BD828 Search Results

BD826

Abstract: BD828 BD827 BD830 80826 B0828 BD829 BD825 IEC134
Contextual Info: BD826 BD828 BD830 J V. SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in T0-202 plastic envelopes, recommended for driver stages in hi-fi amplifiers and television circuits. N-P-N complements are BD825, BD827 and BD829. Matched pairs can be supplied.

transistor bd826

Abstract: bd830 BD 829 BD825 BD828
Contextual Info: BD826 BD828 BD830 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in T 0 -2 0 2 plastic packages, recom m ended fo r d rive r stages in h i-fi am p lifie rs and television circuits. N-P-N com plem ents are BD825, BD827 and BD 829. M atched pairs can be supplied.

Contextual Info: BD825 BD827 BD829 _ J V. SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in TO-202 plastic envelopes, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

b0825

Abstract: bd825 BD827 BD829 B0828 BD826 BD828 BD830 IEC134
Contextual Info: BD825 BD827 BD829 y V s . SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in T0-202 plastic envelopes, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS PNP M axim um R atings Typ# No. V CBO V ECO V EBO (V) (V) (V) (MA) Min Min Min Max BD818 100 60 5.0 BDS30 100 80 5.0 'cBO • 0.1 « hpE VCB (V) 30 CSA743A 80 80 80 5.0 5.0 5.0 50 60 60 5.0 BD828 60 60 5.0 30 CSA743 50

b0816

Abstract: BD816 BD814 BD818 BD826 BD828 BD842 BD844 CSA743 CSA743A
Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS PNP M a x im u m R a tin g s Typ» No. VCB0 (V) V ECO V EBO (V) (V) (MA) Min Min Min Max BD818 100 60 5.0 BDS30 100 80 5.0 'cBO 0.1 VCB (V) 30 « hpE CSA743A 80 80 80 5.0 5.0 5.0 50 60 60 5.0 BD828 60 60 5.0 30 CSA743 50

transistor bd826

Abstract: bd828 BD826-10 BD828-10 BD826 MD 202 BD829 BD830-16 BD830 BD830-10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BD826; BD828; BD830 PNP power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 23 Philips Semiconductors Product specification PNP power transistors

BD829

Abstract: bd827
Contextual Info: BD825 BD827 BD829 y v . SILICON PLANAR EPITA XIA L PO W ER TR A N SISTO R S General purpose N-P-N transistors, in T0-202 plastic packages, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

bd827

Abstract: BD829 BD825 BD826 transistor bd826 BD828 BD830 IEC134
Contextual Info: BD825 BD827 BD829 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in T0-202 plastic envelopes, recommended for driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

b0816

Abstract: BD814 b0814 BD818 BD840 BD816 BD826 BD828 BD842 BD844
Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS PNP M a x im u m R a tin g s Type No. VCB0 (V) V ECO V EBO (V) (V) (MA) Min Min Min Max BD818 100 60 5.0 BDS30 100 80 5.0 'cBO 0.1 VCB (V) 30 « hpE CSA743A 80 80 80 5.0 5.0 5.0 50 60 60 5.0 BD828 60 60 5.0 30 CSA743 50

Contextual Info: BD826 BD828 BD830 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in TO-202 plastic envelopes, recommended for driver stages in hi-fi amplifiers and television circuits. N-P-N complements are BD825, BD827 and BD829. Matched pairs can be supplied.

BD828

Abstract: BD828-10 BD826 transistor bd826 BD826-10 BD826-16 BD830-16 bd826 transistor
Contextual Info: Philips Semiconductors Product specification PNP power transistors BD826; BD828; BD830 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose

Contextual Info: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.