SI4464DY Search Results
SI4464DY Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4464DY | Vishay Siliconix | MOSFETs | Original | 43.08KB | 5 | ||
| Si4464DY SPICE Device Model | Vishay | N-Channel 200-V (D-S) MOSFET | Original | 103.08KB | 3 | ||
| SI4464DY-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.7A 8-SOIC | Original | 9 | |||
| SI4464DY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.7A 8-SOIC | Original | 9 |
SI4464DY Price and Stock
Vishay Intertechnologies SI4464DY-T1-E3Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4464DY-T1-E3 | 2,500 | 2,500 |
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SI4464DY-T1-E3 | Tape & Reel | 52 Weeks | 2,500 |
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SI4464DY-T1-E3 | 2,500 | 52 Weeks | 2,500 |
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SI4464DY-T1-E3 | Cut Tape | 2,500 |
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| SI4464DY-T1-E3 | Cut Tape | 1 |
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| SI4464DY-T1-E3 | Tape & Reel | 2,500 |
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SI4464DY-T1-E3 | Reel | 2,500 |
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SI4464DY-T1-E3 | 230 |
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SI4464DY-T1-E3 | 1 |
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SI4464DY-T1-E3 | 53 Weeks | 2,500 |
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Vishay Intertechnologies SI4464DY-T1-GE3- Tape and Reel (Alt: SI4464DY-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4464DY-T1-GE3 | Tape & Reel | 52 Weeks | 2,500 |
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SI4464DY-T1-GE3 | Tape & Reel | 4,126 | 100 |
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| SI4464DY-T1-GE3 | Cut Tape | 4,126 | 1 |
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| SI4464DY-T1-GE3 | Tape & Reel | 2,500 |
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SI4464DY-T1-GE3 | Reel | 2,500 |
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| SI4464DY-T1-GE3 | Cut Tape | 10 |
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SI4464DY-T1-GE3 | 2,500 |
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SI4464DY-T1-GE3 | 53 Weeks | 2,500 |
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Vishay Siliconix SI4464DY-T1-E3MOSFET, POWER, N-CH, VDSS 200V, RDS(ON) 0.195OHM, ID 1.7A, SO-8,PD 1.5W, VGS +/-20V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4464DY-T1-E3 | Bulk | 653 | 3 Weeks | 1 |
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Vishay Siliconix SI4464DY-T1-GE3SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.7A I(D), 200V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4464DY-T1-GE3 | 40 |
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SI4464DY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Si4464DY
Abstract: Si4464DY-T1-E3 Si4464DY-T1-GE3 720-51 72051
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si4464dy2002/95/ecsi4464dy-t1-e3si4464dy-t1-ge3+3 | |
SI4464
Abstract: Si4464DY
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si4464dys-51095rev13-jun-05si4464 | |
Si4464DYContextual Info: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4464dy0-to-10v28-feb-03 | |
Si4464DY-T1-E3
Abstract: Si4464DY Si4464DY-T1 72051
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si4464dysi4464dy-t1si4464dy-t1-e308-apr-05+1 | |
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Contextual Info: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg |
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si4464dy2002/96/ecsi4464dy-t1-e3si4464dy-t1-ge3+1 | |
Si4464DY-T1-E3
Abstract: Si4464DY Si4464DY-T1
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si4464dysi4464dy-t1si4464dy-t1-e3 | |
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Contextual Info: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg |
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si4464dy2002/95/ecsi4464dy-t1-e3si4464dy-t1-ge3+3 | |
72051Contextual Info: Si4464DY New Product Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.2 0.260 @ VGS = 6.0 V 2.1 D TrenchFETr Power MOSFET D PWM Optimized for (Lowest Qg and Low RG) APPLICATIONS D Primary Side Switch |
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si4464dy08-apr-0572051 | |
Si4464DYContextual Info: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4464dy18-jul-08 | |
72051Contextual Info: Si4464DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • TrenchFET Power MOSFET • PWM Optimized for (Lowest Qg and Low RG) Pb-free Available |
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si4464dysi4464dy-t1si4464dy-t1-e318-jul-08+1 | |
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Contextual Info: SPICE Device Model Si4464DY www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si4464dy2002/95/ec2011/65/eujs709a+1 | |
72051Contextual Info: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg |
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si4464dy2002/95/ecsi4464dy-t1-e3si4464dy-t1-ge3+3 | |
Si4464DY
Abstract: 720-51 72051
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si4464dys-22099--rev02-dec-02720-51+1 | |
transistor a 1941
Abstract: AN609 Si4464DY
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si4464dyan60919-mar-07transistor a 1941 | |
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72051Contextual Info: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg |
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si4464dy2002/95/ecsi4464dy-t1-e3si4464dy-t1-ge3+2 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
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si3865bdv-t1-e3ct-ndsi4720cy-t1-e3ct-ndsi6924aedq-t1-e3ct-ndsi1040x-t1-e3tr-nd+16 | |
SI2333DS-T1-E3
Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
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si7415dn-t1-e3si7107dn-t1-e3si7913dn-t1-e3si7414dn-t1-e3+15 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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gp-20fsq510 equivalentbta12 6008bta16 6008+7 | |
STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
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02cz1002cz1102cz1202cz13+15 | |
GRM188R71C104K01D
Abstract: parallel mosfet SI4464DY-E3 AN1993 GENERAL SEMICONDUCTOR DIODE SMA 15A CRCW06031R00FNEA 24v active clamp forward converter FDC6333C GRM188R71C223K01D LM3406HV
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lm3406hvan-1993grm188r71c104k01dparallel mosfet+7 | |
q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
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sip41109sip41110sip4111175/2a+10 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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ad9272p462-ndlng295lfcp2up463-nd+11 | |