T023 Search Results

DCF1900-T0230

Abstract: dcf1900
Contextual Info: DCF Drop-in Isolators & Circulators DCF1900-T0230 2.3GHz to 2.7GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 2.3GHz to 2.7GHz 20 dB min 0.4 dB (max) 1.25:1 1000 Watts (max)

SST5484

Contextual Info: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max | Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0

DCF1900-T0230

Contextual Info: DCF Drop-in Isolators & Circulators DCF1900-T0230 2.3 GHz to 2.7 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 2.3 GHz to 2.7 GHz 20 dB min 0.4 dB (max) 1.25:1 1000 Watts (max)

N-Channel JFET FETs

Abstract: T072
Contextual Info: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber | Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60

Contextual Info: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. DCF1900-T0230 2.3 GHz to 2.7 GHz DCF Drop-in ISOLATORS & CIRCULATORS Specifications RF Frequency Isolation

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FH46 The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FM46L The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89CM42 The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FH42L The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FM42L 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/14 1 First Release 2008/9/3 2 Contents Revised 2009/7/21 3 Contents Revised Table of Contents TMP89FM42L 1.1 1.2 1.3 1.4

w1p84

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FM82 2009 TOSHIBA CORPORATION All Rights Reserved TMP89FM82 Considerations for using Motor Control Circuit PMD:Programmable Motor Driver Following considerations are necessary for writing data to electrical lead angle timer (ELDEG) and reading 2 bytes

2410m

Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■

Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FH42 2009 TOSHIBA CORPORATION All Rights Reserved TMP89FH42 Considerations for Using Both Mask ROM and Flash Products ・ Flash Memory Control Registers Mask ROM products do not contain the flash memory control registers shown in the table below. Therefore,

74FCT623AT

Contextual Info: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA BE INTERSIL C D 54/74FC T623 C D 54/74FCT623AT July 1990 Octal-Bus Transceiver, 3-State, Non-Inverting T yp e F e a tu re s: The CD54/74FCT623 and CD54/74FCT623AT octal-bus transceivers use a small-geometry BiCMOS technology. The

2N2907a national

Abstract: 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725 2N2904A 2N2905A 2N2907A
Contextual Info: bôE T> m bS 0 1 1 3 G □DB'iSe'i c m NATL S E M I C O N D Devices VtEOtsusti Volts Min NPN (ns) Max mA bpE @ l( Mia mA VcE(sat)@lc& (Volts) Max mA mA *T (MHz) Min Package PD (Amt) (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

MARKING bs170

Contextual Info: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

Contextual Info: REV DESCRIPTION DATE APPROVED SEE SHEET #1. TO—5 PART NO. TO—5 TO— 6 T0-9 10-13 .225 .250 .300 .225 I.D. 5.7mm 6.4mm 7.8mm 5.7mm .375 .375 .437 .310 O.D. 9.5mm 9.5mm) 11.1mm 7.9mm) TO-18 PART NO. TO-12 TO— 16 T0-17 T0-18 TO—20 TO—27 .125 .125

Contextual Info: CII U C J I N O I O C U 512K x 8 Asynchronous GS74108J/TP 8/10/12/15,3.3V GS74108J/TP Center Power Center Ground Features Functional Description • Fast access time: 8, 10, 12, 15ns. • Low Operating Current - 150/125/110/90 mA at minimum cycle time. • Single 3.3V +10%/-5% power supply.

Contextual Info: TO SHIBA 2SA1621 2 S A 1 621 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 . 3 • • High hpE : hpE = 100~320 Complementary to 2SC4210 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

NTE130

Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)

FCM 7010

Contextual Info: DR2S/3S7000 SM2R/3R7000 ätSJBx-fw^P—^U— Gang of Dip Rotary Switches i Features '#&*• 1. 1. 2. 2. High Density Installation Minimization of Installation Cost 3. S M T ^ H ^ v ^ - lC j : 5 Ê ii) g ^ 'W 8 Ê ( S M 2 R / 3. Automounting Possible by SM T Mounter

h a 431 transistor

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDS-431-017 REV: 1 Page: 1/5 0.39" Single Digit Displays PART NO. : ELS-431GWA ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ● Instrument panels

2n6152

Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
Contextual Info: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id