T03J Search Results

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

M9412

Abstract: 2SC5047
Contextual Info: SANIYO T r a n s i s t o r s f o r Very Hig h - D e f i n i t i o n CRT D i s p l a y H o r i z o n t a l D e f l e c t i o n Output Use 2 otc S t r u c t u r e a n d S t ru c tu r e p a tt e r n e d with a large number of u n i t s c o n s i s t i n g of base

Contextual Info: TOSHIBA TMP96CM40F TLCS-900 Series CMOS 16-bit Microcontrollers TMP96CM40F 1. Outline and Device Characteristics T h e T M P 9 6 C M 4 0 F are h ig h -s p e e d a d v a n c e d 16 -b it m ic ro ­ • C a n b e e x p a n d e d u p to 16 M b y te s for b o th p ro g ra m s a n d

Contextual Info: TOSHIBA TLCS-900 Series TMP96C031N/F CMOS 16-bit Microcontrollers TMP96C031N/TMP96C031F 1. Outline and Device Characteristics The TMP96C031 are high-speed advanced 16-bit microcon­ trollers developed for controlling medium to large-scale equip­ ment. TMP96C031N comes in a 64-pin shrink DIP; the

2SC4630LS

Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Contextual Info: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

2SB694H

Abstract: 2sd717 2SD689 2SD668A 2SB646 2sb678 2SB686 2SD663 2SD666 2SD706
Contextual Info: - 222 - Ta=25'C, * E(](ÎTc=25<C M £ ít rrj £ ¿2! «CEu (V) 2SD661 fâT LF LN A 2SD661A tëT tôT LF LN A 2SD662 2SD662B 2SD663 2SD666 2SD666A 2SD667 2SD667A 2SD668 2SD668A fôT m ±nm ai B aL ai Hi hä B5: 2SD670H BÎL HÎL BÍL ZÒUOM i l i 2SD669

DSF11036

Abstract: 2A Fast Recovery Diodes DSF1114 DSF912 22-button MF12 DSF4012 DSF5006 MF35 MF70
Contextual Info: •im n iiw r»i 1 mnni i rmiTifrff *1 MARCONI CKT TECHNOLOGY 3DE D ■ 5703442 0001714 2 ■ » T d>3-23 FA ST RECOVERY D IO D ES tvpa No. and Deslj nation Repetitiva Peak Revaraa Voltages Available Non* Repetitive Peak Reveráa Voltage VRRM V VRSM V 600-1200

SC3416

Abstract: tt2202 2SA1371 2SC3790 2SC4732 2SC5291 2SA1829 2SC2857 2SC4075 TD-220F
Contextual Info: SA$iYO Transistors for TV Display Video Output Us P c i t u r c s ^Excellent HP characteristic. * S m ll reverse tn n sfer capacitaac*. *C c«*lei*ntiry WP and NW type*. ♦ Adoption of MBIT, FB€T processes. ^Highly resistant to d ie le c tric breakdown.

ejet

Abstract: ne N8 SOLITRON Solitron Devices Solitron product catalog
Contextual Info: iJflE D SOLITRON DEVICES INC -Citron • 03bfibG2 00G3bbl bT? « S O D PRODUCT CATALOG DEVICES.INC. « E iW ï^ ^ im îïR f c W Â a . MAXIMUM RATINGS PER DIODE sneoL PARAMETER WORKING PEAK VRRM REVERSE VOLTAGE AVERAGE FORWARD CURRENT IF AV PEAK ONE CYCLE

Contextual Info: SA0YO T r a n s i s t o r s for V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t Use Transistors for CRT horizontal deflection output use must be of high-breakdown voltage.high-current,high-speed

INVERTER 50 kW

Abstract: BYX46 BYX46-200 BYX46-200R BYX46-600 BYX46-600R t-03-JL9 FS50H dgmlb
Contextual Info: BYX46 SERIES PHILIPS INTERNATIONAL SbE ]> • 7 1 1 0 a 2 b Q 0 4 1 b 3 D 532 ■ P H I N _ FAST SOFT-RECOVERY RECTIFIER DIODES - n ^ • With controlled avalanche Diffused silicon diodes in DO -4 metal envelopes, capable of absorbing transients. They are primarily

sanyo transistor tt series

Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Contextual Info: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.

2SB504

Abstract: 2SB507 2SB506A 2SB508 2SB511 2SD325 2sb560 2SB506 2SB536 2SD331
Contextual Info: - 54 - Ta=25cC, *EP(äTc=25‘ C m % f fl £ & m VcBO VcEO lc ( D O Pc Pc* (V) (V) (A) (W) (W) ICBO (max) ( j ü A) % tä 4# te 0 ^ 2 5 *0 ) [*E P (ä typ 3 hF E VcB (V) (min) (max) Vc e (V) ¡ c/ I e (A) (max) (V) (V) Ic (A) Ib (A) 2SB434G LF PA/SW -60

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

C4106 transistor

Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Contextual Info: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower

SPD221P

Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Contextual Info: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).

Contextual Info: TOSHIBA TMP96PM40 CMOS 16-bit MICROCONTROLLERS TMP96PM40F 1. OUTLINE AND DEVICE CHARACTERISTICS TM P96PM 40F is h igh -sp eed advanced 1 6 -b it m icrocon trollers d ev elo p ed for controlling m edium to large-scale equipm ent. The TM P96C141AF does not h ave a

Contextual Info: TOSHIBA TMP96C141AF CMOS 16-bit MICROCONTROLLERS TMP96C141AF 1. OUTLINE AND DEVICE CHARACTERISTICS TM P96C141AF is high-speed advanced 16-bit m icrocontrollers developed for controlling medium to large-scale equipm ent. TMP96C141AF is housed in an 80-pin flat package.

F527S

Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
Contextual Info: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.

Contextual Info: SAtfYO P o w e r S c h o t t k y B a r r i e r D i o d e s For L a r g e - S i g n a l Use Sanyo Schottky barrier diodes (SBD) have been developed by our original technology. They are available for making sets smaller in size and lighter in veight. Sanyo power SBDs with breakdown voltages of 50V, 90V and 180V can be applied to various uses.

2SD818

Abstract: 2SD844 fst 240 2sb764 2SD859 2SD811 2SD812 2SD813 2SD814 2SD814A
Contextual Info: - 226 - T a = 2 5 eC . * E P ( ä T c = 2 5 ‘ C »CBO m Ic(DC) Pc Pc* (A) (W) (W) (V) tt (UA) (T a = 2 5 t : ) U/tr V/Nr" »CB (V) M lldA/ (V) m hp fmay^ (A ) 1" (V) [* E P (S typ ffi] '(V)' '(V)' Ic (A) 0.5 6 50 1000 900 10 40 5 PA 80 80 5 40 50 80 40

NPN Transistor 600V SC-62

Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Contextual Info: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and

2SC3253

Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Contextual Info: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t