7C106 Search Results

Contextual Info: 7C106A PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed T he C Y 7C106A is a high-perform ance C M O S static R A M organized as 262,144 w ords by 4 bits. Easy m em ory expansion is provided by an active L O W chip enable

Contextual Info: 7c106A: Thursday, November 19,1992 Revision: Thursday, February 18,1993 7C106A 256Kx 4 Static RAM PRELIMINARY CYPRESS : SEMICONDUCTOR Features Functional Description The 7C106A is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is

Contextual Info: SEMICONDUCTOR Functional Description • High speed T he C Y 7C106A is a high-perform ance C M O S static R A M organized as 262,144 w ords by 4 bits. Easy m em ory expansion is provided by an active L O W chip e nable C E , an active L O W o u tp u t enable (O E ),

Contextual Info: 7C106A PRELIMINARY y CYPRESS 256K x 4 Static RAM Features Functional D escription • High speed T he 7C106A is a high-perform ance CM O S static R A M organized as 262,144 words by 4 bits. Easy m em ory expansion is provided by an active LO W chip enable

Contextual Info: 7C106 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 4 Static R /W RAM Features Functional Description • High speed - U à = 25 ns T he 7C106 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable

CY7C106A-20VC

Contextual Info: 7C106A PRELIMINARY 256Kx 4 Static RAM Functional Description Features • H ig h The 7C106A is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable CE , an active LOW output enable (UE),

C106B4

Abstract: C106B CY7C1006B CY7C106B c106b1 equivalent
Contextual Info: 006B 7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.

Contextual Info: L Q Q IC 7C106 25 6 K x 4 Static RA M D E V IC E S IN C O R P O R A I h . FEATURES DESCRIPTION □ 256K x 4 Static R A M w ith Chip Select Pow erd ow n, O utpu t E nable □ A uto-Pow erdow n Design □ A dvanced C M O S T echnology □ H igh Speed — to 17 ns m axim um

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

CY7C1006D

Abstract: CY7C106D CY7C106D-10VXI 7C106D
Contextual Info: 7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with 7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

7C106

Abstract: FE 1.1s
Contextual Info: 7C106 P R ELIM IN A RY CYPRESS SEMICONDUCTOR 262,144 x 4 Static R/W RAM Features Functional Description • High speed T h e C Y 7 C 1 0 6 is a h ig h -p e rfo rm a n c e C M O S s ta tic R A M o rg a n iz e d a s 262,144 w o rd s by 4 bits. E a sy m e m o ry ex p a n sio n is

CY7C106A

Contextual Info: PRELIMINARY 7C106A 256K x 4 Static RAM Features D D D D D D The 7C106A is a highĆperformance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable CE , an active LOW output enable (OE), and threeĆstate drivers. The device has an

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

Contextual Info: ^ A T bT Preliminary Data Sheet January 1992 7C106 Microelectronics High-Speed CMOS SRAM 1 Mbit 256K X 4 , Common I/O Features • Low-power operation — Active: 635 mW maximum at 25 ns — Standby (typical): 110 mW (TTL inputs); 11 mW (CMOS inputs) ■ Highspeed— 15 ns maximum access time

C1061 pin configuration

Abstract: CY7C1006 CY7C106 CY7C1061
Contextual Info: fax id: 1052 w / 7C106 CY7C1006 C Y P R E S S 256K x 4 Static RAM an active LOW output enable OE , and three-state drivers. These devices have an automatic power-down feature that re­ duces power consumption by more than 65% when the devic­ es are deselected.

CY7C106A

Contextual Info: Ç7C106A PRELIMINARY 256K x 4 Static RAM Features Functional Description • High speed The 7C106A is a high-performance CM OS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LO W chip enable C E , an active LOW output enable (O E ),

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

Contextual Info: 7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with 7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

Contextual Info: 7C106D CY7C1006D PRELIMINARY 1-Mbit 256K x 4 Static RAM Functional Description[1] Features The 7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state

c1069

Abstract: C1061 pin configuration C1061 CY7C1061 C1061 equivalent CY7C10612 7C106 C106 CY7C1006 CY7C106
Contextual Info: 006 7C106 CY7C1006 256K x 4 Static RAM Features an active LOW output enable OE , and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed

C106B

Abstract: CY7C1006B CY7C106B 7C106B-12
Contextual Info: 7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed

CC4 22

Contextual Info: iPR 1 9 1993 = A TaT Preliminary Data Sheet January 1992 7C106 Microelectronics High-Speed CMOS SRAM, 1 Mbit 256K x 4 Common I/O, Output Enable Features • Low-power operation — Active: 635 mW maximum at 25 ns — Standby (typical): 110 mW (TTL inputs):

CY7C106A-15vc

Abstract: CY7C106A-20VC C106A CY7C106A
Contextual Info: 1CY 7C10 6A PRELIMINARY 7C106A 256K x 4 Static RAM Features output enable OE , and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed — tAA = 12 ns • CMOS for optimum speed/power

verilog for SRAM 512k word 16bit

Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18