TRANSISTOR 3055 Search Results

3055 transistor

Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Contextual Info: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for

transistor 3055

Abstract: 3055 3055 transistor n3055 3055 npn 10a v150 T 3055 on 3055 A 3055 Q62702-U58
Contextual Info: IMPIM-Transistor fü r leistungsstarke IMF-Endstufen 2 IM 3055 2 N 3 0 5 5 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 D IN 41 8 72 T O - 3 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten

transistor 3055

Abstract: 3055 transistor 2N3055 power transistor 3055 3055 n3055 3055 npn e 3055 t transistor C200 L 3055
Contextual Info: 2 N 3055 NPN Transistor for high-power A F output stages 2 N 3 0 5 5 is a single-diffused N P N silicon transistor in a case 3 A 2 D IN 4 1 8 7 2 T O -3 . The collector is electrically connected to the case. The transistor is particularly designed for use iri high -pow er A F output stages and in stabilized pow er supplies.

Contextual Info: bbS3T31 0030550 T5T H A P X N AUER PHILIPS/DISCRETE Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

BDX 241

Abstract: transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TOP-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

transistor bd 202

Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
Contextual Info: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

BDX 241

Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

3055

Abstract: 3055 npn A 3055 transistor 3055
Contextual Info: 4 S i» 2 N 3055 'V Diffundierter Silizium-NPN-Mesa-Leistungstransistor Diffused Silicon NPN Mesa Power Transistor Anwendungen: Schalter hoher Leistung und NF-Endstufen Applications: High power switching and AF-output stages Besondere M erkm ale: Features:

Contextual Info: ultrasonic sensor diffuse mode sensor T30UDPB • compact housing style ■ cable, 2m ■ Operating voltage 12…24 VDC ■ two pnp transistor outputs ■ two independent switching ranges adjustable via button or control line Wiring diagram T30UDPB 3055550

Contextual Info: ultrasonic sensor diffuse mode sensor T30UIPA • compact housing style ■ cable, 2m ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for current measuring range adjustable via teach-in Wiring diagram T30UIPA 3055974 Design

Contextual Info: ultrasonic sensor diffuse mode sensor T30UIPB • compact housing style ■ cable, 2m ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for current measuring range adjustable via teach-in Wiring diagram T30UIPB 3055980 Design

Contextual Info: ultrasonic sensor diffuse mode sensor T30UUPA • compact housing style ■ cable, 2m ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for voltage measuring range adjustable via teach-in Wiring diagram T30UUPA 3055986 Design

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

3055L2

Abstract: 3055L b3055
Contextual Info: S T P /B 3055L2 S amHop Microelectronics C orp. Nov 23, 2004 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.

3055VL

Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
Contextual Info: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

Contextual Info: TIP2955 TIP3055 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching

transistor Amp 3055L

Abstract: 3055L 3055L transistor marking 3055l amp 3055l motorola an569 thermal MMFT3055EL MOTOROLA TRANSISTOR T2 2N3904 AN569
Contextual Info: MOTOROLA Order this document by MMFT3055EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055EL Motorola Preferred Device SOT–223 for Surface Mount MEDIUM POWER LOGIC LEVEL TMOS FET

2SC3055

Abstract: E3 37497 2sc3055 transistor high power switching transistor
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*

Contextual Info: ultrasonic sensor diffuse mode sensor T30UIPAQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for current measuring range adjustable via teach-in Wiring diagram

Contextual Info: ultrasonic sensor diffuse mode sensor T30UIPBQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for current measuring range adjustable via teach-in Wiring diagram

Contextual Info: ultrasonic sensor diffuse mode sensor T30UDPBQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 12…24 VDC ■ two pnp transistor outputs ■ two independent switching ranges adjustable via button or control line Wiring diagram

Contextual Info: ultrasonic sensor diffuse mode sensor T30UUPBQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for voltage measuring range adjustable via teach-in Wiring diagram

Contextual Info: ultrasonic sensor diffuse mode sensor T30UDPAQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 12…24 VDC ■ two pnp transistor outputs ■ two independent switching ranges adjustable via button or control line Wiring diagram