SI4362 Search Results

Si4362DY

Contextual Info: SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4362DY

Contextual Info: Si4362DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V

73832

Abstract: 3203 MOSFET a 4503 data sheet A 4503 4503 MOSFET AN609 Si4362BDY
Contextual Info: Si4362BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4362DY

Contextual Info: SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74137

Abstract: datasheet 74137 Si4362BDY
Contextual Info: SPICE Device Model Si4362BDY Vishay Siliconix N-Channel 30-V D-S Reduced Qgd, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si446x

Contextual Info: AN643 Si446x/Si4362 RX LNA Matching 1. Introduction The purpose of this application note is to provide a description of the impedance matching of the RX differential low noise amplifier LNA on the Si446x/Si4362 family of RFICs. It is desired to simultaneously achieve two goals with the matching network:

Si4362BDY

Abstract: TB-17
Contextual Info: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous

Si4362DY

Contextual Info: \\\ SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

AN609

Abstract: Si4362DY
Contextual Info: Si4362DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

TB-17

Abstract: Si4362BDY Si4362BDY-T1-E3
Contextual Info: Si4362BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 19.8 0.0054 at VGS = 4.5 V 18.2 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

74137

Abstract: datasheet 74137 Si4362BDY
Contextual Info: SPICE Device Model Si4362BDY Vishay Siliconix N-Channel 30-V D-S Reduced Qgd, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous

ETH1-230LD

Abstract: ETH1-230L pa1558nl pA1558 PIN DIAGRAM on pad for RJ45 LTC4259A LTC4264 DF1501S SMAJ58A IEEE 802.11n
Contextual Info: LTC4264 High Power PD Interface Controller with 750mA Current Limit DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete High Power PD Interface Controller IEEE 802.3af Compliant Onboard 750mA Power MOSFET Complementary Power Good Outputs

bifa antenna

Abstract: 868 printed antenna design HTA 200-S Si446x/Si4362
Contextual Info: AN686 A NTENNAS FOR THE S i4 4 5 5 /4 3 5 X RF IC S 1. Introduction This application note provides guidelines and design examples to help users design antennas for the next generation EZRadio RF ICs. The matching principles for the Si4455 are described in detail in “AN693: Si4455

Contextual Info: AN632 WDS U SER ’ S G U ID E FOR E Z R ADIO PRO D EVICES 1. Introduction Wireless Development Suite WDS is a software utility used to configure and test the Silicon Labs line of ISM band RFICs. This document describes only the EZRadioPRO product-family-specific details of the WDS. It is

Contextual Info: AN632 WDS U SER ’ S G U ID E FOR E Z R ADIO PRO D EVICES 1. Introduction Wireless Development Suite WDS is a set of tools, reference designs and utilities supporting the Silicon Labs line of ISM band RFICs. 1.1. Wireless Development Suite WDS Chip Configurator (WDS CC) is a software utility used to configure and test the transceiver. The WDS Chip

340 opto isolator

Abstract: adapter 12v,2A 5V,2A kelvin 1102 HD01 LTC4269-1 LTC4269C-1 LTC4269CDKD-1 LTC4269I-1 LTC4269IDKD-1 PA1558NL
Contextual Info: LTC4269-1 IEEE 802.3at PD with Synchronous No-Opto Flyback Controller DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 4269-1 is an integrated Powered Device PD controller and switching regulator intended for high power IEEE 802.3at and 802.3af applications. The

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

170M

Abstract: IRF7811A Si4364DY Si4416DY Si4420DY Si4842DY Si4880DY in-line switch
Contextual Info: Presented at PCIM Conference, May 14-16, 2002, Nuremburg, Germany Ultra-High Cell Density TrenchFET Devices: Obtaining the Critical Balance of Switching Performance Versus On-Resistance and Its Associated Impact on Device Selection Guy Moxey: Vishay Siliconix, Bracknell, UK

NV18

Abstract: isl6247 transistor SMD w26 Socket AM2 Compal Electronics SMD SOT23 A53 rt8101l p25 BTQ00 RTL8101L compal
Contextual Info: A B C D E 1 2 1 BTQ00 Rev1.0 Schematics Document 2 Intel Prescott uFCPGA-478 / P4 Northwood with Springdale / ICH5 / nVIDIA NV18/34/31M chipset 2003/05/15 3 3 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

quanta

Abstract: T517 BD LM393 rs200m ATI RS200 ENE1420 lp832 t197 RS200MP Quanta MK2
Contextual Info: 1 2 3 4 5 6 7 8 01 MK2 MLB A A Rev. 1A B C D 01 02 03 04 05 Title Block Diagram Northwood CPU-1 Northwood CPU-2 RS200M-AGTL+ 31 32 33 34 35 Parallel Port Serial Port USB Connector PCU NS 87570 87570 Expansion,LED,SWs 06 07 08 09 10 RS200M-DDR I/F RS200M-PCI & AGP I/F

sis m650

Abstract: MIC5245 charger HC08 bluetooth keyboard and touchpad schematic CPC24 j3 SMD 20 pin connector sis 962 southbridge Preface Notebook Computer BR408 TI1410
Contextual Info: Preface Notebook Computer D400S/D410S Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

foxconn

Abstract: compal Compal Electronics BT122 DJ1U
Contextual Info: A B C D E F G H I J 1 1 2 2 3 3 LA-1511 REV1.0 Schematics Document uFCBGA/uFCPGA Northwood with Brookdale chipset 845MP+ICH3-M 4 5 4 5 6 6 BOM 記號 7 7 8 Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS,INC. AND CONTAINS CONFIDENTIAL

KB3910

Abstract: DCL51 LA-1881 LA1881REV foxconn Compal Electronics BGA421 RTL8101L compal RT810
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 DCL51 Schematics Document Banias uFCBGA/uFCPGA Package with Montara-GM Core Logic 2003-06-12 3 3 REV: 1.0 4 4 Compal Electronics, Inc. Title SCHEMATIC M/B LA-1881 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL