7C1006 Search Results

CY7C1016

Abstract: A0231 A2429 C10161
Contextual Info: 7c1006: 11-25-91 Revision: April 10, 1995 ADVANCED INFORMATION CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is D provided by an active LOW chip enable Ċ CE , an active LOW output enable (OE), and threeĆstate drivers. The device has an

C1016

Abstract: C10161
Contextual Info: 7c1006:11-25-91 Revision: April 10,1995 CY7C1016 ADVANCED INFORMATION 256K x 4 Static RAM CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable CE , an active LOW output enable (OE), and three-state drivers. The device has an

A10C

Abstract: CY7C1006
Contextual Info: CYPRESS SEMICO NDU CTOR MbE » I aSflìbbé QD0ti7Q4 T • 7C1006 ADVANCED INFORMATION. CYPRESS SEMICONDUCTOR 256K x 4 Static R/W RAM Features Functional Description • Highspeed — U a = 15 ns • CMOS for optimum speed/power • Low active power — 800mW

Contextual Info: 7S C Y P R E S S 7C1006 p r e l im in a r y 256Kx 4 Static RAM Features Functional Description • High speed T he 7C1006 is a high-perform ance CM OS static RA M organized as 262,144 words by 4 bits. Easy m em ory expansion is provided by an active LO W chip enable

C106B4

Abstract: C106B CY7C1006B CY7C106B c106b1 equivalent
Contextual Info: 006B CY7C106B 7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

CY7C1006D

Abstract: CY7C106D CY7C106D-10VXI 7C106D
Contextual Info: CY7C106D 7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

Contextual Info: ÏS W CYPRESS SEMICONDUCTOR 256Kx 4 Static RAM Features Functional Description • High speed T h e 7C1006 is a high-perform ance CM O S static R A M organized as 262,144 w ords by 4 bits. Easy m em ory expansion is p rovided by an active L O W chip enable

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

C1061 pin configuration

Abstract: CY7C1006 CY7C106 CY7C1061
Contextual Info: fax id: 1052 w / CY7C106 7C1006 C Y P R E S S 256K x 4 Static RAM an active LOW output enable OE , and three-state drivers. These devices have an automatic power-down feature that re­ duces power consumption by more than 65% when the devic­ es are deselected.

Contextual Info: 7c10 0 6 :1 1-25-91 Revision: Tuesday, December 22,1992 7C1006 PRELIMINARY CYPRESS sÈr SEMICONDUCTOR 256K x 4 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power The 7C1006 is a high-performance CMOS static RAM organized as 262,144

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

Contextual Info: ss 256Kx 4 Static RAM Features Functional Description • High speed T h e 7C1006 is a high-perform ance C M O S static R A M organized as 262,144 w ords by 4 bits. Easy m em ory expansion is provided by an active L O W chip e nable C E , an active L O W o u tp u t enable (O E ),

Contextual Info: CY7C106D 7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

C1006

Abstract: CY7C1006 C1006-9 C1006-10
Contextual Info: PRELIMINARY 7C1006 256K x 4 Static RAM Features D D D D D D Functional Description The 7C1006 is a highĆperformance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable CE , an active LOW output enable (OE),

Contextual Info: CY7C106D 7C1006D PRELIMINARY 1-Mbit 256K x 4 Static RAM Functional Description[1] Features The CY7C106D and 7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state

c1069

Abstract: C1061 pin configuration C1061 CY7C1061 C1061 equivalent CY7C10612 7C106 C106 CY7C1006 CY7C106
Contextual Info: 006 CY7C106 7C1006 256K x 4 Static RAM Features an active LOW output enable OE , and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed

C106B

Abstract: CY7C1006B CY7C106B 7C106B-12
Contextual Info: CY7C106B 7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed

CY7C1006

Contextual Info: 7C1006 PRELIMINARY JL Jfc JL * JLwl 256K x 4 Static RAM Features Functional Description • High speed The 7C1006 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable

verilog for SRAM 512k word 16bit

Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18

C1006

Abstract: CY7C1006 C1006 transistor Transistor c1006
Contextual Info: 1CY 7C10 06 PRELIMINARY 7C1006 256K x 4 Static RAM Features output enable OE , and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed — tAA = 12 ns • CMOS for optimum speed/power

C106B2

Abstract: c106b1 equivalent C106B C106B4 C106B3 C106B TO-2
Contextual Info: 7C1006B CY7C106B 7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.

1709 013

Abstract: CY7C1006D CY7C106D CY7C106D-10VXI
Contextual Info: CY7C106D 7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

Contextual Info: CY7C106D 7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA