SI4955DY Search Results

SI4955DY Datasheets (4)

Filter by Manufacturer

Select Manufacturer

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4955DY		Vishay Siliconix	MOSFETs	Original	PDF	90.62KB	8
SI4955DY		Vishay Siliconix	Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs	Original	PDF	125.26KB	9
Si4955DY SPICE Device Model		Vishay	P-Channel 30-V/20-V (D-S) MOSFET	Original	PDF	254.8KB	4
SI4955DY-T1-E3		Vishay Siliconix	Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs	Original	PDF	125.26KB	9

SI4955DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si4955DY Contextual Info: SPICE Device Model Si4955DY Vishay Siliconix Dual P-Channel 30-V/20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4955dy 0-v/20-v 18-jul-08	PDF
Si4955DY Abstract: Si4955DY-T1-E3 Contextual Info: Si4955DY Vishay Siliconix New Product Asymmetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 - 30 Channel-2 - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 0.027 at VGS = - 4.5 V - 7.0	Original	si4955dy 0-v/20-v si4955dy-t1-e3 08-apr-05	PDF
Contextual Info: Si4955DY Vishay Siliconix New Product Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = −4.5 V	Original	si4955dy 0-v/20-v si4955dy--e3 si4955dy-t1--e3 +108-apr-05	PDF
52887 Abstract: 4132-22 6707 7408 4327 7408 and MOSFET 7121 AN609 Si4955DY Contextual Info: Si4955DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si4955dy an609 23-dec-05 52887 +64132-22 6707 7408 4327 7408 and mosfet 7121	PDF
Si4955DY Contextual Info: SPICE Device Model Si4955DY Vishay Siliconix Dual P-Channel 30-V/20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4955dy 0-v/20-v s-52446rev 28-nov-05	PDF
Si4955DY Contextual Info: SPICE Device Model Si4955DY Vishay Siliconix P-Channel 30-V/20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4955dy 0-v/20-v 0-to-10v 06-aug-03	PDF
Contextual Info: Si4955DY New Product Vishay Siliconix Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = - 10 V - 5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = - 4.5 V	Original	si4955dy 0-v/20-v si4955dy-t1 s-31509--rev +114-jul-03	PDF
Si4955DY Abstract: Si4955DY-T1-E3 A1224 Contextual Info: Si4955DY Vishay Siliconix New Product Asymmetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 - 30 Channel-2 - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 0.027 at VGS = - 4.5 V - 7.0	Original	si4955dy 0-v/20-v si4955dy-t1-e3 18-jul-08 +1a1224	PDF
Si4955DY Abstract: Si4955DY-T1 Contextual Info: Si4955DY Vishay Siliconix New Product Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = −4.5 V	Original	si4955dy 0-v/20-v si4955dy--e3 si4955dy-t1--e3 +3s-32411--rev 24-nov-03 si4955dy-t1	PDF