2N4 Search Results

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

4328T

Contextual Info: TYPES 2N4223, 2N4224 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN NO. O LS 7311350, JU LY 1 9 7 0 -R E V IS E D M A R C H 1973 FOR V H F AM PLIFIER AND MIXER APPLICATIONS • Low Crgs . . . 2 pF Max • High lYfsl/C jss Ratio High-Frequency Figure-of-Merit

2N5067

Abstract: tl 5069
Contextual Info: T Y P E S 2 N 5 0 6 7 , 2N5068. 2N5069 N-P-N S IN G L E -D IF F U S E D SILICON PO W ER T R A N S IS T O R S TYPES 2N5067, 2N5068, 2N 5069 BULLETIN NO. DL-S 7211663, JANUARY FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4901 THRU 2N4903

2N4403

Contextual Info: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

2N5001

Abstract: TCA 875 MW-82 2N5149 2N4999
Contextual Info: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

2N404

Abstract: MPS404 2n404a a5t404
Contextual Info: TYPES A5T404, A5T404A, A8T404, A8T404A P-N-P SILICON TRANSISTORS _B U L L E T I N N O . O L -S 7 3 1 1 9 7 9 , M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-COST REPLACEMENT OF GERMANIUM 2N404, 2N404A • A5T404, A5T404A Have Standard TO-18 100-mil Pin-Circle Configuration

2N4913

Abstract: 2N4915 2N4914 2N4906
Contextual Info: TYPES 2N4913, 2N4914, 2N4915 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS P nj FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4904 THRU 2N4906 • 87.5 W at 2S°C Case Temperature • 5 A Rated Collector Current

2N4001 diode

Abstract: diode 2n4001 2n4001 diode 2N4000 2N4000 Transistor 2N4001 2n4001 TRANSISTOR EM 5135 diode
Contextual Info: TYPES 2N4000, 2N4001 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS o f TM • 15 W at 100°C Case Temperature £| • Max VcE iai of 0.3 V at 0.5 • Max ton of 300 nsat 0.5 A lc • Min f T of 40 MHz Alc g |

2N4996

Abstract: 2n4997 S69-1
Contextual Info: TYPES 2N4996. 2N4997 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 691 1249, A U G U S T 1969 H IG H -F R E Q U E N C Y S IL E C T t T R A N S IS T O R S ! FOR T U N E R A N D IF -A M P L IF IE R S T A G E S IN FM A N D A M /FM S T E R E O -M U L T IP L E X R E C E IV E R S

2N4403

Abstract: cd200
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2N4403 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES : . Low Leakage Current ; I c E V = - 1 0 0 n A ( M a x •)> l B E V = 1 0 0 nA ( M a x . ) @ VCE=-35V, V b e =0.4V

Contextual Info: m 4 5 E J> TCHTSiQ TO S H IB A TR A N S IS TO R GGlTTbS b T0S4 2N4402 SILICO N PN P E P IT A X IA L T Y P E PCT PR O C ESS TOSH IB A (DISCRETE/OPTO) Unit in mm FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER SI MAX, APPLICATIONS. FEATURES: ► Low Leakage Current

2N4403

Contextual Info: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mouser Electronics Related Product Links 610-2N4403 - Central Semiconductor 2N4403

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. 2N4037 TO-39 Metal Can Package MEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N4403 noise figure

Contextual Info: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range

2N4854

Abstract: 2N4854U ADC-03 2n4854 to-78
Contextual Info: TECHNICAL DATA 2N4854 JTX, JTXV 2N4854U JTX, JTXV MIL-PRF QPL Processed per MIL-PRF-19500/421 DEVICES NPN/PNP SILICON COMPLEMENTARY SMALL-SIGNAL DUAL TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

2N4856

Contextual Info: T em ic 2N4856 JAN/JANTX/JANTXV Series siliconix N-Channel JFETs 2N4856JAN 2N4857JAN 2N4858JAN 2N4859JAN 2N4860JAN 2N4861JAN 2N4856JANTX 2N4857JANTX 2N4858JANTX 2N4859JANTX 2N4860JANTX 2N4861JANTX 2N4856JANTXV 2N4857JANTXV 2N4858JANTXV 2N4859JANTXV 2N4860JANTXV

PN4092

Abstract: IC SST4091 pn4092* equivalent SS 200 700 PN4093
Contextual Info: SILICONIX INC lflE » • PN4091 SERIES C T" S ilic o n ix J.Æ Ô55M735 G013T5G 3 incorporated T -3 S -2 S N-Channel JF E T The PN4091 Series Is the plastic equivalent of our popular 2N4091 Series. These devices are especially well suited for analog switching

2N4338

Abstract: 2N4340 equivalent
Contextual Info: ITSiicanix Jm B in c o r p o r a te d The 2N4338 Series of n-channel JFETs is designed for sensitive amplifier stages at low to mid frequencies. It features low cut-off voltages to accommodate low-level power supplies and low leakage for improved system accuracy. The 2N4338 and 2N4339 are ideal for low

2N4857A equivalent

Abstract: 2N4858A 4856a
Contextual Info: 2N4856A/4857A/4858A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number »GSfofO 2N4856A - 4 to -1 0 -AO 50 25 5 4 2N4857A -2 to -6 -4 0 20 40 5 4 2N4858A -0 .8 to —4 -4 0 8 60 5 4 V BR GSS *d ss Min Min (V) (mA) r DS<on^M a x *D(off) tvp (PA) *ON Typ

Contextual Info: NPA N-Channel JFETs C X 'S ilico n ix in c o rp o r a te d TYPE PACKAGE Single TO-92 TO-226AA • J201, J202 Single SOT-23 • SST201, SST202 Single TO-18 • 2N4338, 2N4339, 2N4340, 2N4341, VCR4N Single Chip • Available as NPA1CHP, NPA2CHR NPA3CHP, NPA4CHP

2n4416

Abstract: Siliconix N-Channel JFETs marking code vishay SILICONIX to-72 2N4416 Siliconix SST4416
Contextual Info: 2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number V G S o ff (V) V (B R )G S S Min (V) gfs Min (mS) loss (mA) -3 0 4.5 -2 .5 to - 6 -3 5 4.5 5 -< 6 -3 0 4.5 5 2N4416 -< 6 2N4416A SST4416 5 FEATURES BENEFITS APPLICATIONS

2N4416

Abstract: SST4416
Contextual Info: Tem ic 2N4416/2N4416A/SST4416 Semiconductors N-Channel JFETs Product Summary P art Number V GS<off V) V (B R )G S S M i n ( V ) 2N 4416 -< 6 -3 0 2N 4416A - 2 .5 t o - 6 SST4416 -£ 6 g ft M in (mS) lo ss (mA) 4 .5 5 -3 5 4 .5 5 -3 0 4 .5 5 Features Benefits

SST4393

Abstract: SILICONIX 2N4391
Contextual Info: SST4391 SERIES N-Channel JFETs C f S ilic o n ix in c o rp o ra te d The SST4391 Series is the surface mount equivalent of our popular 2N4391 device types. Its low cost and low rDS on rnake it a good choice for an all-purpose analog switch, while its high g^ and good high-frequency

pn4393

Abstract: PN4391 equivalent PN4392 equivalent
Contextual Info: PN4391 SERIES N-Channel JFETs The PN4391 Series is the plastic equivalent of our popular 2N4391 Series. These devices are especially well suited for analog switching applications but function efficiently as high-gain amplifiers, particularly at high-frequency. Our low-cost TO-92 packaging