2SA179 Search Results

2sa1793

Abstract: 2sc4657
Contextual Info: 2SA1793 SILICON PNP EPITAXIAL TYPE Unit in mm HIGH CURRENT SW ITCHING APPLICATIONS. • • • • Excellent hpE Linearity : hpE 120~400 at V c e = —IV, l£ = —1A Low Collector Saturation Voltage : v CE sat = -0.4V(M ax.) at I c = -3 A , Ib = -0.15A High Power Dissipation : PQ = 1.3W(Ta = 25°C)

2SA1792

Contextual Info: 2SA1792 SILICON PNP EPITAXIAL TYPE U nit in mm STOROBE FLASH APPLICATIONS. M E D IU M PO W ER AM PLIFIER APPLICATIONS. • • • 7.2MAX 3.0 £3: Excellent hjrE Linearity : hpE = 100~320 Vç e = —2V, I q = - 1A Low Saturation Voltage : V çE(sat)= —0.5V (Max.) at I q = —8A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high-frequency amplification Complementary to 2SC4656J 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)

2SA1796

Contextual Info: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1796 Case : E-pack TE7T4 Unit : mm -7A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: 2SA1797 / 2SB1443 Transistors Power Transistor −50V, −3A 2SA1797 / 2SB1443 zFeatures 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / −50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672.

Contextual Info: 2SC4672 Transistors Low Frequency Transistor 50V, 3A 2SC4672 zFeatures 1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. zAbsolute maximum ratings (Ta=25°C)

2SA179

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1791G ue pl d in an c se ed lud pl vi an m m es si

2sc4672 marking

Abstract: 2SC4672 MARKING CODE dk 2SA1797 T100 transistor dk 50
Contextual Info: 2SC4672 Transistors Low Frequency Transistor 50V, 2A 2SC4672 zFeatures 1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. zAbsolute maximum ratings (Ta=25°C)

2SA1790J

Abstract: 2SC4626J SC-89
Contextual Info: Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5˚ Parameter Symbol Rating Unit VCBO −30 V Collector-emitter voltage (Base open)

2SA1790

Abstract: 2SC4626 SC-75
Contextual Info: Transistors 2SC4626 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 1˚ • Features Symbol Rating Unit VCBO 30 V Collector-emitter voltage Base open VCEO 20 V Emitter-base voltage (Collector open)

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

Contextual Info: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40

Contextual Info: h 7 > V 7. $ / T ransistors 2SA1797 2SA1797 Epitaxial Planer PNP Silicon Transistor f ô ^ J S ^ * iilliffl/L o w Freq. Power Amp. • « il > i0 /D im e n s io n s Unit : mm) 1) VcE (sat) V c e (sat)=—0.35V (Max.) ( lc / lB = - 1 A / - 5 0 m A ) 2) I.6 + 0. I

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

transistor DK ql

Abstract: TRANSISTOR to92 MARKING CODE DK MARKING HRA
Contextual Info: 2SA1797 / 2SB1443 2SC4672 Transistors P o w er T ra n s is to r — 50V , — 2A 2SA1797 / 2SB1443 I •A b s o lu te maximum ratings (Ta=25t2 ) •F e a tu res 1 ) L o w VcE(sat). (M a x .— 0 .3 5 V a l Ic/ I b= — 1 V /— 5 0 m A ) Parameter Col lector-base voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PRELIMINARY PNP SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * Low saturation voltage. VCE(SAT)=-0.35V(Max) at IC / IB=-1A / -50mA * Excellent DC current gain characteristics *Pb-free plating product number:2SA1797L

2SA1794

Abstract: 2SC4658
Contextual Info: 2SA1794 SILICON PNP EPITAXIAL TYPE HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. • • c.75 -5 -8 -1 1.3 15 150 -5 5 -1 5 0 +{ .25i fi UNIT V V V A A W °C °C 2 .3 ± 0 2 + 0.2 5 0.65-0 15 RATING -1 0 0 -8 0 -7 U 1 MAXIMUM RATINGS Ta = 2 5°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791G • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob

Contextual Info: Transistors 2SC4626 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 Rating Unit VCBO 30 V Collector-emitter voltage Base open VCEO 20 V Emitter-base voltage (Collector open)

2SA1791J

Abstract: 2SC4656J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 5˚ Symbol Rating

2SA1797

Contextual Info: 2SA1797 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 High transition frequency High power dissipation 1 2 3 A PACKAGE DIMENSIONS E B C D 1 F G 2 H K 3 J

Contextual Info: Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO −30 V Collector-emitter voltage (Base open)

D1F40

Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Contextual Info: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A