1124A

Abstract: 1N1126A 1N1128A 1N1202A 1N1204A 1N1206A 1N3649 1N3671A 1N3673A DIODE 1N1206A
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 26 April 2010. MIL-PRF-19500/260L 26 January 2010 SUPERSEDING MIL-PRF-19500/260K 14 March 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

1N1115

Abstract: 1N255 MR1121 1N1118 1N1540 1N254 1N1116 MR1120R 1N1117 1N611
Contextual Info: MR1 120 th ru MR1 126 SILICON MR1128 MR1130 Medium-current silicon rectifiers featurehigh surge current capacity, and low forward voltage drop. CASE 245 (DO-4) M A X IM U M R A T IN G S Rating Symbol MR MR MR MR MR MR MR MR MR 1120 1121 1122 1123 1124 1125 1126 1128 1130

1N1120

Abstract: 1N2484 1N342 1N2226
Contextual Info: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500