TO264 Search Results

TFH85P330RJE

Abstract: 10R2 400M TFH85P15R0JE
Contextual Info: TFH Series 85 Watt TO264 Package Thick Film Power 0.79" 20.07mm P style (standard) 0.20" (5.08mm) M style (optional) 0.25" (6.35mm) 1.03" (26.16mm) FEATURES SPECIFICATIONS • 85 Watt power rating at 25°C case temperature • Non-inductive performance • Low thermal resistance

AN569

Abstract: NTY100N10 NTY100N10G V15020
Contextual Info: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V Typ • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode

ON semiconductor 340g

Contextual Info: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • 123 A, 100 V 9 mW @ VGS = 10 V TYP Fast Recovery Diode

AN569

Abstract: NTY100N10 ON semiconductor 340g
Contextual Info: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package http://onsemi.com Features • Source-to-Drain Diode Recovery Time Comparable to a Discrete 123 A, 100 V 9 mW @ VGS = 10 V TYP Fast Recovery Diode • Avalanche Energy Specified

Contextual Info: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V TYP • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified

Contextual Info: MA03D Series Universal input voltage Isolated & Regulated single output AC-DC Converter PRODUCT FEATURES Compact, light Weight Universal input voltage via same terminals Wide input voltage range : 85 to264VAC(120 to370VDC) Efficiency up to 73% o o Operating temperature :-20 C to+85 C

Contextual Info: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V Typ • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode

SIL-PAD 1000 TO 247

Abstract: Tgon 800 SIL-PAD to-264 C1260-40 C126 C264-058 SIL-PAD density TO220 land pattern "Tgon 800" TO220 SMALL heatsink
Contextual Info: HEATSINK C Series TO-126, TO-247, TO-220 and TO-264 Package Heatsinks Ohmite introduces the C series Pat. Pending . This series offers high performance, low cost and a compact heat sink with an integrated camming clip system for TO-126, TO-220, TO-247 and TO-264

MA1012

Abstract: MA-302-55E 6063T5 Tgon 800 MV301 SIL-PAD density a366
Contextual Info: HEATSINK Heatsink with clips for TO-264 and TO-247 F e at u r e s Ohmite introduces the M series, patented Pat. No. 7,151,669 , high performance, low cost, configurable, scalable and compact heat sink with matrix clip system for TO-247 and TO-264 packages. This powerful heat sink provides the easiest assembly, largest

34N80

Abstract: IXFN34N80 ixfx34n80
Contextual Info: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

50n60b

Abstract: 50n60 50N6 IXGH50N60B
Contextual Info: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

73N30

Abstract: "SOT-227 B" dimensions SOT-227 Package ixfk73n30
Contextual Info: HiPerFETTM Power MOSFETs V DSS IXFK 73 N 30 IXFN 73 N 30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK

A1270

Abstract: 55C160 APT84M50B2 APT84M50L MIC4452
Contextual Info: APT84M50B2 APT84M50L 500V, 84A, 0.065Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Super-247 Package

Abstract: extrusion mounted clip 20N-40N igbt clip Kool pad igbt clip rail
Contextual Info: Application Note AN-997 Mounting Guidelines for the Super-247 By Andrew Sawle and Arthur Woodworth Table of Contents Page Introduction .1 A Breakdown of System Thermal Resistance .1

weight TO-264

Contextual Info: Advance Technical Information IXTK 250N10 High Current MegaMOSTMFET VDSS ID25 = 100 V = 250 A Ω = 5 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 100

60N25

Abstract: D2560 UPS SIEMENS
Contextual Info: Advance Technical Information IXTH 60N25 Standard Power MOSFET VDSS = 250 V ID cont = 60 A Ω RDS(on) = 46 mΩ N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250

IXTK80N25

Abstract: 80N25 megamos
Contextual Info: IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS

APT8014L2FLL

Abstract: MAX7238
Contextual Info: APT8014L2FLL 800V 52A 0.140Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

62n25

Abstract: 62n25 mosfet 62n2 247TM
Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 62N25 IXFK 62N25 VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient

APT23F60B

Abstract: APT23F60S MIC4452
Contextual Info: APT23F60B APT23F60S 600V, 24A, 0.29Ω Max, trr ≤220ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT8024B2VFR

Abstract: APT8024B2VR APT8024LVR
Contextual Info: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT56M50B2

Abstract: APT56M50L MIC4452
Contextual Info: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

110N30

Contextual Info: Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A Ω = 26 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ

IRM-38

Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings