BD830 Search Results

BD826

Abstract: BD828 BD827 BD830 80826 B0828 BD829 BD825 IEC134
Contextual Info: BD826 BD828 BD830 J V. SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in T0-202 plastic envelopes, recommended for driver stages in hi-fi amplifiers and television circuits. N-P-N complements are BD825, BD827 and BD829. Matched pairs can be supplied.

Contextual Info: Single-chip Type with Built-in FET Switching Regulators High-efficiency Step-up/down Switching Regulator with Built-in Power MOSFET BD8306MUV No.11027EAT60 ●Description ROHM’s highly-efficient buck-boost converter BD8306MUV produces step-up/down output voltage including 3.3 V from

transistor bd826

Abstract: bd830 BD 829 BD825 BD828
Contextual Info: BD826 BD828 BD830 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in T 0 -2 0 2 plastic packages, recom m ended fo r d rive r stages in h i-fi am p lifie rs and television circuits. N-P-N com plem ents are BD825, BD827 and BD 829. M atched pairs can be supplied.

Contextual Info: Single-chip Type with Built-in FET Switching Regulators High-efficiency Step-up/down Switching Regulator with Built-in Power MOSFET BD8306MUV No.11027EAT60 ●Description ROHM’s highly-efficient buck-boost converter BD8306MUV produces step-up/down output voltage including 3.3 V from

Contextual Info: BD825 BD827 BD829 _ J V. SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in TO-202 plastic envelopes, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

b0825

Abstract: bd825 BD827 BD829 B0828 BD826 BD828 BD830 IEC134
Contextual Info: BD825 BD827 BD829 y V s . SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in T0-202 plastic envelopes, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

Contextual Info: Single-chip Type with Built-in FET Switching Regulators High-efficiency Step-up/down Switching Regulator with Built-in Power MOSFET BD8306MUV No.11027EAT60 ●Description ROHM’s highly-efficient buck-boost converter BD8306MUV produces step-up/down output voltage including 3.3 V from

Contextual Info: Single-chip Type with Built-in FET Switching Regulator Series High-efficiency Step-up/down Switching Regulator with Built-in Power MOSFET BD8301MUV No.09027ECT07 ●General Description ROHM’s highly-efficient step-up/down switching regulator BD8301MUV produces step-up/down output including 3.3 V from

Contextual Info: Large Current External FET Controller Type Switching Regulators Step-up/down, High-efficiency Switching Regulators Controller type No.13028EBT02 BD8303MUV ● General Description ROHM’s highly-efficient step-up/down switching regulator BD8303MUV generates step-up/down output including 3.3 V / 5 V

transistor bd826

Abstract: bd828 BD826-10 BD828-10 BD826 MD 202 BD829 BD830-16 BD830 BD830-10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BD826; BD828; BD830 PNP power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 23 Philips Semiconductors Product specification PNP power transistors

bd8303

Abstract: 10000P RSS065N03
Contextual Info: Large Current External FET Controller Type Switching Regulators Step-up/down, High-efficiency Switching Regulators Controller type No.09028EAT02 BD8303MUV ● General Description ROHM’s highly-efficient step-up/down switching regulator BD8303MUV generates step-up/down output including 3.3 V / 5 V

BD829

Abstract: bd827
Contextual Info: BD825 BD827 BD829 y v . SILICON PLANAR EPITA XIA L PO W ER TR A N SISTO R S General purpose N-P-N transistors, in T0-202 plastic packages, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

Contextual Info: Single-chip Type with Built-in FET Switching Regulators High-efficiency Step-up/down Switching Regulator with Built-in Power MOSFET BD8306MUV No.11027EAT60 ●Description ROHM’s highly-efficient buck-boost converter BD8306MUV produces step-up/down output voltage including 3.3 V from

DE3518C

Contextual Info: BD8306MUV Single-chip Type with Built-in FET Switching Regulators High-efficiency Step-up/down Switching Regulator with Built-in Power MOSFET BD8306MUV No.11027EAT60 ●Description ROHM’s highly-efficient buck-boost converter BD8306MUV produces step-up/down output voltage including 3.3 V from

DE3518C

Abstract: VQFN020V4040
Contextual Info: Single-chip Type with Built-in FET Switching Regulator Series High-efficiency Step-up/down Switching Regulator with Built-in Power MOSFET BD8301MUV No.09027ECT07 ●General Description ROHM’s highly-efficient step-up/down switching regulator BD8301MUV produces step-up/down output including 3.3 V from

LQH32PN4R7N

Abstract: LQH32PN 150 amp H-bridge Mosfet GRM21BB30J226 GRM21BB GRM31CB DE3518 DE3518C VQFN020V4040 sepic
Contextual Info: Single-chip Type with Built-in FET Switching Regulator Series High-efficiency Step-up/down Switching Regulators with Built-in Power MOSFET BD8305MUV No.10027EDT08 ●Description ROHM’s highly-efficient step-up/down switching regulator BD8305MUV produces step-up/down output including 3.3 V from

Contextual Info: Large Current External FET Controller Type Switching Regulators Step-up/down, High-efficiency Switching Regulators Controller type No.13028EBT02 BD8303MUV ● General Description ROHM’s highly-efficient step-up/down switching regulator BD8303MUV generates step-up/down output including 3.3 V / 5 V

Contextual Info: Single-chip Type with Built-in FET Switching Regulator Series High-efficiency Step-up/down Switching Regulators with Built-in Power MOSFET BD8305MUV No.09027EBT08 ● General Description ROHM’s highly-efficient step-up/down switching regulator BD8305MUV produces step-up/down output including 3.3 V from

Contextual Info: BD826 BD828 BD830 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in TO-202 plastic envelopes, recommended for driver stages in hi-fi amplifiers and television circuits. N-P-N complements are BD825, BD827 and BD829. Matched pairs can be supplied.

ic str 6707

Abstract: BD829 BD830 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD830 PNP power transistor Product specification Supersedes data of 1998 May 29 1999 Apr 21 Philips Semiconductors Product specification PNP power transistor BD830 FEATURES PINNING • High current max. 1 A

BD8301MUV

Contextual Info: Single-chip Type with Built-in FET Switching Regulator Series High-efficiency Step-up/down Switching Regulators with Built-in Power MOSFET No. 09027EBT07 BD8301MUV ● General Description ROHM’s highly-efficient step-up/down switching regulator BD8301MUV produces step-up/down output including 3.3 V from

transistor bd826

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD826; BD830 PNP power transistors Product specification Supersedes data of 1997 Jun 23 File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification PNP power transistors

str 6707

Abstract: transistor ai 757
Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET BD830 PNP power transistor 1999 Apr 21 Product specification Supersedes data of 1998 May 29 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP power transistor BD830 FEATURES PINNING • High current max. 1 A

BD828

Abstract: BD828-10 BD826 transistor bd826 BD826-10 BD826-16 BD830-16 bd826 transistor
Contextual Info: Philips Semiconductors Product specification PNP power transistors BD826; BD828; BD830 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose