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SI2331DS Datasheets (5)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI2331DS		Vishay Siliconix	MOSFETs	Original	PDF	39.49KB	5
SI2331DS		Vishay Siliconix	P-Channel 1.8-V (G-S) MOSFET	Original	PDF	235.05KB	3
Si2331DS SPICE Device Model		Vishay	P-Channel 1.8-V (G-S) MOSFET	Original	PDF	182.33KB	3
SI2331DS-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 3.2A SOT23-3	Original	PDF		9
SI2331DS-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 3.2A SOT23-3	Original	PDF		9

SI2331DS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si2331DS Contextual Info: Si2331DS Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 3.6 0.062 at VGS = - 2.5 V - 3.2 0.090 at VGS = - 1.8 V - 2.7 • TrenchFET Power MOSFETS Pb-free APPLICATIONS	Original	si2331ds o-236 ot-23 si2331ds-t1 +2si2331ds-t1-e3 08-apr-05	PDF
Contextual Info: Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 3.6 - 12 0.062 at VGS = - 2.5 V - 3.2 0.090 at VGS = - 1.8 V - 2.7 • Halogen-free Option Available • TrenchFET Power MOSFETS	Original	si2331ds o-236 ot-23 si2331ds-t1-e3 +4si2331ds-t1-ge3 2002/95/ec 2011/65/eu js709a	PDF
Si2331DS Abstract: E1 marking 7215-2 E1 marking code 72152 Contextual Info: Si2331DS New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.048 @ VGS = - 4.5 V - 3.6 0.062 @ VGS = - 2.5 V - 3.2 0.090 @ VGS = - 1.8 V - 2.7 APPLICATIONS D Load Switch	Original	si2331ds o-236 ot-23 si2331ds-t1 +770ulse s-03594--rev 31-mar-03 e1 marking 7215-2 e1 marking code 72152	PDF
74289 Abstract: SI2333DS-T1-E3 Si2333DS Si2331DS Si2333DS-T1 Contextual Info: Specification Comparison Vishay Siliconix Si2333DS vs. Si2331DS Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SOT-23 Identical Part Number Replacements Si2333DS-T1-E3 Replaces Si2331DS-T1-E3 Si2333DS-T1 Replaces Si2331DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	si2333ds si2331ds ot-23 si2333ds-t1-e3 +5si2331ds-t1-e3 si2333ds-t1 si2331ds-t1 31-oct-06 74289	PDF
Si2331DS Contextual Info: SPICE Device Model Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si2331ds 23-may-03	PDF
AN609 Abstract: Si2331DS 29121 74655 20535-5 Contextual Info: Si2331DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si2331ds an609 04-may-07 29121 +274655 20535-5	PDF
Si2331DS Contextual Info: SPICE Device Model Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si2331ds s-50383rev 21-mar-05	PDF
Contextual Info: Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 3.6 - 12 0.062 at VGS = - 2.5 V - 3.2 0.090 at VGS = - 1.8 V - 2.7 • Halogen-free Option Available • TrenchFET Power MOSFETS	Original	si2331ds o-236 ot-23 si2331ds-t1-e3 +3si2331ds-t1-ge3 2011/65/eu 2002/95/ec	PDF
Contextual Info: Si2331DS New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.048 @ VGS = - 4.5 V - 3.6 0.062 @ VGS = - 2.5 V - 3.2 0.090 @ VGS = - 1.8 V - 2.7 APPLICATIONS D Load Switch	Original	si2331ds o-236 ot-23 si2331ds-t1 +108-apr-05	PDF
72307 Abstract: Si2331DS Contextual Info: SPICE Device Model Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si2331ds 30-apr-04 72307	PDF
Si2331DS Contextual Info: SPICE Device Model Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si2331ds 18-jul-08	PDF
Si2331DS Contextual Info: Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 3.6 - 12 0.062 at VGS = - 2.5 V - 3.2 0.090 at VGS = - 1.8 V - 2.7 • Halogen-free Option Available • TrenchFET Power MOSFETS	Original	si2331ds o-236 ot-23 si2331ds-t1-e3 +2si2331ds-t1-ge3 18-jul-08	PDF
Siliconix Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123	Original	2n7000 2n7002 2n7002e 2n7002k +152sj574 2sk3240 bs170 bsh108 bss123 bss138 siliconix siliconix mosfet guide siliconix vn10km power mosfet cross reference guide fdc6323l fdn5618p 2n7002 siliconix equivalent of bs170 vn10km equivalent	PDF