L7C109 Search Results

L7C108WI15

Abstract: mt5c1008 62L26A
Contextual Info: L7C108/109 L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM Low Power 128K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION O CE 1 WE OE CE 2 (L7C109 only) ROW SELECT ROW ADDRESS 9 CONTROL consume only 1.5 mW (typical), at 3 V, allowing effective battery backup

Contextual Info: PRELIMINARY INFORMATION L7C108 L7C109 128K x 8 Static RAM Pin Configuration 32-pin Ceramic DIP 32-pin Ceramic SOJ NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17

128K x 8 Static RAM

Abstract: 5962-8959812MYA 5962-8959810MZ
Contextual Info: L7C108 L7C109 128K x 8 Static RAM Pin Configuration     32-pin Ceramic DIP 32-pin Ceramic SOJ NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13

232Z2

Abstract: 109kc
Contextual Info: — “ “ _ ._——— L7C108/109 jtv î;fs incorpüha i - . 12 8K x 8 Static R A M Low Power DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum

98-LD

Contextual Info: L7C1 n a/m g L 7 C 1 0 3 /1 OS IJbVIÜI-S INuuHHÜKA I H □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □Auto-Powerdown Design □Advanced CMOS Technology □High Speed — to 10 ns maximum □Low Power Operation Active: 570 mW typical at 15 ns

Contextual Info: I 7 n in a /in Q v wms _mt — DEVICES INCORPORATED FEATURES 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum

Contextual Info: £ O Q l C D E V IC E S IN C O R P O R A T E D L 7 C 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power ESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 17 ns maximum

L29C* 8 pin SMD

Abstract: 5962-88733 barrel shifter 32-bit 18 x 16 barrel shifter LF2246 LF2247 LF2249 LF2250 LF2272 LF3310
Contextual Info: DEVICES INCORPORATED DSP PRODUCTS PART NO. SPEED ns COM. MIL. PRODUCT DESCRIPTION PACKAGE AVAILABILITY VIDEO IMAGING PRODUCTS LF2242 12/16-bit Half-Band Digital Filter 25 — 44-lead PLCC/PQFP LF2246 LF2247 LF2249 11 x 10-bit Image Filter 11 x 10-bit Image Filter with Coefficient RAM

a1012L

Contextual Info: L Ö Q IC L7C108/109 128K x 8 Static RA M D E V I C E S INCORHHHATE ' DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation

CXK581020

Abstract: L7C109WC25 L7C109WI17 5962-89598 smd diode K10 smd transistor A6 3 MT5C1008 L7C109WI20 L7C108YMB25 L7C108DMB25
Contextual Info: L7C108/109 128K x 8 Static RAM L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 17 ns maximum

MMDJ-65608EV-30MQ

Abstract: 5962-8959804MUA QP7C1009B-20DMB 5962-89598 EDI88128LPS70LB PDM41024S20L32 5962-8959824 PDM41024S45TC a3021 EDI88128CS85ZB
Contextual Info: REVISIONS LTR DESCRIPTION H Add device type 41. Make corrections to case outline N, dimension b. Add vendor CAGE 65786 as source of supply for device type 41. Update boilerplate. Editorial changes throughout. 97-03-26 Raymond Monnin J Add device types 42, 43, 44, 45, and 46. Editorial changes to pages

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

PDM41024S25

Abstract: CY7C1009-20DMB SMJ5C1008-25HMM 5962-89598 qml-38535 S128K8L-55MC pdm41024l25tcb PDM41024-S20L32 PDM41024L20TCB GDIP1-T32
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Redrawn with changes. Update case X to standard package. Add case 8. Add vendor CAGE 66301 as source of supply for case 8. Convert document to updated SMD boilerplate. Editorial changes throughout. 93-09-30

Contextual Info: l o L 7 C 10 8 /10 9 128K x 8 Static RAM g i c D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

L7C108WC25

Abstract: MT5C1008 l7c109wi25
Contextual Info: L7C108/109 L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM Low Power 128K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology

Contextual Info: L 7 C 1 0 8 / 1 0 9 128K x 8 Static R A M L o w Power □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation Active: 550 mW typical at 25 ns

Contextual Info: jjjm MMMM ÆmSmmkjjjjjj jmSSm L 7C 108/109 „ „ „ I mm DEVICES INCORPORATED DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, O utput Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum

Contextual Info: L 7 C 1 0 8 /1 0 9 128K x 8 Static RAM Low Power DEVICES INCORPORATED FEATURES □ 128K x 8 Static RAM w ith Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation

Contextual Info: l o g i_ 7 c io 8 /io 9 128K x 8 Static RAM Low Power i c D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

LT3973-3.3

Abstract: 5962-8959821MMA 5962-89598 qml-38535 5962-8959824 5962-8959838MZA EDI88128CS15TB EDI88130LPS100L32B S128K8 S128K8-85MC
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED H Add device type 41. Make corrections to case outline N, dimension b. Add vendor CAGE 65786 as source of supply for device type 41. Update boilerplate. Editorial changes throughout. 97-03-26 Raymond Monnin

Contextual Info: L7C108/109 128K x 8 Static RAM Low Power ;• v .• s [. : j ;i’[ : <a DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum

1419H

Abstract: 1221H
Contextual Info: mm MHMW ''qgpp. L 7C jt jwSmi S -'whmmn* mm DEVICES INCORPORATED 128K x 8 Static RAM Low Power DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns m aximum