CY7C10612 Search Results
CY7C10612 Datasheets (11)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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CY7C10612DV33-10ZSXI |
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16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V; | Original | 364.16KB | 10 | ||
CY7C10612DV33-10ZSXI |
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Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 10NS 54TSOP | Original | 14 | |||
CY7C10612DV33-10ZSXIT |
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16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V; | Original | 364.16KB | 10 | ||
CY7C10612DV33-10ZSXIT |
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Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 10NS 54TSOP | Original | 14 | |||
CY7C10612G30-10ZSXI |
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Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 54TSOP | Original | 363.17KB | |||
CY7C10612G30-10ZSXIT |
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Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 54TSOP | Original | 363.17KB | |||
CY7C10612GE30-10ZSXI |
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Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 54TSOP | Original | 363.17KB | |||
CY7C10612GE30-10ZSXIT |
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Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 54TSOP | Original | 363.17KB | |||
CY7C10612GN30-10ZSXI |
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ASYNC SRAMS | Original | 1.97MB | |||
CY7C10612GN30-10ZSXIT |
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ASYNC SRAMS | Original | 1.97MB | |||
CY7C106-12VC |
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256K x 4 Static RAM | Original | 207.95KB | 8 |
CY7C10612 Price and Stock
Infineon Technologies AG CY7C10612G30-10ZSXIIC SRAM 16MBIT PAR 54TSOP II |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CY7C10612G30-10ZSXI | Tray | 76 | 1 |
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CY7C10612G30-10ZSXI | Tray | 15 Weeks | 216 |
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CY7C10612G30-10ZSXI | 127 |
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CY7C10612G30-10ZSXI | 432 | 1 |
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CY7C10612G30-10ZSXI | 131 | 1 |
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CY7C10612G30-10ZSXI | Tray | 231 | 0 Weeks, 1 Days | 1 |
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CY7C10612G30-10ZSXI | 16 Weeks | 216 |
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CY7C10612G30-10ZSXI | 216 |
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Infineon Technologies AG CY7C10612DV33-10ZSXIIC SRAM 16MBIT PAR 54TSOP II |
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CY7C10612DV33-10ZSXI | Tube |
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CY7C10612DV33-10ZSXI | Tray | 5 |
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CY7C10612DV33-10ZSXI | 25,965 |
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FLIP ELECTRONICS CY7C10612DV33-10ZSXIIC SRAM 16MBIT PAR 54TSOP II |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CY7C10612DV33-10ZSXI | Tray | 5 |
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Infineon Technologies AG CY7C10612GN30-10ZSXIIC SRAM 16MBIT PAR 54TSOP II |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CY7C10612GN30-10ZSXI | Tray | 1,080 |
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CY7C10612GN30-10ZSXI | Tray | 15 Weeks | 1,080 |
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CY7C10612GN30-10ZSXI |
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Infineon Technologies AG CY7C10612GE30-10ZSXIIC SRAM 16MBIT PAR 54TSOP II |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CY7C10612GE30-10ZSXI | Tray |
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CY7C10612GE30-10ZSXI | Tray | 1,080 |
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CY7C10612 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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CY7C1061
Abstract: CY7C10612DV33-10ZSXI
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Original |
CY7C10612DV33 16-Mbit CY7C10612DV33 I/O15) CY7C1061 CY7C10612DV33-10ZSXI | |
CY7C1061Contextual Info: CY7C10612DV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C10612DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power |
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CY7C10612DV33 16-Mbit CY7C10612DV33 I/O15) CY7C1061 | |
Contextual Info: CY7C10612G CY7C10612GE PRELIMINARY 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features • High speed ❐ tAA = 10 ns ■ Embedded error-correcting code (ECC) for single bit error correction ■ Low active power ❐ ICC = 90mA typical ■ |
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CY7C10612G CY7C10612GE 16-Mbit 54-pin | |
CY7C10612DV33-10ZSXIContextual Info: CY7C10612DV33 16-Mbit 1M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C10612DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ ICC = 175 mA at 10 ns ■ Low CMOS standby power |
Original |
CY7C10612DV33 16-Mbit CY7C10612DV33 CY7C10612DV33-10ZSXI | |
philips diode PH 33J
Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
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10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY | |
CY7C1061Contextual Info: C Y 7 C 1 0 6 C Y 7 C 1 0 0 6 256K x 4 Static RAM an active LOW output enable OE , and three-state drivers. These devices have an automatic power-down featurethat re duces power consumption by more than 65% when the devic es are deselected. Features • High speed |
OCR Scan |
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UM61256FK-15
Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
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74F257, 74FCT257, 74FCT257T QS32257 QS3257 QS32257 UM61256FK-15 YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624 |