T BC109 Search Results

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

BC107

Abstract: bc109 bc108 bc109 gain T BC109 c109s BC179 BC107-BC108-BC109 BC108-BC BC-108
Contextual Info: 3DE D • 7 ^ 2 3 ? Q03QÔSS S T r z 7 ^ 7# S G S -T H O M S O N - z ° i - n B C 107 B C 1 0 8 -B C 109 S G S -T H 0 MS 0 N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS D E S C R IP T IO N The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They

KLC-6

Abstract: BC107 BC109 cemi tranzystor BC108 BC177 BC178 BC179 T018
Contextual Info: 1 - 74/2 T R A N Z Y S T O R Y n-p-n BC107, BC108 i BC109 SWW 1156-211 T ra n z y sto ry k rz em o w e e p ip la n a rn e m ale j m ocy m alej czçstotliw oéci. T ra n z y sto ry BC107 i BC108 p rz ez n ac zo n e do sto so w an ia w u k la d a c h sto p n i w ejâcio w y ch i s te ru j^ c y c h m a le j

Contextual Info: •er | « BC109 SEMICONDUCTOR FORWARD EflEBNAUONAL ELECTRONICS LID. NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t T a i r i F ^ r Symbol R ating C h m c te ristk 30 Collector-Base Voltage Vcbo Collector-Emitter Voltage

BC140 equivalent

Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18

2N290

Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018
Contextual Info: Metal Can Device Type 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0-48 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T 072 T 072 T 072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200

BC177, BC178, BC179

Abstract: 45X10 177b bc178b bc179
Contextual Info: 3QE » • 712*1237 UUJUorn o — -j / T T SGS TH O M S O N ^ 7 # [ * [ ^ m i O T r e s S 6 BC177 BC 178-B C 179 S -T H O M S O N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors In TO-18 metal case.They

741G08

Abstract: HL6 smd npn transistor bc148 datasheet 2N3904 H36 BC137 BC148 BC118 BC148 pin configuration SMD RA3 PNP R234A
Contextual Info: A INTEL PENTIUM® III & INTEL® CELERON R PROCESSOR/ 810E2 CHIPSET UNIVERSAL SOCKET 370 PLATFORM UNIPROCESSOR CUSTOMER REFERENCE SCHEMATICS REVISION 1.0 Title A Page Cover Sheet 1 Block Diagram 370-pin socke t 2 3,4 A G T L T e rmination Clock Synthesi zer

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

bcy78

Abstract: BFS98 2N3906 BC559 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA06
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

BC559

Abstract: MPS6566 transistor BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06 ZTX304
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

audio pre-amplifier bc109

Abstract: BFS98 for 2n3904 ZTX109 BC182P BC546P BCY65EP BFS61 ZTX114 MPSA05
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

bcy78

Abstract: BFS98 2N3804 MPS3645 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
Contextual Info: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.

low noise transistors

Abstract: BC550P ZTX109 2N3804 2N5086 2N5087 2N5209 2N5210 Scans-00106609 BCY65EP
Contextual Info: NPN LOW NOISE T A B LE 5 - NPN SILICO N PLANAR LOW N O ISE T R A N S IS T O R S The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. The devices are listed in order of decreasing collector/emitter breakdown voltage V CE0 ,

ZT84

Abstract: ZT87 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN LOW LEVEL T A B L E 1 - N PN S IL IC O N P L A N A R LOW LEVEL T R A N S IS T O R S The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

ZT92

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL T A B L E 1 - N PN S IL IC O N P L A N A R LOW LEVEL T R A N S IS T O R S The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

bc238

Abstract: ZTX304 ZTX108 BC107P BC182P BC212P BC546P BC547P BC556P BC557P
Contextual Info: TABLE 1: NPN GENERAL PURPOSE The d e vice s s h o w n in this table are general p urpose tra n sisto rs d esigned for sm all signal am plification from d.c. to radio frequencies. Typical application areas include: A U D IO F R E Q U E N C Y A M P L IF IE R S , D R IV E R S and O U T P U T S T A G E S , O S C IL L A T O R S , A N D G E N E R A L

BC177, BC178, BC179

Abstract: BC179 BC178 BC118 BC177 BC111 BC7f tranzystor BC107 BC108
Contextual Info: 4 - 74/2 T R A N Z Y S T O R Y p-n-p * BC177, BC178 i BC179 SWW 1156-211 T ra n z y sto ry k rz em o w e e p ip la n a rn e m ale j m ocy m alej czçstotliw osci. T ra n z y sto ry BC177 i BC178 p rzeznaczone do stosow an ia w p rz ed w z m ac n iac za ch m ale j czçsto tliw o sci i sto p n iac h ste ru j^ cy c h .

BC109

Abstract: BC107 BC103 BC108-BC109 BC108 BC 55 r7 BC108-BC bc109 gain BC-108-2 BC177
Contextual Info: T> 3QE m 7^ETS3? QQ3DÔSS S • ~ ^ F Vr,- - _ f= 7 S M ' S G G I S - T ^ © H O M S O - Z ° i N l L i © T f[R M a û S B C - [ 1 B C 1 0 7 1 0 8 - B C 1 0 9 “ S-TH0MS0N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS

sC3228

Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
Contextual Info: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB

2N4007

Abstract: BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent
Contextual Info: SPRAGUE Metal-Encased Silicon S E P T R Transistors HIGH-VOLTAGE VIDEO OUTPUT TRANSISTOR >- Type No. os < Pd T* = 25 C s V BR Ic B O CEO V o lts EBO V o lts iiA lc Watts CBO V olts Max. (m A) 1.0 300 250 7 ' Lim ts Con dition s V <BR) NPN 2N3440 D-C C U R R E N T G A I N ( h FE)

2N1893

Abstract: 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
Contextual Info: NPN LOW LEVEL T A B L E 1 - N P N S IL IC O N P L A N A R L O W L E V E L T R A N S IS T O R S The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military