ZETB Search Results

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

IRF50

Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
Contextual Info: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ZVN0545

Abstract: ZVN0545A
Contextual Info: ZETEX SEMICONDUCTORS TSD » T17GS7Û 0DGSL.35 Ô • ZETB 95D 0 5 6 3 5 N-channel enhancement­ mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

bcv59

Abstract: N705 bcv-59 ZTX301
Contextual Info: ’ ZETEX SEMICONDUCTORS IbE D • =1170570 000b675 0 ■ ZETB ' SEM IC O N D U C T O R DICE ELECTRICAL C H A RA C TERIST ICS NPN SM A LL SIGNAL TRA N SISTO R S Dice type- BC546A BC546B ZT X304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C

irfz22

Abstract: IRFZ20/FI
Contextual Info: ZETEX SEMICONDUCTORS TSD D ^70370 0005S41 ZETBj T 1 95D 05541 D T*- 7 9 -H N-channel enhancement mode vertical D M O S FET IRFZ20 IRFZ22 ADVANCED INFORMATION FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4

Contextual Info: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc

sem 2106

Abstract: sem 2106 24 pin ZVN2106 SOT 153 2106 sot
Contextual Info: ZETEX S E M I C O N D U C T O R S W D T Î 7 0 5 7 Û Q G D S b k S 0 • ZETB 95D 0 5 6 4 5 T ' 3 ? - <5? N-channel enhancement mode vertical DMOS FET ZVN 2106 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: bGE D • ZETEX SEMICONDUCTORS 4 tlt:J7DS?ô ÜQD?bûS b 3 fi ■ ZETB CENTRE BASE E-LINE 'M V 'P' Channel Small Signal MOSFETs Part Number BV dss Id 'dm V mA A V Min. VcSlth Max. a •o mA ÎÎ a Max. R d S I o ii ) Id mA Pd VP w ZVP0545AM 1 -450 -45 - 0 .4

ZVP2110

Abstract: ZVP2110A ZVP2110B ZVP2110C ZVP2110E ta f220 ZVP211 F219
Contextual Info: bOE J> • cic 7D57fl 0007^51 5b0 M ZETB ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

201 ferranti

Contextual Info: ZETEX S E M I C O N D U C T O R S TSD D ^70570 0005^5 4 • ZETB 950 05695 T - 3 =? - o ? Z V N 2535 N-channel enhancement mode vertical DMOS FET i FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ZVP210

Abstract: zvp2106 IX 1646
Contextual Info: WOSTfl ISD » ZETEX SEM ICONDUCTORS 000S 777 b ZETB 95D 0 5 7 7 7 T'37'JS P-channel enhancement mode vertical D M O S FET ZVP2106 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown • Excellent temperature stability • High input impedance

K 3911

Abstract: n3220
Contextual Info: ' ZETEX SEMICONDUCTORS U U. I *aa •iSD D ^70570 0 0 0 5 7 1 e 3 ■ ZETB 95D 0 5 7 1 9 T-39-11 N-channel enhancement mode vertical DMOS FET ZV N 3220 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

t5d diode

Contextual Info: ^53 ZETEX SEMICONDUCTORS D TÎ7QS7Ô OOOSbl? h • ZETB 95D 0 5 6 1 7 D — T -3 ? -0 °l ZV N 0124 N-channel enhancement­ mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: ZETEX SEMI CONDUCTORS IS D D TìTDSTa 00031^3 D • ZETB 95D 0 5 6 9 3 D T -3 ? -o f ' IVI-channel enhancement mode vertical DMOS FET Z V N 2224 I [ i FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ferranti zvn

Contextual Info: ZETEX S E M I C O N D U C T O R S ci c17DS?0 ^SD D 0QQ5b33 4 • ZETB 95D 0 56 33 T '3 S '2 S N-channel enhancement­ mode vertical D M O S FET ZVN 0540 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

G296

Abstract: ZVP2120
Contextual Info: ZETEX SEMICONDUCTORS ‘Ì S D V ^70570 □ D D S 7 ci3 M • ZETB 95D 0 5 7 9 3 T ' 3 ? ' 2 5 P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: bOE D • ^ 7 0 3 7 0 GDG7TG3 245 Wt ZETB ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP0545 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

BC177

Abstract: ztx107 ztx302 zetex
Contextual Info: 5 bE I 1170576 • 0 0 0 b133 015 H ZETB TABLE 1: NPN GENERAL PURPOSE T - m - G i The devices show n in this table are general purpose transistors designed for small signal amplification from d.c. to radio frequencies. Typical application areas include: A U D IO

IRFZ30

Abstract: IRFZ32
Contextual Info: ZETEX ^5» SEMICONDUCTORS n ? DS7Ö 0005544 5 • ZETB D 95D 0 5 5 4 4 -V '3 1 N-channel enhancement mode vertical DMOS FET * IRFZ30 IRFZ32 ADVANCED INFORMATION FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability

Contextual Info: ZET EX S E M I C O N D U C T O R S ‘iSD D ^70570 D 0 D S 711 *\ • ZETB 95D 05711 N-channel enhancement mode vertical D M O S FET ZV N 321 0 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: SbE m J> cn7D57fl O O D b ' m NPN LOW LEVEL 4Tb • ZETB ~ \^ 2 T \ - £> | ZETEX SEMICONDUCTORS TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRA N SISTO RS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military

ZVP2206L

Contextual Info: ZETEX S E M I C O N D U C T O R S 1S1> D T cî70S7ô ÜOOSflOl T • ZETB 95D 05801 T ' 37-25 ' P-channel enhancement mode vertical D M O S FET ZVP2206 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown • Excellent temperature stability

DEVICE MARKING ZVN

Abstract: BSS138S 2N7001
Contextual Info: ZETEX SEM ICO NDUCTORS IbE D • ^70576 0Q0bflS4 3 ■ ZETB MOSFETS SPECÌFiCATÌONS — —P N-CHANIMEL SM ALL SIGNAL M OSFETS Part number ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN 0124A ZVN0124B ZVN 2120A ZVN2120B BS107P BS107PT