MMBF170 Search Results

k6z transistor

Abstract: "Marking code" K6Z SOT-23 transistor k6z MMBF170 rohs J-STD-020A MMBF170 MMBF170-7
Contextual Info: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODELS: MMBF170 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A B D G Mechanical Data · · · · ·

MMBF170LT1

Abstract: MMBF170LT3
Contextual Info: MMBF170LT1 Power MOSFET 500 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 ms VGS VGSM

MARKING bs170

Contextual Info: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

Contextual Info: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features SOT-23 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage -H : h“ A t TOP VIEW B 1 Mechanical Data N Case: SOT-23, Molded Plastic

MOSFET bs170

Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
Contextual Info: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

1N4007

Abstract: MMBF170 DF06 PTC 10k 1n4148 STEVAL-IHT003V1 11N4007 PMBT2222A PMBT2907A X0205N
Contextual Info: STEVAL-IHT003V1 SCHEMATIC J16 3 D1 1 1N4007 START R2 470k 4 R1 620 D7 R3 510k + J17 3 R6 1 2 T2 3 22n PMBT2907A Q1 X0205N MMBF170 M1 T1 Q2 1N4148 PMBT2222A R7 J18 3 R5 D2 10k C 220 C3 1 ?n RUN DZ1 C2 10n R8 1MEG VC2 GND A C4 ACST6 VAK 1 - IA PTC DF06 47 BZX55C

k6z sot23

Contextual Info: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A B D G Mechanical Data · · · · · · H Case: SOT-23, Molded Plastic

Contextual Info: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · SOT-23 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A D TOP VIEW Mechanical Data · · · · · G C S D E

transistor marking ra

Contextual Info: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 T0-236AB M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rce V o lta g e VD SS 60 Vdc D ra in G a te V o lta g e Vd g s 60 V dc G a te -S o u rce V olta g e — C o n tin u o u s - N o n -re p e titive <tp $ 50 /is)

MMBF170 rohs

Abstract: MMBF170 k6z transistor MMBF170 GATE-SOURCE MMBF170-7 transistor k6z MMBF170-7-F
Contextual Info: SPICE MODELS: MMBF170 MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed B Low Input/Output Leakage C G TOP VIEW S Available in Lead Free/RoHS Compliant Version Note 2

Contextual Info: April 1995 N BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products have been designed to

Contextual Info: MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1

Contextual Info: MMBF170 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)

Contextual Info: MMBF170LT1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)800m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)225m Minimum Operating Temp (øC)-55õ

transistor MOSFET BS170

Abstract: MOSFET BS170
Contextual Info: & N a t i o n al A pril 1995 Semiconductor" BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

BS170

Abstract: BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170
Contextual Info: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been

transistor k6z

Abstract: MMBF170W-7-F MMBF170W
Contextual Info: MMBF170W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ADVANCE INFORMATION Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package

Contextual Info: MMBF170L, NVBF170L Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant

MMBF170

Abstract: BS170 application note BS170 CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92
Contextual Info: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

k6z transistor

Abstract: K6Z SOT-23 SOT23 k6z
Contextual Info: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODELS: MMBF170 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A B D G Mechanical Data · · · · ·

Contextual Info: MMBF170 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · SOT-23 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A D TOP VIEW Mechanical Data · · · ·

Contextual Info: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT SPICE MODEL: MMBF170 TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A B D G Mechanical Data · · · · ·

Contextual Info: MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

code marking 6z sot-23

Abstract: diode 6z sot-23 TO-236-3 TO236 footprint Power MOSFET N-Channel sot-23 marking 6Z MOSFET SOT-23 sot-23 MARKING CODE 6Z to-236 MARKING QG 6 PIN
Contextual Info: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http://onsemi.com •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage