SI4464 Search Results
SI4464 Datasheets (7)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SI4464-B1B-FM | Silicon Laboratories | RF Transceivers, RF/IF and RFID, TXRX ISM EZ RADIO PRO 20QFN | Original | 56 | |||
SI4464-B1B-FMR | Silicon Laboratories | RF Transceivers, RF/IF and RFID, TXRX ISM EZ RADIO PRO 20QFN | Original | 56 | |||
SI4464-B1X-FM | Silicon Laboratories | RF Transceivers, RF/IF and RFID, TRANSCEIVER RF EZRADIO PRO 20QFN | Original | 56 | |||
SI4464DY | Vishay Siliconix | MOSFETs | Original | 43.08KB | 5 | ||
Si4464DY SPICE Device Model |
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N-Channel 200-V (D-S) MOSFET | Original | 103.08KB | 3 | ||
SI4464DY-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.7A 8-SOIC | Original | 9 | |||
SI4464DY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.7A 8-SOIC | Original | 9 |
SI4464 Price and Stock
Silicon Laboratories Inc SI4464-B1B-FMRIC RF TXRX ISM<1GHZ 20QFN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4464-B1B-FMR | Cut Tape | 5,854 | 1 |
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SI4464-B1B-FMR | 13,758 |
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SI4464-B1B-FMR | Cut Tape | 881 | 1 |
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SI4464-B1B-FMR | 14,120 |
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Vishay Siliconix SI4464DY-T1-E3MOSFET N-CH 200V 1.7A 8SO |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4464DY-T1-E3 | Cut Tape | 2,992 | 1 |
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SI4464DY-T1-E3 | Bulk | 2,248 | 3 Weeks | 1 |
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SI4464DY-T1-E3 | 30,000 | 1 |
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Vishay Siliconix SI4464DY-T1-GE3MOSFET N-CH 200V 1.7A 8SO |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4464DY-T1-GE3 | Cut Tape | 2,638 | 1 |
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SI4464DY-T1-GE3 | 40 |
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Silicon Laboratories Inc SI4464-B1B-FMIC RF TXRX ISM<1GHZ 20QFN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4464-B1B-FM | Tray | 1,449 | 1 |
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SI4464-B1B-FM | 1,708 |
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SI4464-B1B-FM | Bulk | 114 | 1 |
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SI4464-B1B-FM | 1 |
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SI4464-B1B-FM | 14,980 |
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Silicon Laboratories Inc SI4464-B1X-FMIC RF TXRX ISM<1GHZ 20QFN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4464-B1X-FM | Tube |
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SI4464 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si4464DY
Abstract: Si4464DY-T1-E3 Si4464DY-T1-GE3 720-51 72051
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Si4464DY 2002/95/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 18-Jul-08 720-51 72051 | |
SI4464
Abstract: Si4464DY
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Si4464DY S-51095Rev. 13-Jun-05 SI4464 | |
Si4464DYContextual Info: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4464DY 0-to-10V 28-Feb-03 | |
Si4464DY-T1-E3
Abstract: Si4464DY Si4464DY-T1 72051
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Si4464DY Si4464DY-T1 Si4464DY-T1-E3 08-Apr-05 72051 | |
Contextual Info: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg |
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Si4464DY 2002/96/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 18-Jul-08 | |
Si4464DY-T1-E3
Abstract: Si4464DY Si4464DY-T1
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Si4464DY Si4464DY-T1 Si4464DY-T1-E3 | |
Contextual Info: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg |
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Si4464DY 2002/95/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
72051Contextual Info: Si4464DY New Product Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.2 0.260 @ VGS = 6.0 V 2.1 D TrenchFETr Power MOSFET D PWM Optimized for (Lowest Qg and Low RG) APPLICATIONS D Primary Side Switch |
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Si4464DY 08-Apr-05 72051 | |
Si4464DYContextual Info: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4464DY 18-Jul-08 | |
72051Contextual Info: Si4464DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • TrenchFET Power MOSFET • PWM Optimized for (Lowest Qg and Low RG) Pb-free Available |
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Si4464DY Si4464DY-T1 Si4464DY-T1-E3 18-Jul-08 72051 | |
Contextual Info: SPICE Device Model Si4464DY www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si4464DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
72051Contextual Info: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg |
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Si4464DY 2002/95/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 72051 | |
Si4464DY
Abstract: 720-51 72051
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Si4464DY S-22099--Rev. 02-Dec-02 720-51 72051 | |
transistor a 1941
Abstract: AN609 Si4464DY
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Si4464DY AN609 19-Mar-07 transistor a 1941 | |
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72051Contextual Info: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg |
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Si4464DY 2002/95/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 11-Mar-11 72051 | |
Si4355/Si4455Contextual Info: AN655 R ANGE TE S T A P P LICATIO N FOR E Z R ADIO AND E Z R ADIO PRO ® 1. Introduction The range evaluation demo provides an easy way to evaluate the link budget of EZRadio® and EZRadioPRO® devices by performing a range test between two nodes. The range test demo implements Packet Error Rate PER |
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AN655 Si4012 Si4355 Si4455 Si4060 Si4063 Si4362 Si4460 Si4461 Si4355/Si4455 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS | |
BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
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SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 | |
SI2333DS-T1-E3
Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
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SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 | |
Contextual Info: AN633 PROGRAMMING GUIDE FOR E Z R A D IO P R O S i 4 X 6 X D E V I C E S 1. Introduction This document is intended to serve as a guide for application development with EZRadioPRO® radio ICs. It introduces the major parts of the hardware platform, such as the RF Pico board, which contains the radio and the |
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AN633 | |
STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
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02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B | |
GRM188R71C104K01D
Abstract: parallel mosfet SI4464DY-E3 AN1993 GENERAL SEMICONDUCTOR DIODE SMA 15A CRCW06031R00FNEA 24v active clamp forward converter FDC6333C GRM188R71C223K01D LM3406HV
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LM3406HV AN-1993 GRM188R71C104K01D parallel mosfet SI4464DY-E3 AN1993 GENERAL SEMICONDUCTOR DIODE SMA 15A CRCW06031R00FNEA 24v active clamp forward converter FDC6333C GRM188R71C223K01D | |
D434
Abstract: Si4063/Si4362 Product Selector Guide
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