PN3053 Search Results

2n3053 complementary

Abstract: 2N3053 2N4037 PN3053 PN4037
Contextual Info: 2N/PN3053 2N/PN4037 COMPLEMENTARY SILICON TRANSISTORS T0-92A TO-39 2N/PN3053 NPN & 2N/PN4037(PNP) are complementary silicon planar epitaxial transistors for use in AF medium power drivers and outputs, as well as for switching applications. C E B 2N3053 2NÌ037

C2N3053

Contextual Info: 2N/PN3053 2N/PN4037 COMPLEMENTARY SILICON TRANSISTORS T0-92A 2N/PN3053 NPNX &^2N/PN4637(PNP are complementary silicon planar epitaxial transistors for use in AF medium power drivers and outputs, as well as for switching applications. C E B 2N3053 2N4037 ABSOLUTE MAXIMUM RATINGS Fo r p-n-p devices, voltage and current values are negative,

Contextual Info: 2N/PN3053 2N/PN4037 COMPLEMENTARY SILICON TRANSISTORS T0-92A TO-39 2N/PN3053 NPNX &^2N/PN463?(PNP are complementary silicon planar epitaxial transistors for use in AF medium power drivers and outputs, as well as for switching applications. C E B 2N3053 2N4037

2N3053

Abstract: PN3053 PN4037 S510 2n3053 complementary
Contextual Info: 2N/PN3053 2N/PN4037 COMPLEMENTARY SILICON TRANSISTORS complementary T0-92A TO-39 silicon planar epitaxial transistors for use in AF medium power drivers and outputs, as well as for switching applications. C E £ 2N3053 PN3053 PN4037 ABSOLUTE MAXIMUM RATINGS For p-n-p devices, voltage and current values are negative,

C2N3053

Abstract: transistor 2n3053 E2N3 PN3053 2N3053 ST 2N3053 2N4037 PN4037 m s510
Contextual Info: *• * _ so 2N/PN3053 NPNX &^2N/PN463?(PNP are complementary 2N/PN3053 2N/PN4037 COMPLEMENTARY SILICON TRANSISTORS T0-92A TO-39 silicon planar epitaxial transistors for use in AF medium power drivers and outputs, as well as for switching applications. C E B

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

pn3020

Contextual Info: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO ICBO @ VCB V I M iN ( v ' M pN iV I M IN Ifi.A t M AX (V 20 HFE @ VC 4 1C M iN MAX IV I 5 5 8 150 150 150 150 150 12 12 15 15 12 100 100 100 100 80 10 150 10 150 10 150 1 50 1 50 12 12 12 10 10 80 100 100 130 130 1 1

sC3228

Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
Contextual Info: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB

BC286

Abstract: 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901
Contextual Info: CRIMSON SE M IC ON DU CT OR INC TT DE | SSlMGTt DDDDET3 □ 2514096 C R I M S O N S EM IC O N D U C T O R INC 99D D 00293 T - 2 - 7 - ó / By.CEO BVCBO BVEBO ICBO @ VCB HFE @ VC & iC v COB Vi MiN IV1M.N . MN i-Al MAh (V MIN MA> .V (-*• i|l w»> FT V-'l

2N6712

Contextual Info: GENERAL-PURPOSE TRANSISTORS HIGH-VOLTAGE TRANSISTORS DARUNGTON TRANSISTORS RF/UHF/VHF AMPLIFIERS AND CATV TRANSISTORS * SCR SENSITIVE GATE SILICON CONTROLLED RECTIIFIERS * * * * GENERAL- PURPOSE TRAMS ISTORS These general purpose transistors are designed to meet general applications with current up to 2A,