SI2333 Search Results
SI2333 Datasheets (14)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI2333A-TP | Micro Commercial | Interface | Original | 484.31KB | 4 | ||
| SI2333CDS-T1-BE3 | Vishay Siliconix | P-CHANNEL 12-V (D-S) MOSFET | Original | 229.83KB | 9 | ||
| SI2333CDS-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 7.1A SOT23-3 | Original | 9 | |||
| SI2333CDS-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 7.1A SOT-23 | Original | 9 | |||
| SI2333DDS-T1-BE3 | Vishay Siliconix | P-CHANNEL 12-V (D-S) MOSFET | Original | 236.35KB | 10 | ||
| SI2333DDS-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6A SOT23 | Original | 10 | |||
| SI2333DS | Vishay | SI2333DS P-CH MOSFET SOT-23 | Original | 76.89KB | 6 | ||
| SI2333DS | Vishay Siliconix | MOSFETs | Original | 40.42KB | 5 | ||
| Si2333DS SPICE Device Model | Vishay | P-Channel 12-V (D-S) MOSFET | Original | 246.35KB | 3 | ||
| SI2333DST1 | Vishay Siliconix | SI2333DS P-CH MOSFET SOT-23 | Original | 75.03KB | 6 | ||
| SI2333DS-T1-BE3 | Vishay Siliconix | P-CHANNEL 12-V (D-S) MOSFET | Original | 160.66KB | 8 | ||
| SI2333DS-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 4.1A SOT23-3 | Original | 9 | |||
| SI2333DS-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 4.1A SOT23-3 | Original | 9 | |||
| SI2333-TP | Micro Commercial | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL MOSFET, SOT-23 PACKAGE | Original | 614.26KB |
SI2333 Price and Stock
Vishay Intertechnologies SI2333CDS-T1-BE3Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -20A; 2.5W; SOT23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2333CDS-T1-BE3 | 3,000 |
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SI2333CDS-T1-BE3 | Tape & Reel | 52 Weeks | 3,000 |
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SI2333CDS-T1-BE3 | 27,947 |
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SI2333CDS-T1-BE3 | Tape & Reel | 3,000 |
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| SI2333CDS-T1-BE3 | Bulk | 3,000 |
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SI2333CDS-T1-BE3 | Reel | 3,000 |
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SI2333CDS-T1-BE3 | 53 Weeks | 3,000 |
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Vishay Intertechnologies SI2333DDS-T1-GE3Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2333DDS-T1-GE3 | 1 |
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SI2333DDS-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SI2333DDS-T1-GE3 |
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SI2333DDS-T1-GE3 | Cut Tape | 1 |
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| SI2333DDS-T1-GE3 | Tape & Reel | 10 |
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| SI2333DDS-T1-GE3 | Tape & Reel | 3,000 |
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| SI2333DDS-T1-GE3 | Tape & Reel | 100 |
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SI2333DDS-T1-GE3 | Reel | 3,000 |
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SI2333DDS-T1-GE3 | 78 |
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| SI2333DDS-T1-GE3 | 6 | 1 |
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SI2333DDS-T1-GE3 | 13 |
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SI2333DDS-T1-GE3 | 65,750 |
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SI2333DDS-T1-GE3 | 54 Weeks | 3,000 |
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SI2333DDS-T1-GE3 | 53 Weeks | 3,000 |
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Micro Commercial Components SI2333-TPTransistor: P-MOSFET; Trench; unipolar; -12V; -6A; Idm: -20A; 1.1W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2333-TP | 1 |
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Vishay Intertechnologies SI2333CDS-T1-E3Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.7A; Idm: -20A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2333CDS-T1-E3 | 1 |
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SI2333CDS-T1-E3 | 1,330 | 10 |
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SI2333CDS-T1-E3 | Tape & Reel | 30 Weeks, 5 Days | 3,000 |
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SI2333CDS-T1-E3 | 123 |
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SI2333CDS-T1-E3 | Cut Strips | 1,330 | 1 |
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SI2333CDS-T1-E3 | Tape & Reel | 3,000 |
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| SI2333CDS-T1-E3 | Tape & Reel | 10 |
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| SI2333CDS-T1-E3 | Cut Tape | 1 |
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SI2333CDS-T1-E3 | Reel | 3,000 |
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SI2333CDS-T1-E3 | 921 |
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SI2333CDS-T1-E3 | 736 |
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SI2333CDS-T1-E3 | 53 Weeks | 3,000 |
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Vishay Intertechnologies SI2333CDS-T1-GE3Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 2.5W; SOT23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2333CDS-T1-GE3 | 1 |
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SI2333CDS-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SI2333CDS-T1-GE3 |
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Get Quote | ||||||||
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SI2333CDS-T1-GE3 | Cut Tape | 1 |
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| SI2333CDS-T1-GE3 | Tape & Reel | 3,000 |
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SI2333CDS-T1-GE3 | Reel | 3,000 |
