ZL78 Search Results

ZL78

Abstract: 7C1001
Contextual Info: CY7C1001 CY7C1002 PRELIMINARY 256Kx 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C1001 and CY7C1002 are highperformance CMOS static RAMs orga­ nized as 262,144 x 4 bits with separate I/O. Easy memory expansion is provided by ac­

CY7C128A

Abstract: C128A CY7C128A-35PC CY7C128A-45DMB
Contextual Info: CY7C128A '= CYPRESS Features 2K x 8 Static RAM Functional D escription • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns 1 • Low active power — 440 mW commercial — 550 mW (military) • Low standby power

zl54

Abstract: zl58 YL162 lcd T1Z12 Diode t1z75 T1Y30 t1z47 ARM cortex R7 processor ZL56 t1z24
Contextual Info: Core Tile for ARM Cortex -R4F HBI-0196 User Guide Copyright 2009-2010 ARM Limited. All rights reserved. ARM DUI 0441B ID071010 Core Tile for ARM Cortex-R4F User Guide Copyright © 2009-2010 ARM Limited. All rights reserved. Release Information

CY7C128A

Abstract: 7C128 CY7C128A-45DMB CY7C128A-55DMB
Contextual Info: CYPRESS MbE D SEMICONDUCTOR • SSÖ'ibbS QÜ0b332 T -p L { W -l» WM CYPRESS SEMICONDUCTOR A utom atic pow er-dow n w hen deselected • ViH O f2.2V C M O S fo r o p tim u m speed/pow er Functional Description The CY7C128A is a high-performance CMOS static RAM organized as 2048

A12C

Abstract: CY7C107
Contextual Info: CYPRESS SEMICONDUCTOR 4bE D n 250=^2 GG ObB GG fl Q C Y P -T'Ut'Z3-0 5 CV7C107 PRELIMINARY 'M CYPRESS SEMICONDUCTOR l M x l Static R/W RAM Features Functional Description • Highspeed — *AA = 25 ns • CMOS for optimum speed/power • Low active power — 825 mW

Contextual Info: ADVANCED INFORMATION K ' ß SEMfcONDUC'I'OR 32,768 x 8 Static R/W RAM Features Functional Description • High speed The CY7B198 and CY7B199 are high-pcrformance BiCMOS static RAMs organized as 32,768 words by 8 bits. Easy memory ex­ pansion _is_provided by an active LOW chip

Contextual Info: CY7C187 CYPRESS SEMICONDUCTOR Features Functional Description • High speed — 15 ns • CMOS for optimum speed/power • Low active power — 495 mW • Low standby power — 220 mW • TTL compatible inputs and outputs • Automatic power-down when dese­

V32 Package

Abstract: CY7C1001 CY7C1002 7C10011
Contextual Info: PRELIMINARY ’# CYPRESS • H igh speed — tAA = 12 ns • T ransparent w rite 7C1001 • C M O S for optim um speed/pow er • Low active power — 910 rnW • Low standby power — 275 mW • 2.0V data retention (optional) — lOfl |iW • 256K x 4 Static RAM

3545C

Abstract: CLE19
Contextual Info: K CY7C128A SEMICONDUCTOR Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns 2048 x 8 Static R /W RAM • Capable o f w ithstanding greater than 2001V electrostatic discharge D ata on the eight I/O pins I/Oo through I/O?

7C109A-20

Abstract: 7C109A
Contextual Info: CY7C109A PRELIMINARY S F # SEMICONDUCTOR 128K x 8 Static RAM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is

CY7C1006

Contextual Info: CY7C1006 PRELIMINARY JL Jfc JL * JLwl 256K x 4 Static RAM Features Functional Description • High speed The CY7C1006 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable

Contextual Info: CY7C128A 0 CYPRESS Features 2K x 8 Static RAM Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns [ • Low active power — 440 mW commercial — 550 mW (military) • Low standby power

Contextual Info: CY7C1006 PRELIMINARY 256Kx 4 Static RAM Features Functional Description • High speed The CY7C1006 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable CE , an active LOW output enable (UE),

A10C

Abstract: CY7C106 C1089 7C106
Contextual Info: CYPRESS SEMICONDUCTOR 4bE D O □ 0 G b 2 cm b OCYP 'T - % - Z 3 .-Ì -0 CY7C106 PRELIMINARY CYPRESS SEMICONDUCTOR 262,144 x 4 Static R/W RAM Features Functional Description • Highspeed — U a = 25 ns • CMOS for optimum speed/power • Low active power

Contextual Info: CY7C106 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 4 Static R/W RAM Features F unctional D escription • T h e CY7C106 is a high-perform ance CM O S static R A M organized as 262,144 words by 4 bits. Easy m em ory expansion is provided by an active L O W chip e nable

7C109

Abstract: CY7C109 ddgt A14C C106 cy7c109-45dmb cy7c109-35dmb
Contextual Info: CYPRESS SEMICONDUCTOR 4 bE WM 'cSEMICONDUCTOR y p re ss D a ES&SbbB DG0b30b 1 E1CYP CY7C108 CY7C109 PRELIMINARY 131,072 x 8 Static R/W RAM Features Functional Description • H ighspeed — U a = 25 ns • CMOS for optimum speed/power • Low active power

10DC IR 3 PINS

Abstract: CY7C164 7C166 CY7C166 7C164-10 Cypress 7C166 ice power 200 asc A10C A12C CY7C164-20PC
Contextual Info: CYPRESS SEMICONDUCTOR MLtE D □ 2 5 0 ^ 2 D0Db47ti l0 CY7C164 CY7C166 C^ iö CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM Functional Description A utom atic power-down w hen deselected O utput Enable OG feature (7C166) CM OS for optimum speed/power

IR LFN

Abstract: CY7C161 CY7C162
Contextual Info: CYPRESS SEMI COND UCTOR MbE D H aSfl^bLE 5 I ICYP ODDbMM? Features • Automatic power-down when deselected • Transparent write 7061 • CMOS for optimum speed/power • Highspeed — 15 ns U a • Low active power — 633 mW ‘ • Low standby power

ge c147

Abstract: CY7C147-35KMB
Contextual Info: _ CY7C147 SEMICONDUCTOR 4096 x 1 Static RAM F eatures F unctional D escription • Automatic power-down when dese­ lected The CY7C147 is a high-performance CMOS static RAMs organized as 4096 words by 1 bit. Easy memory expansion is