CY7C1006 Search Results

A10C

Abstract: CY7C1006
Contextual Info: CYPRESS SEMICO NDU CTOR MbE » I aSflìbbé QD0ti7Q4 T • CY7C1006 ADVANCED INFORMATION. CYPRESS SEMICONDUCTOR 256K x 4 Static R/W RAM Features Functional Description • Highspeed — U a = 15 ns • CMOS for optimum speed/power • Low active power — 800mW

Contextual Info: 7S C Y P R E S S CY7C1006 p r e l im in a r y 256Kx 4 Static RAM Features Functional Description • High speed T he CY7C1006 is a high-perform ance CM OS static RA M organized as 262,144 words by 4 bits. Easy m em ory expansion is provided by an active LO W chip enable

Contextual Info: fax id: 1052 W CY7C106 CY7C1006 / C Y P R E S S _ 256K x 4 Static RAM an active LO W o u tp u t enable OE , and th re e -sta te drivers. T h e se devices have an au tom atic pow e r-d ow n fea tu re th a t re­ du ces pow er con sum p tion by m ore than 65% w h e n th e d e vic­

C106B4

Abstract: C106B CY7C1006B CY7C106B c106b1 equivalent
Contextual Info: 006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.

CY7C1006D

Abstract: CY7C106D CY7C106D-10VXI 7C106D
Contextual Info: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

Contextual Info: ÏS W CYPRESS SEMICONDUCTOR 256Kx 4 Static RAM Features Functional Description • High speed T h e CY7C1006 is a high-perform ance CM O S static R A M organized as 262,144 w ords by 4 bits. Easy m em ory expansion is p rovided by an active L O W chip enable

C1061 pin configuration

Abstract: CY7C1006 CY7C106 CY7C1061
Contextual Info: fax id: 1052 w / CY7C106 CY7C1006 C Y P R E S S 256K x 4 Static RAM an active LOW output enable OE , and three-state drivers. These devices have an automatic power-down feature that re­ duces power consumption by more than 65% when the devic­ es are deselected.

Contextual Info: 7c10 0 6 :1 1-25-91 Revision: Tuesday, December 22,1992 CY7C1006 PRELIMINARY CYPRESS sÈr SEMICONDUCTOR 256K x 4 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power The CY7C1006 is a high-performance CMOS static RAM organized as 262,144

Contextual Info: ss 256Kx 4 Static RAM Features Functional Description • High speed T h e CY7C1006 is a high-perform ance C M O S static R A M organized as 262,144 w ords by 4 bits. Easy m em ory expansion is provided by an active L O W chip e nable C E , an active L O W o u tp u t enable (O E ),

Contextual Info: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

C1006

Abstract: CY7C1006 C1006-9 C1006-10
Contextual Info: PRELIMINARY CY7C1006 256K x 4 Static RAM Features D D D D D D Functional Description The CY7C1006 is a highĆperformance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable CE , an active LOW output enable (OE),

Contextual Info: CY7C106D CY7C1006D PRELIMINARY 1-Mbit 256K x 4 Static RAM Functional Description[1] Features The CY7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state

c1069

Abstract: C1061 pin configuration C1061 CY7C1061 C1061 equivalent CY7C10612 7C106 C106 CY7C1006 CY7C106
Contextual Info: 006 CY7C106 CY7C1006 256K x 4 Static RAM Features an active LOW output enable OE , and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed

C106B

Abstract: CY7C1006B CY7C106B 7C106B-12
Contextual Info: CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed

C1006

Abstract: CY7C1006 C1006 transistor Transistor c1006
Contextual Info: 1CY 7C10 06 PRELIMINARY CY7C1006 256K x 4 Static RAM Features output enable OE , and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed — tAA = 12 ns • CMOS for optimum speed/power

C106B2

Abstract: c106b1 equivalent C106B C106B4 C106B3 C106B TO-2
Contextual Info: CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.

1709 013

Abstract: CY7C1006D CY7C106D CY7C106D-10VXI
Contextual Info: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

Contextual Info: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

C106B

Abstract: CY7C1006B CY7C106B CY7C1006B-15VC c106b1 equivalent
Contextual Info: CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.

Contextual Info: : CY7C1006 ADVANCED INFORMATION SEMICONDUCTOR 2 5 6 K x 4 Static R/W RAM Features Functional Description • H ighspeed T h e C Y 7 C 1 0 0 6 is a h ig h -p e rfo rm a n c e C M O S s ta tic R A M o rg a n iz e d a s 262,144 w o rd s by 4 bits. E a sy m e m o ry e x p a n sio n is

Contextual Info: CY7C1006 PRELIMINARY 256Kx 4 Static RAM Features Functional Description • High speed The CY7C1006 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable CE , an active LOW output enable (UE),

C1061

Abstract: CY7C1061 C106A transistor c106 C106 CY7C1006 CY7C106 C1066 C1065 C1062
Contextual Info: CY7C106 CY7C1006 256K x 4 Static RAM Features an active LOW output enable OE , and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed — tAA = 12 ns

CY7C1006BN

Abstract: CY7C106BN
Contextual Info: CY7C106BN CY7C1006BN 256K x 4 Static RAM Features Functional Description The CY7C106BN and CY7C1006BN are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and

Contextual Info: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS standby power • • • •