NTY100N10G Search Results

NTY100N10G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NTY100N10G		On Semiconductor	Transistor Mosfet N-CH 100V 123A 3TO-264 RAIL	Original	PDF	152.7KB	8

NTY100N10G Price and Stock

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Rochester Electronics LLC NTY100N10G MOSFET N-CH 100V 123A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTY100N10G	Tube	2,692		40	1 - 10 - 100 $7.51 1000 $7.51 10000 $7.51	Buy Now
onsemi NTY100N10G MOSFET N-CH 100V 123A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTY100N10G	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	NTY100N10G		2,692		42	1 - 10 - 100 $8.57 1000 $7.67 10000 $7.22	Buy Now
Quest Components	NTY100N10G		22			1 $10.23 10 $7.67 100 $7.67 1000 $7.67 10000 $7.67	Buy Now
Rochester Electronics	NTY100N10G		2,692		1	1 - 10 - 100 $6.86 1000 $6.14 10000 $5.78	Buy Now

NTY100N10G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AN569 Abstract: NTY100N10 NTY100N10G V15020 Contextual Info: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V Typ • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode	Original	NTY100N10 NTY100N10/D AN569 NTY100N10 NTY100N10G V15020	PDF
NTP2955G Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G Contextual Info: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature	Original	CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G	PDF
Contextual Info: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V Typ • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode	Original	NTY100N10 NTY100N10/D	PDF
STP4119 Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a Contextual Info: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices	Original	SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a	PDF