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SI4911DY Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4911DY		Vishay Siliconix	MOSFETs	Original	PDF	42.62KB	5
SI4911DY		Vishay Telefunken	Dual P-channel 20-v (d-s) Mosfet	Original	PDF	194.47KB	3
Si4911DY SPICE Device Model		Vishay	Dual P-Channel 20-V (D-S) MOSFET	Original	PDF	174.82KB	3

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Vishay Siliconix


Vishay Siliconix SI4911DY SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6.3A I(D), 20V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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SI4911DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
17127 Abstract: data 8873 AN609 Si4911DY Contextual Info: Si4911DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si4911dy an609 19-mar-07 17127 +1data 8873	PDF
Contextual Info: Si4911DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.019 @ VGS = -4.5 V -8.4 APPLICATIONS 0.023 @ VGS = -2.5 V - 7.6	Original	si4911dy 08-apr-05	PDF
Si4911DY Contextual Info: Si4911DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 8.4 0.023 at VGS = - 2.5 V - 7.6 0.029 at VGS = - 1.8 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process	Original	si4911dy si4911dy-t1 si4911dy-t1-e3 s-61005-rev +112-jun-06	PDF
Si4911DY Contextual Info: Si4911DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.019 @ VGS = -4.5 V -8.4 APPLICATIONS 0.023 @ VGS = -2.5 V - 7.6	Original	si4911dy s-03004--rev 27-jan-03	PDF
72191 Abstract: Si4911DY Contextual Info: SPICE Device Model Si4911DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4911dy 19-mar-03 72191	PDF
Si4911DY Contextual Info: Si4911DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 8.4 0.023 at VGS = - 2.5 V - 7.6 0.029 at VGS = - 1.8 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process	Original	si4911dy si4911dy-t1 si4911dy-t1-e3 18-jul-08	PDF
Contextual Info: Si4911DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 8.4 0.023 at VGS = - 2.5 V - 7.6 0.029 at VGS = - 1.8 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process	Original	si4911dy si4911dy-t1 si4911dy-t1-e3 08-apr-05	PDF
Si4911DY Contextual Info: SPICE Device Model Si4911DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4911dy s-52285rev 31-oct-05	PDF
Si4911DY Abstract: diode Rl 201 Contextual Info: SPICE Device Model Si4911DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4911dy 18-jul-08 diode rl 201	PDF
Si4911DY Abstract: Si4921DY Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application	Original	si4921dy 20-may-04 si4911dy	PDF