TRANSISTOR 1KT Search Results

Contextual Info: KST4123 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

transistor 1kt

Contextual Info: 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR » Collector-Emitter Voltage: V c e o = 1 6 0 V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Sym bol Collector-Base Voltage Collector-Em itter Voltage

Contextual Info: MPSA64 SEMICONDUCTOR FORWARD INTERKAHONAL ELECTRONICS LID . DARLINGTON _ TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR TRANSISTORS * High Collector-Emitter Voltage Vces=-30V * Collector D issipation; Pc=625mW Ta=25 “C ABSOLUTE MAXIMUM RATINGS at Tanfc=25'C

rds035

Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
Contextual Info: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW

Contextual Info: M O S M m w t i ï M O S Field E ffect P o w e r Transistor 2SK1492 N M O S F E T lif f l 2SK1492 i±, N MOS F E T T ':* <, X >f 'y -f > DC n & r>, W ¡5J l i È X 4 .y f -> Ì i mm DC- ^ Î C i jl i l î 'C 't o 0 3 .0 ± 0 . 2 ° ^dss = 250 V, I D DC) = ± 35 A

ICL8010

Abstract: icl8010ac transistor a018 RTL 8019 DAC with BCD inputs ICL8020AMXJD ICL8018ACPD ICL8020 ICL8008 HyComp
Contextual Info: D /A Conversion G ENERAL DESCRIPTIO N FEATURES • TTL Compatible: LOW— 0.8V HIGH— 2.0V • 12 Bit Accuracy • 40 nsec, Switching Speed • Wide Power Supply Range • Low Temperature Coefficient D/A-A/D Converters Digital Threshold Control Programmable Voltage Source

transistor j3003

Abstract: svi 1302 9316V ESB 24-40
Contextual Info: Contents Features. Applications. Block Diagram. Selection Guide.

marking code 1gt

Abstract: transistor marking 1Dt transistor 1kt 1Ft SOT323 1Gt transistor BC847CW pin 1Ft TRANSISTOR 1GT MARKING 1Gt 27 marking code
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors FEATURES BC846W; BC847W; BC848W PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.

transistor 1BT

Abstract: 1Ft SOT323 1Ft TRANSISTOR transistor 1Ht BC847CW1GT transistor 1kt BC846W 1Bt 65 1kt marking code npn 1bt
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

CAPACITOR 365pf

Abstract: Theta-J solid state relay 100 theta-j solid LM111 LM329 LT1011 LT1011CN8 LT1011CS8 T0194 TUF* MARKING
Contextual Info: u im TECHNOLOGY SPECIFICATION NOTICE LT1011CS8 J a n u a r y 1994 The specifications and pinout for the L T 1 0 1 1 C S 8 are identical to those of the L T 1 0 1 1 C N 8 . The mechanical drawing for the 8-pin S O IC package can be found on page 1 4 -1 6 of the 1992

transistor 1BT

Abstract: transistor 1Ht 1Ft SOT323 1kt marking code BC846BW transistor 1BT 88 marking code 1gt TRANSISTOR 1gt BC846W BC847W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification

HA1-2541-2

Abstract: transistor k 2541 ai 2541-5 transistor ha1 AN-550 HA1-2541
Contextual Info: HA-2541 ÎÜ HARRIS U S E M I C O N D U C T O R 40MHz, Fast Settling, Unity Gain Stable, Operational Amplifier November 1996 Features Description • U nity Gain B a n d w id th .40MHz • H igh S lew R a te . 250V/ns

TRANSISTOR B509

Contextual Info: r r u n w LT1016 i TECHNOLOGY Ultra Fast Precision C om parator F€ATUR€S D C S C R IP T IO n • ■ ■ ■ ■ ■ ■ The LT1016 is an ultra fast 10ns comparator specifi­ cally designed to interface directly to TTL logic while operating off either a dual ± 5V supply or a single + 5V

transistor k 4213

Abstract: 400P Crystal transistor k 4213 m k 4213 CFL dimmer trailing LC866008A LC866012A LC866016A LC866020A TRANSISTOR P72
Contextual Info: Ordering n u m b e r:EN 4213 _ CMOS LSI LC866020A/16A/12A/08A No.4213 SAMYD, 8-Bit Single Chip Microcomputer LC866020A On-chip 20K Bytes ROM and On-chip 384 Bytes 8-B it Single Chip M icrocomputer LC866016A On-chip 16K Bytes ROM and On-chip 384 Bytes 8-B it Single Chip M icrocomputer

application circuits of ic 74121

Abstract: pulse generating circuit IC 74121 jtw 07 DIODE 74121 application as pulse generator 74121 full internal circuit diagram IC TTL 7402 LT1016CP LS 74121 LT319AH GAH 3
Contextual Info: D 5 $7 7 ò LT1016 ULTRA-FAST PRECISION COMPARATOR F€flTUft€S D€SCftlPTIOfl • ■ ■ ■ ■ ■ ■ The LT1016 is an ultra fast 10ns comparator specifi­ cally designed to interface directly to TTL logic while operating off either a dual ± 5V supply or a single + 5V

Contextual Info: T O SH IB A MG8Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 92.7±0-6 • 5±0.p The Electrodes are Isolated From Case. 7± 0 | 8 , 14±0.3 • 6 IGBTs are Built Into 1 Package.

LA 7687 a

Contextual Info: GEC PLESSEY [ s e m i c o n d u c t o r s ! SP8861 1.3 GHz LOW POWER SINGLE-CHIP FREQUENCY SYNTHESISER Supersedes September 1990 Edition The SP8861 is a low power single chip synthesiser intended for professional radio applications, and contains all the elements (apart from the loop amplifier) to fabricate a

transistor C 6092

Abstract: transistor tt 6093
Contextual Info: ISOCOfl C O M P O N E N T S LTD .V ?SC D • 4flflt,S10 □DOOiat, a i l ■ ISO T = -^ //-8 ^ SFH609-1, SFH609-2, SFH609-3 OPTICALLY COUPLED ISOLATORS ISOCOM, INC. 274 E HAMILTON AVE SUITE F CAMPBELL, CA. 95008 PACKAGE DIMENSIONS IN INCHES MM m r T m r

HA5004

Abstract: HA-5004 IBP303E-6 FZ08
Contextual Info: Harris Semiconductor M M 5004 H a rris A n alo g November 1991 H A -5 0 0 4 SPICE CURRENT FEEDBACK AMPLIFIER M A CR O -M O D EL A u th o rs: Steve J o s t and V erlin H ibner Intro du ctio n This paper describes the SPICE macro-m odel for the H A-5004 current feedback am plifier. The model was

Contextual Info: B U R R -B R O W N [ OPA26Q4 1 Dual FET-lnput, Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • LOW DISTORTION: 0.0003% at 1kHz LOW NOISE: 10nVWRz HIGH SLEW RATE: 25V/|IS WIDE GAIN-BANDWIDTH: 20MHz

SAMSUNG NAND Flash Qualification Report

Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0
Contextual Info: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die ] September, 2003 Rev. 01 Memory Quality Assurance The information contained in this document is proprietary to Samsung Electronics Co., Ltd. and shall be protected from any reproduction in part or as a whole without Samsung`s written approval.

Triac TAG 9022

Abstract: Transistor TEO 1279 DIL Reed relay RS -349-399 AKO 544 271 tda 7977 Triac TAG 9031 RS 434-396 TV SHARP IC TDA 9381 PS hall marking code A04 px625
Contextual Info: Issued November 1986 7376 r Contents list and semiconductor device type index data Data library contents Issue Date Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system 'Minimaster 3' 2+10 telephone switching system