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SI4923DY Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4923DY		Vishay Siliconix	MOSFETs	Original	PDF	42.7KB	5
Si4923DY SPICE Device Model		Vishay	Dual P-Channel 30-V (D-S) MOSFET	Original	PDF	247.26KB	3
SI4923DY-T1-E3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 6.2A 8-SOIC	Original	PDF		9
SI4923DY-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 6.2A 8-SOIC	Original	PDF		9

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Vishay Siliconix


Vishay Siliconix SI4923DY-T1-E3 DUAL P-CHANNEL 30-V (D-S) MOSFET
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RS	SI4923DY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $2.78	Get Quote

SI4923DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
3771 Abstract: 8948 AN609 Si4923DY Contextual Info: Si4923DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si4923dy an609 19-mar-07 3771 +18948	PDF
Contextual Info: Si4923DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free	Original	si4923dy si4923dy-t1 si4923dy-t1-e3 18-jul-08	PDF
Si4923DY Contextual Info: SPICE Device Model Si4923DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4923dy s-52397rev 21-nov-05	PDF
Si4923DY Contextual Info: Si4923DY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.021 @ VGS = -10 V -8.3 0.031 @ VGS = -4.5 V - 6.8 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS -30 D Load Switches	Original	si4923dy s-22120--rev 25-nov-02	PDF
Si4923DY Abstract: Si4923DY-T1 Si4923DY-T1-E3 Contextual Info: Si4923DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free	Original	si4923dy si4923dy-t1 si4923dy-t1-e3 s-61006-rev +112-jun-06	PDF
DIODE 83A Abstract: Si4923DY Contextual Info: SPICE Device Model Si4923DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4923dy 0-to-10v 16-dec-02 diode 83a	PDF
Contextual Info: Si4923DY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.021 @ VGS = -10 V -8.3 0.031 @ VGS = -4.5 V - 6.8 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS -30 D Load Switches	Original	si4923dy 08-apr-05	PDF
Contextual Info: Si4923DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free	Original	si4923dy si4923dy-t1 si4923dy-t1-e3 08-apr-05	PDF
SI4923DY-T1-E3 Abstract: MOSFET cross Contextual Info: Si4923DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4923dy 2002/95/ec si4923dy-t1-e3 si4923dy-t1-ge3 +32011/65/eu 12-mar-12 mosfet cross	PDF
Si4923DY Contextual Info: SPICE Device Model Si4923DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4923dy 18-jul-08	PDF
Si4923DY Abstract: Si4923DY-T1-E3 Contextual Info: Si4923DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4923dy 2002/95/ec si4923dy-t1-e3 si4923dy-t1-ge3 +118-jul-08	PDF
Contextual Info: Si4923DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si4923dy 2002/95/ec si4923dy-t1-e3 si4923dy-t1-ge3 +32011/65/eu js709a 02-oct-12	PDF
CEP50N06 Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223	Original	o-251/to-252 o-220/to-263 ot-23 ot-223 +13ot-89 2928-8j o-220fm cep50n06 cep83a3 equivalent cep83a3 cef02n6a cep6355 fqpf8n60c equivalent cef04n6 equivalent cep63a3 cep20n06 cep76139	PDF