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SI4493DY Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4493DY		Vishay Siliconix	P-Channel 2.5-V (G-S) MOSFET	Original	PDF	42.67KB	5
Si4493DY SPICE Device Model		Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF	176.32KB	3
SI4493DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 10A 8SOIC	Original	PDF		9
SI4493DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 10A 8SOIC	Original	PDF		9

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Vishay Siliconix


Vishay Siliconix SI4493DY-E3 Trans MOSFET P-CH 20V 10A 8-Pin SOIC N
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SI4493DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch	Original	si4493dy si4493dy-t1 si4493dy-t1-e3 08-apr-05	PDF
Contextual Info: Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4493dy 2002/95/ec si4493dy-t1-e3 si4493dy-t1-ge3 +32011/65/eu js709a 02-oct-12	PDF
Si4493DY-T1 Abstract: Si4493DY-T1-E3 Si4493DY Contextual Info: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch	Original	si4493dy si4493dy-t1 si4493dy-t1-e3 s-61005-rev +112-jun-06	PDF
Contextual Info: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch	Original	si4493dy si4493dy-t1 si4493dy-t1-e3 18-jul-08	PDF
Si4493DY Abstract: Si4493DY-T1 S3142 Contextual Info: Si4493DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.00775 @ VGS = - 4.5 V - 14 0.01225 @ VGS = - 2.5 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Load Switch - 20 S SO-8 S 1 8 D S 2 7	Original	si4493dy si4493dy-t1 s-31420--rev 07-jul-03 +1s3142	PDF
Si4493DY Abstract: Si4493DY-T1-E3 Contextual Info: Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4493dy 2002/95/ec si4493dy-t1-e3 si4493dy-t1-ge3 +118-jul-08	PDF
Si4493DY Contextual Info: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4493dy 12-jun-03	PDF
on 5295 transistor Abstract: on 5295 AN609 Si4493DY 1.0722 Contextual Info: Si4493DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si4493dy an609 19-mar-07 on 5295 transistor +2on 5295 1.0722	PDF
Si4493DY Contextual Info: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4493dy 18-jul-08	PDF
Contextual Info: Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4493dy 2002/95/ec si4493dy-t1-e3 si4493dy-t1-ge3 +22011/65/eu 12-mar-12	PDF
QG-57 Abstract: Si4493DY Contextual Info: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4493dy s-52525rev 12-dec-05 qg-57	PDF
Contextual Info: Si4493DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.00775 @ VGS = - 4.5 V - 14 0.01225 @ VGS = - 2.5 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Load Switch - 20 S SO-8 S 1 8 D S 2 7	Original	si4493dy si4493dy-t1 08-apr-05	PDF