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SI2333CDS-T1-GE3 | 12,954 |
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| SI2333CDS-T1-GE3 | 15 | 1 |
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SI2333CDS-T1-GE3 | 2,726 |
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| SI2333CDS-T1-GE3 | 2,726 |
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SI2333CDS-T1-GE3 | 45,000 |
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SI2333CDS-T1-GE3 | 15,000 | 54 Weeks | 3,000 |
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SI2333CDS-T1-GE3 | 42,000 | 53 Weeks | 3,000 |
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SI2333 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SI2333DS-T1-E3Contextual Info: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET |
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si2333dso-236ot-23si2333ds-t1-e3+3 | |
Si2333CDS
Abstract: Si2333CDS-T1-GE3 Si2333C
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si2333cds2002/95/eco-236ot-23+4 | |
SI2333DS-T1-E3
Abstract: Si2333DS Si2333CDS Si2333 SI2333DS-T1 Si2333CDS-T1-GE3 P-Channel MOSFET 12V SOT 23
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si2333cdssi2333dsot-23si2333cds-t1-ge3+6 | |
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Contextual Info: Si2333DDS Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A)a 0.028 at VGS = - 4.5 V - 6e 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V |
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si2333ddso-236ot-23si2333dds-t1-ge3+3 | |
si2333cdsContextual Info: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition |
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si2333cds2002/95/eco-236ot-23+3 | |
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Contextual Info: Si2333DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.032 @ VGS = -4.5 V -5.3 0.042 @ VGS = -2.5 V - 4.6 0.059 @ VGS = -1.8 V - 3.9 APPLICATIONS D Load Switch D PA Switch |
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si2333dso-236ot-23s-22121+1 | |
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Contextual Info: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition |
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si2333cds2002/95/eco-236ot-23+3 | |
Si2333CDS
Abstract: Si2333C SI2333DS-T1-E3 SI2333DS Si2333CDS-T1-E3 SI2333CDS-T1
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si2333cdssi2333dsot-23si2333cds-t1-ge3+5 | |
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Contextual Info: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition |
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si2333cds2002/95/eco-236ot-23+3 | |
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Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si2333DDS vs. Si2333CDS Description: P-Channel, 12 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2333DDS-T1-GE3 replaces Si2333CDS-T1-GE3 Si2333DDS-T1-GE3 replaces Si2333CDS-T1-E3 |
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si2333ddssi2333cdsot-23si2333dds-t1-ge3+3 | |
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Contextual Info: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET |
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si2333dso-236ot-23si2333ds-t1-e3+2 | |
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Contextual Info: Si2333DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.032 @ VGS = -4.5 V -5.3 0.042 @ VGS = -2.5 V - 4.6 0.059 @ VGS = -1.8 V - 3.9 APPLICATIONS D Load Switch D PA Switch |
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si2333dso-236ot-2318-jul-08 | |
Si2333DSContextual Info: SPICE Device Model Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si2333ds09-oct-02 | |
16267
Abstract: 5331 6038 Transistor 5331 AN609 Si2333CDS
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si2333cdsan60905-jun-0816267+3 | |
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74289
Abstract: SI2333DS-T1-E3 Si2333DS Si2331DS Si2333DS-T1
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si2333dssi2331dsot-23si2333ds-t1-e3+5 | |
Si2333DSContextual Info: SPICE Device Model Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si2333ds18-jul-08 | |
si2333dds
Abstract: si2333dd SI2333DDS-T1-GE3
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si2333ddso-236ot-23si2333dds-t1-ge3+4 | |
Si2333DS
Abstract: E3- marking E3 marking code
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si2333dso-236ot-23s-22121--rev+3 | |
si2333cds
Abstract: S-81824 1225 b
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si2333cds18-jul-08s-818241225 b | |
Si2333CDS
Abstract: Si2333CDS-T1-GE3
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si2333cds2002/95/eco-236ot-23+3 | |
Si2315BDS-T1-E3
Abstract: Si2333CDS SI2333CDS-T1-E3 SI2315BDS Si2315BDS-T1-GE3 SI2333CDS-T1-GE3 Si2315BDS-T1
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si2333cdssi2315bdsot-23si2333cds-t1-ge3+4 | |
E3 marking code
Abstract: Si2333DS E3- marking e3 Marking
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si2333dso-236ot-23e3 marking code+2 | |
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Contextual Info: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET |
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si2333dso-236ot-23si2333ds-t1-e3+4 | |
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Contextual Info: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition |
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si2333cds2002/95/eco-236ot-23+3 | |