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APT8024LVR Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
APT8024LVR		Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF	38.69KB	2
APT8024LVR		Microsemi	Power MOS V MOSFET	Original	PDF	138KB	4

APT8024LVR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
APT8024B2VFR Abstract: APT8024B2VR APT8024LVR Contextual Info: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt8024b2vr apt8024lvr o-264 apt8024b2vfr +1o-247	PDF
diode 132 Contextual Info: APT8024B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt8024b2vr apt8024lvr o-264 apt8024 +2o-247 diode 132	PDF
Contextual Info: APT8024B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt8024b2vr apt8024lvr o-264 apt8024 +1o-247	PDF
Contextual Info: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt8024b2vr apt8024lvr o-264 apt8024b2vfr +1o-247	PDF
Contextual Info: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt8024b2vr apt8024lvr o-264 apt8024b2vfr +1o-247	PDF
5017BVR Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	mil-prf-19500 iso9001 5017bvr 40814 +85020bn 1431 t apt5010lvr apt1001rblc apt10050 apt30m85bvr apt5020blc apt2x101d60	PDF
APT6015LVR Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	mil-prf-19500 iso9001 apt6015lvr 5020bn +8apt6011lvfr arf450 5017bvr apt2*61d120j fredfets apt8015jvr apt100gf60lr apt5014lvr	PDF