S6100 Search Results

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Q600

Abstract: 2N4101 2N4102 S2060 S2061 S2062 S2400 S2600 S2610 S2620
Contextual Info: Application Information continued SCR's Current *T (R M S ) a Voltage Range - V Package Series T O -2 2 0 A 8 (V E R S A W A T T ) S2060 S2061 S2062 Typical Applications LOW -CURRENT S E N S IT IV E -G A T E 4 15-600 Logic Interface to Power C o n tro l

hp optical encoder

Abstract: s9040 S9140
Contextual Info: W fip l H E W L E T T mLftm P A C K A R D Two and Three Channel C odew heels for use w ith HP Optical Encoder Modules Technical Data Features: • Codewheels Available in Glass, Film, and Metal • Available in Two Standard Diameters • Cost Effective • Resolutions from 96 CPR to

Si9424BDY-T1-E3

Abstract: Si9424BDY Si9424BDY-T1
Contextual Info: Si9424BDY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 7.1 0.033 at VGS = - 2.5 V - 6.1 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT S SO-8 S 1

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

Si4736DY

Contextual Info: Si4736DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 13 0.0105 at VGS = 4.5 V 12 • TrenchFET Power MOSFET • LITTLE FOOT® Plus Schottky • Shoot-Thru-Free

Contextual Info: Si4462DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 1.50 0.510 at VGS = 6.0 V 1.45 • TrenchFET Power MOSFET • PWM Optimized for fast Switching Pb-free Available

SI4856DY-T1

Abstract: Si4856DY Si4856DY-T1-E3
Contextual Info: Si4856DY Vishay Siliconix New Product N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.006 at VGS = 10 V 17 0.0085 at VGS = 4.5 V 14 • TrenchFET Power MOSFETS • 100 % RG Tested Available RoHS* APPLICATIONS COMPLIANT • Buck Converter

Si4955DY

Abstract: Si4955DY-T1-E3
Contextual Info: Si4955DY Vishay Siliconix New Product Asymmetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 - 30 Channel-2 - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 0.027 at VGS = - 4.5 V - 7.0

Si4500BDY

Abstract: Si4500BDY-T1 Si4500BDY-T1-E3
Contextual Info: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V

Contextual Info: Si4923DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free

Contextual Info: Si9926BDY Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 8.2 0.030 at VGS = 2.5 V 6.7 • TrenchFET Power MOSFETS Pb-free Available RoHS* COMPLIANT SO-8 D1 S1 1

S695

Abstract: AN12K S-6108
Contextual Info: CMOS PARALLEL-TO-SERIAL FIFO 2048 x 9-BIT & 4096 x 9-BIT IDT 72131 IDT 72141 FEATURES: DESCRIPTION: • 35ns parallel port access time The IDT72131/72141 are high-speed, low power parallel-toserial FIFOs. These FIFOs are ideally suited to serial communica­

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: Si4856DY Vishay Siliconix New Product N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.006 at VGS = 10 V 17 0.0085 at VGS = 4.5 V 14 • TrenchFET Power MOSFETS • 100 % RG Tested Available RoHS* APPLICATIONS COMPLIANT • Buck Converter

Contextual Info: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available

Contextual Info: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch

Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS

Si4464DY-T1-E3

Abstract: Si4464DY Si4464DY-T1 72051
Contextual Info: Si4464DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • TrenchFET Power MOSFET • PWM Optimized for (Lowest Qg and Low RG) Pb-free Available

Si4911DY

Contextual Info: Si4911DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 8.4 0.023 at VGS = - 2.5 V - 7.6 0.029 at VGS = - 1.8 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process

ic tms 1000

Abstract: TMS 5100 tms 1000 TMS 6100 tms6100
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Group eiv e d 4 t C 19E0 ;OURCE 2 MOS INTEGRATED CIRCUITS FOR JUNE 1980 T e x a s In s t r u m e n t s INCORPORATED I 1. 2. FEATURES • High q u a lity speech at low data rate. • Performance and re lia b ility o f electronic systems based on integrated circuits.

Si1303DL

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free

RCA scr package N TO-8

Abstract: rca 2N4102 IGNITION WITH SCR rca scr SCR 100A scr 2n6396 S20620 2n3528 2N4102 ignition tci
Contextual Info: SC R Product Matrix TO-i TO-66 TO 66 With Heat Rad. ¡'3SSSL. Jw a ip | f RC A SCR's 'T RM S • t SM (60 Hz) v DROM v RROM N D 2A 60A 15 25 30 50 100 150 200 250 300 400 500 600 700 750 800 4.5A 200A 5A 60A F ro * 5A 80A FTO ' 5A 80A S2400A S2400B 2N 3228

S6240M

Abstract: 2N6402 2N6403 S6230 2N6394 2N6395 2N6396 2N6397 2N6398 2N6400
Contextual Info: SC R 's continued RCA TYPE Voltage C urre n t M ax, Gate Trigger Package v DROM Temp. Range C haracteristic lT (See (RMS) •t s m Temp., T ç v RROM O perating Vq t <GT mA A A V V °C °C p. 28) C ritica l Rate o f Rise o f O ff-S tate Voltage d v /d t - V / ms