MOSFET 600V 30A Search Results

b14nk60z

Abstract: P14NK60ZFP p14nk60 P14NK60Z B14NK60 W14NK60Z STP14NK60Z STP14NK60ZFP STW14NK60Z STB14NK60Z
Contextual Info: STP14NK60Z - STP14NK60ZFP STB14NK60Z/-1 - STW14NK60Z N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STP14NK60Z 600V <0.5Ω 13.5A 160W 3 1 STP14NK60ZFP 600V <0.5Ω

Contextual Info: STP14NK60Z - STP14NK60ZFP STB14NK60Z/-1 - STW14NK60Z N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STP14NK60Z 600V <0.5Ω 13.5A 160W 1 STP14NK60ZFP 600V <0.5Ω

STW30NM60D

Abstract: JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312
Contextual Info: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge

W30NM60

Abstract: ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312
Contextual Info: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge

Contextual Info: R6030ENX Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

STW30NM60D

Abstract: 15a diode W30NM60 ZVS phase-shift converters W30NM60D
Contextual Info: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE STW30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600V < 0.145Ω 30A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

Contextual Info: R6030ENZ Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6030ENX Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.

Contextual Info: R6030ENZ1 Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6030ENZ1 Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6030ENZ Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

mosfet 600V 30A

Abstract: IRFPS30N60K IRFPS37N50A
Contextual Info: PD- 94417A IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement

mJ 6920

Abstract: mosfet 600V 30A IRFPS30N60K IRFPS37N50A
Contextual Info: PD- 94417A IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement

Contextual Info: PD- 94417A IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement

12v 30a smps

Abstract: mJ 6920 IRFPS37N50A avalanche diode 30A
Contextual Info: PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple

Contextual Info: PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple

mosfet 600V 30A

Abstract: IRFPS37N50A power mosfet 600v mJ 6920 247t
Contextual Info: PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple

mosfet 4430

Abstract: 4430 MOSFET 600v 60a STY60NM60
Contextual Info: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM60 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 600V < 0.06Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

Contextual Info: AOD1N60/AOU1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOD2N60

Abstract: AOU2N60
Contextual Info: AOD2N60/AOU2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOD2N60 & AOU2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOD3N60

Abstract: AOU3N60
Contextual Info: AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOU2N60

Abstract: AOD2N60
Contextual Info: AOD2N60/AOU2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOD2N60 & AOU2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

aou3n60

Abstract: AOD3N60
Contextual Info: AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOD2N60A/AOI2N60A 600V,2A N-Channel MOSFET General Description Product Summary The AOD2N60A & AOI2N60A have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.