CY7C108 Search Results

Contextual Info: CY7C1081DV33 64-Mbit 4 M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1081DV33 is a high-performance CMOS static RAM organized as 4,194,304 words by 16 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)

CY7C1088

Abstract: o428 IO113 8A2512
Contextual Info: ADVANCED INFORMATION CY7C1088 128K x 9 Static RAM Features D D D D D D Functional Description High speed Ċ The CY7C1088 is a highĆperformance CMOS static RAM organized as 131,072 words by 9 bits. Easy memory expansion is provided by an active LOW chip enable

CY7C1089DV33

Contextual Info: CY7C1089DV33 64-Mbit 8M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1089DV33 is a high-performance CMOS static RAM organized as 8,388,608 words by 8 bits. ■ Low active power ❐ ICC = 300 mA ■ Low complementary metal oxide semiconductor (CMOS)

Contextual Info: CY7C1089DV33 64-Mbit 8 M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1089DV33 is a high-performance CMOS static RAM organized as 8,388,608 words by 8 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)

CY7C1081DV33

Contextual Info: CY7C1081DV33 64-Mbit 4 M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1081DV33 is a high-performance CMOS static RAM organized as 4,194,304 words by 16 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)

CY7C1081DV33-12BAXI

Contextual Info: CY7C1081DV33 64-Mbit 4 M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1081DV33 is a high-performance CMOS static RAM organized as 4,194,304 words by 16 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)

Contextual Info: CY7C1089DV33 64-Mbit 8 M x 8 Static RAM Functional Description Features • High speed ❐ tAA = 12 ns The CY7C1089DV33 is a high-performance CMOS static RAM organized as 8,388,608 words by 8 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)

Contextual Info: CY7C1081DV33 64-Mbit 4 M x 16 Static RAM Functional Description Features • High speed ❐ tAA = 12 ns The CY7C1081DV33 is a high-performance CMOS static RAM organized as 4,194,304 words by 16 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)

7C109

Abstract: CY7C109 ddgt A14C C106 cy7c109-45dmb cy7c109-35dmb
Contextual Info: CYPRESS SEMICONDUCTOR 4 bE WM 'cSEMICONDUCTOR y p re ss D a ES&SbbB DG0b30b 1 E1CYP CY7C108 CY7C109 PRELIMINARY 131,072 x 8 Static R/W RAM Features Functional Description • H ighspeed — U a = 25 ns • CMOS for optimum speed/power • Low active power

a9ah

Contextual Info: CY7C1088 128K x 9 Static RAM ADVANCED INFORMATION Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention The CY7C1088 is a high-performance

Contextual Info: CY7C108 CY7C109 PRELIMINARY CYPRESS SEMICONDUCTOR 131,072 x 8 Static R/W RAM Features F unctional D escription • H igh speed T h e C Y 7 C 108 a n d C Y 7 C 1 0 9 a r c h ig h -p e rfo rm a n c e C M O S s ta tic R A M s o r g a n iz e d a s 131,072 w o rd s by 8 b its. E a sy m e m o ry ex ­

7C109-35

Abstract: 7C108
Contextual Info: K 'ß CY7C108 CY7C109 AD VAN CED IN F O R M A TIO N SEMICONDUCTOR 131,072 x 8 Static R/W RAM Features F unctional D escription • High speed T h e CY7C108 and CY7C109 are high-per­ form ance C M O S static R A M s organized as 131,072 words by 8 bits. Easy m em ory expansion is provided by an active L O W chip

Contextual Info: ^ SS WS CYPRESS PRELIMINARY , .^= 131,072 x 8 Static R/W RAM SEMICONDUCTOR Features Functional Description • H ighspeed — tAA = 25 ns T h e CY 7C108 an d CY 7C109 are high-perform anceC M O S static R A M s organized as 131,072 w ords by 8 bits. Easy m em ory ex­

232Z2

Abstract: 109kc
Contextual Info: — “ “ _ ._——— L7C108/109 jtv î;fs incorpüha i - . 12 8K x 8 Static R A M Low Power DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum

98-LD

Contextual Info: L7C1 n a/m g L 7 C 1 0 3 /1 OS IJbVIÜI-S INuuHHÜKA I H □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □Auto-Powerdown Design □Advanced CMOS Technology □High Speed — to 10 ns maximum □Low Power Operation Active: 570 mW typical at 15 ns

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

EME-6300H

Abstract: 6300H mos die CY7C1399 CY7C197 CY7C199
Contextual Info: Qualification Report June, 1995 - QTP# 94465 Version 1.0 RAM2.8 TRANSISTOR FOR RAM2.5 PROCESS PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:

Contextual Info: I 7 n in a /in Q v wms _mt — DEVICES INCORPORATED FEATURES 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum

Contextual Info: £ O Q l C D E V IC E S IN C O R P O R A T E D L 7 C 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power ESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 17 ns maximum

CY7C1088

Contextual Info: CYPRESS Features • • C M O S for optim um speed/pow er Low active power — 1020 mW • Low standby power — 250 mW • 2.0V d ata retention — 100 ^W • A vailable in p la stic 32-p in 4 00-m il SO J • A utom atic power-down when d eselected •

CY62256LL-PC

Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
Contextual Info: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2

EDI88128C-100

Abstract: EDI88128C-35 EDI88128C-55 EDI88128C-70 ED188130LPS im628 ED188130C Hitachi Scans-001 ED188130CS-20 ed188130cs
Contextual Info: - IM ïSÆEffl m £ tt £ CC CMOS x TAAC •ax ns) TCAC ■ax (ns) TOE nax (ns) TOH nin (ns) RAM ( 1 3 1 , 0 7 2 x 8 ) S t a t i c * a y / TOD ■ax (ns) TffP »in (ns) m 14 TDS nin (ns) TDH sin (ns) TIW) min (ns) TttR nax (ns) VDD o r V C C (V) IW> max

a1012L

Contextual Info: L Ö Q IC L7C108/109 128K x 8 Static RA M D E V I C E S INCORHHHATE ' DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation

CXK581020

Abstract: L7C109WC25 L7C109WI17 5962-89598 smd diode K10 smd transistor A6 3 MT5C1008 L7C109WI20 L7C108YMB25 L7C108DMB25
Contextual Info: L7C108/109 128K x 8 Static RAM L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 17 ns maximum