250N10 Search Results
250N10 Price and Stock
IXYS Corporation IXFK250N10PTransistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264 |
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IXFK250N10P | 1 | 1 |
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IXFK250N10P | 14 |
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IXYS Corporation IXFX250N10PTransistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™ |
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IXFX250N10P | 1 |
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IXFX250N10P |
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IXFX250N10P | Tube | 300 |
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Renesas Electronics Corporation RBA250N10CHPF-4UA02#GB0Power MOSFET, N Channel, 100 V, 250 A, 2400 ?ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: RBA250N10CHPF-4UA02#GB0) |
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RBA250N10CHPF-4UA02#GB0 | Tape & Reel | 12 Weeks | 800 |
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RBA250N10CHPF-4UA02#GB0 | 435 |
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RBA250N10CHPF-4UA02#GB0 | 14 Weeks | 800 |
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United Chemi-Con Inc ESMH250VSN103MR25SAluminum Electrolytic Capacitors - Snap In 10000uF 25 Volt |
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ESMH250VSN103MR25S |
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United Chemi-Con Inc ESMH250VSN103MP40SAluminum Electrolytic Capacitors - Snap In 10000uF 25 Volt |
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ESMH250VSN103MP40S |
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250N10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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weight TO-264Contextual Info: Advance Technical Information IXTK 250N10 High Current MegaMOSTMFET VDSS ID25 = 100 V = 250 A Ω = 5 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 100 |
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250n10728b1123b1065b1+1 | |
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Contextual Info: IXTK 250N10 High Current MegaMOSTMFET VDSS ID25 = 100 V = 250 A Ω = 5 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 100 V VGS Continuous ±20 V VGSM |
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250n10065b1728b1123b1 | |
250N10
Abstract: megamos
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250n10065b1728b1123b1+1 |