BD826 Search Results

BD826

Abstract: BD828 BD827 BD830 80826 B0828 BD829 BD825 IEC134
Contextual Info: BD826 BD828 BD830 J V. SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in T0-202 plastic envelopes, recommended for driver stages in hi-fi amplifiers and television circuits. N-P-N complements are BD825, BD827 and BD829. Matched pairs can be supplied.

transistor bd826

Abstract: bd830 BD 829 BD825 BD828
Contextual Info: BD826 BD828 BD830 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in T 0 -2 0 2 plastic packages, recom m ended fo r d rive r stages in h i-fi am p lifie rs and television circuits. N-P-N com plem ents are BD825, BD827 and BD 829. M atched pairs can be supplied.

Contextual Info: BD825 BD827 BD829 _ J V. SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in TO-202 plastic envelopes, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

b0825

Abstract: bd825 BD827 BD829 B0828 BD826 BD828 BD830 IEC134
Contextual Info: BD825 BD827 BD829 y V s . SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in T0-202 plastic envelopes, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

transistor bd826

Abstract: bd828 BD826-10 BD828-10 BD826 MD 202 BD829 BD830-16 BD830 BD830-10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BD826; BD828; BD830 PNP power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 23 Philips Semiconductors Product specification PNP power transistors

BF762

Abstract: TO-202 BF760
Contextual Info: TO-202 Plastic Package Transistors PNP Electrical C haracteristics (Ta=25°C, U n le ss O therw ise Specified) Maxim um Ratings Type No. ^ CBO ^ CEO ' ' ebo (V) Min (V) Min IV) Min BD814 45 45 5 BD816 60 60 BD81B 100 BD826 45 *CBO PD (W) Ta=25 "C (A) (PA)

BD829

Abstract: bd827
Contextual Info: BD825 BD827 BD829 y v . SILICON PLANAR EPITA XIA L PO W ER TR A N SISTO R S General purpose N-P-N transistors, in T0-202 plastic packages, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

bd827

Abstract: BD829 BD825 BD826 transistor bd826 BD828 BD830 IEC134
Contextual Info: BD825 BD827 BD829 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in T0-202 plastic envelopes, recommended for driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

Contextual Info: BD826 BD828 BD830 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in TO-202 plastic envelopes, recommended for driver stages in hi-fi amplifiers and television circuits. N-P-N complements are BD825, BD827 and BD829. Matched pairs can be supplied.

Contextual Info: Datasheet System motor driver for CD/DVD Player 4ch System Motor Driver for Car Audio BD8266EFV-M ●Key Specifications Input voltage range: Operating temperature range ●General Description BD8266EFV-M is BTL driver of 5 inputs and 4 outputs for Car CDs developed for SPINDLE motor CH1 ,

transistor bd826

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD826; BD830 PNP power transistors Product specification Supersedes data of 1997 Jun 23 File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification PNP power transistors

BD828

Abstract: BD828-10 BD826 transistor bd826 BD826-10 BD826-16 BD830-16 bd826 transistor
Contextual Info: Philips Semiconductors Product specification PNP power transistors BD826; BD828; BD830 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose

BD825

Abstract: BD826 BD829 BD830
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD825; BD829 NPN power transistors Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN power transistors

Contextual Info: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2n2222a SOT23

Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes