T0247 Search Results

T0247 package

Abstract: marking alpha omega ALPHA YEAR CODE A F U marking code alpha marking code aos Lot Code Week
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Document No. Version PD-01888 Title AOK15BÓOD Marking Description T0247 PACKAGE MARKING DESCRIPTION ^ K 1 5B60D oI 1 1 U ° ^ OJ 1 o 0 p O y ^ K 1 5B60D o FAYWLT \i \J U Standard product NOTE: LOGO K15B60D F A Y W L&T - AOS Logo

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

LS T73

Abstract: BFC42
Contextual Info: nil IF t i mi BFC42 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 5 31 (0 209) 1 4» (0 0S8) rD i t 3S5 (0 140) 3 81 {Q 150) VDSS 1 (0 040) ^ Terminal 1 Terminal 3 I

Contextual Info: STW55NE10 N - CHANNEL 100V - 0.021 i l - 55A - T0247 STripFET POWER MOSFET TYPE S T W 5 5N E 1 0 . . . . . V dss 100 V R d S o Id ii < 0 .0 2 7 Q. 55 A TYPICAL R D S (on) = 0.021 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C

BFC47

Contextual Info: Illl iF ti mi BFC47 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS S 31 (0 2 0 9 ) 1 4P 10 0S 9) 'DSS 0*0(001<| I D(cont) 1 01 (0 0 4 0 ) R DS(on) " 1 0 5 (0 4 3 0 f

BUT11A1

Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Contextual Info: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS

BFC43

Contextual Info: mi iP É i llll BFC43 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) !DS(on) Terminal 1 Terminal 3 Gate Source Terminal 2 ABSOLUTE MAXIMUM RATINGS V DSS

T0247

Abstract: sml1001rAN SML1001RBN
Contextual Info: SEMELAB pie SELECTOR GUIDE VDSS RD SS on ID Pd T03 T0247 T0258 T03G100 T0247 T0247 T0258 D3PAK SOT227 MPack F-Pack T03 T0247 T0254 T03 T0220SM T0247 T0254 I T254 T0257(l) T03 T0247 T0254 T0257 T0220 T03 T0247 T0254 (I) T0254 T0257 T0257(l) T0220 SOT227 T0264

T0247 package

Abstract: alpha marking code ALPHA YEAR CODE K10B60D
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR T0247 PACKAGE MARKING DESCRIPTION oI 1 P o y ^ K 1 0B60D ^ K 1 0B60D FAYWLT FAYWLT O \i \J U Standard product NOTE: LOGO K10B60D F A Y W L&T 1 U° ^ O J 1 o 0 - AOS Logo - Part number code - Fab code - Assembly location code - Year code

PHW7N60

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor PINNING - SOT429 T0247 PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance Id F*tol RdS(ON) PIN CONFIGURATION MAX. UNIT 600 7 147 1.2

Contextual Info: lili mi SEME BFC48 LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS ' 5 31 (0 209) 1 4» IP 0S9) 'DSS 0 40 (0 0161 0 70 (0 031) I D(cont) 1 01 (0 0 4 0 ) ^ R DS(on) I 10 5 |0 430)J

Contextual Info: lili e FFe iiii SEME BFC51 LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 5 31 (0 20» ) t * 9 (0 0 5 8 ) - fs|_ 3 J 5 (0 14 0) 3 11 (0 ISO) 'DSS 0 4 0 (0 016) I D(cont)

Contextual Info: POWER THICK FILM ON STEEL RESISTORS T0126, TO220, and T0247, 25 to 100 WATT R E S IS T O R S ‘ C A P S & C O ILS ‘ D E LAY LINES HDP SERIES FEATURES □ □ □ □ □ □ Industry’s most economical TO -style power resistors! Standard resistance range: 0.05C2 to 1 0KQ

2x15

Abstract: STPS125U STPS10L25D
Contextual Info: POWER RECTIFIERS rz 7 POWER SCHOTTKY DIODES SMA S MB DPAK T 0220AC ^ 7/ D2PAK T0220AB SGS-THOMSON Ranœ iiLiEOTOiDËi ISOWATT22QAB T0247 ISOTOP1 LOW VF SCHOTTKY RECTIFIERS T j max =150°C (except for 15V & 25V @ 125°C) lo V rrm VF @ lo Max (A) (V) STPS5L25B

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

STW11NB80

Abstract: T0-247
Contextual Info: STW11NB80 N-CHANNEL 800V - 0.65Ω - 11A - T0-247 PowerMESH MOSFET TYPE STW11NB80 • ■ ■ ■ ■ ■ V DSS 800 V R DS on < 0.8 Ω ID 11 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

APT25GP120B

Abstract: IC 7411 T0-247
Contextual Info: APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

9442

Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Contextual Info: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243

228F

Abstract: APT35GP120B T0-247
Contextual Info: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

AIAG PPAP MANUAL

Abstract: ds90uh926 Traffic sign recognition LM 338 Variable Regulator AEC-Q003 SMD Code 12W SOT-23 PAL 007 E MOSFET PAL 0007 E MOSFET lmh6629 transistor SMD 12W sot-23
Contextual Info: Automotive Solutions Solutions Guide national.com/automotive 2010 Vol. 2 Power Solutions Interface Solutions Data Conversion Temperature Solutions Audio Solutions Amplifiers Design Resources Temp Sensor GPS Rx Speed Input Temp Input Temp Sensor Amp Amp ADC

Contextual Info: DI OT EC E L E C T R O N I C S CORP SfiE V EflMTlO? GGOGIST ^bl « » I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: FSDP-102-A2 ' - n 0 3 -1 3 1 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES

Contextual Info: SflE T> • DIOTEC ELECTRONICS CORP 204^107 GDDD171 HbT « D I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310) 767-7958 Data Sheet No.: FSDP-301-A3 ✓"'P'. r>7. - \ ^ 1 3 AMP HIGH RELIABILITY FAST RECOVERY DIODES

Contextual Info: S i GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4752-2.1 ITS08C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS08C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage