TRANSISTOR 1308 Search Results
TRANSISTOR 1308 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 54F573FM/B | Rochester Electronics LLC | 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, |
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TRANSISTOR 1308 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
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2sb504kpl 30092sb502bly34+6 | |
IE-02Contextual Info: Philips Semiconductors Product specification PowerMOS transistor PHD3N20L Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface |
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phd3n20lie-02 | |
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
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2cy172cy182cy192cy20+12 | |
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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sx3704ap239transistor 801398c547+6 | |
ds7830j
Abstract: DS7830 J14A DUAL Differential Line DRIVER
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ds7830ds7830jj14adual differential line driver | |
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Contextual Info: DS7830/DS8830 tß National Semiconductor DS7830/DS8830 Dual Differential Line Driver General Description Features The QS7830/DS8830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function. TTL Transistor-Transistor-Logic multiple emitter inputs al |
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ds7830/ds8830tl/f/5799-7tl/f/5799-1 | |
DS7830J
Abstract: C1996 DS7830 DS7830W DS8830 DS8830N J14A N14A DS8730 DS7830J-883
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ds7830ds8830ds7830jc1996+6 | |
transistor jp
Abstract: 2SD1308 2SB974 2T54 h13k
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2sd13082sb974tc-25transistor jp+2 | |
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Contextual Info: B 61 9-9 7 1308, J309 N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATOR • VHF/UHF AMPLIFIERS Absolute maximum ratings at Ta = 25‘ C Reverse Gate Source & Reverse Gate Drain Voltage 360 mW 3 .2 7 m W /°C Power Derating |
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t0-226aa462fc | |
HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
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hmxr-500113001 yf 09 transistorhp 5082 70005082-0825+6 | |
SPRAGUE 30DContextual Info: TypeTE VISHAY Vishay Sprague Aluminum Capacitors L ittl -lytic Electrolytics FEATURES • Proven dependable performance in industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of |
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505f100cte1411405f100c106f100d+7 | |
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6 | |
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
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cb-f36c2sd16422sd21822sc4489+11 | |
d2396
Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
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2sk2503rk7002tc363tsdtc314ts+14 | |
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Contextual Info: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter |
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fjc1308fjc1963ot-89 | |
Transistor 1308
Abstract: FJC1308 FJC1963
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fjc1308fjc1963ot-89transistor 1308 | |
E 94733
Abstract: AH-1 SOT23
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bft92q62702-f1050ot-23900mhz+2 | |
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Contextual Info: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures |
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bb53c002s3bbbft25a | |
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Contextual Info: 2SB1308 2SD1963 Transistors Power Transistor —50V> —3A 2SB1308 •Features •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Low V ce(m i). (M ax. —0.45Vm ax. a t Ic/I b = - 1 . 5 A / —0.15A) 2 ) Excellent DC curre nt gain characteristics. 3 ) C om plem ents the 2S D 1963. |
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2sb13082sd19630dlb713o-220fn+3 | |
mje 3003
Abstract: mje 1303 transistor Bf 444 369-42 BFT25A 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291
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bb53ci31dde53bbbft25amje 3003+8 | |
BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
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bf195 equivalentbf1972n3680bf173+6 | |
ladungspumpe
Abstract: spannungsregelung drossel 13041 TRANSISTOR schaltregler Spannungsregler
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ladungspumpespannungsregelungdrossel13041 transistor+2 | |
MSK5810RH
Abstract: MSK5800RH
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rh1573msk5800rh5810rh5820rh+7 | |
MSK5910RHContextual Info: M.S. KENNEDY CORPORATION 4707 DEY ROAD LIVERPOOL, NY 13088 PHONE: 315 701-6751 | FAX: (315) 701-6752 MSK Web Site: http://www.mskennedy.com/ Startup Voltage Tracking With MSK5910RH and 5922RH Low Dropout Radiation Hardened Regulators By Paul Musil, MS Kennedy Corp.; 10/2007 |
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msk5910rh5922rhmsk5922rh | |