SI1407DL Search Results
SI1407DL Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Si1407DL | Vishay Intertechnology | P-Channel 1.8-V (G-S) MOSFET | Original | 69.27KB | 4 | ||
| SI1407DL | Vishay Siliconix | MOSFETs | Original | 53.46KB | 4 | ||
| Si1407DL SPICE Device Model | Vishay | P-Channel 1.8-V (G-S) MOSFET | Original | 180.05KB | 3 | ||
| SI1407DL-T1 | Vishay Intertechnology | P-Channel 1.8-V (G-S) MOSFET | Original | 69.27KB | 4 |
SI1407DL Price and Stock
Vishay Intertechnologies SI1407DL-T1-E3MOSFETs 12V 1.8A |
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SI1407DL-T1-E3 |
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SI1407DL-T1-E3 | 2,000 |
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SI1407DL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Si1407DLContextual Info: SPICE Device Model Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si1407dl18-jul-08 | |
4946
Abstract: 4946 mosfet AN609 Si1407DL
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si1407dlan60912-mar-074946+1 | |
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Contextual Info: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available |
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si1407dlot-363sc-70si1407dl-t1+2 | |
Si1407DL
Abstract: Si1407DL-T1 Si1407DL-T1-E3 A.4 SOT363
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si1407dlot-363sc-70si1407dl-t1+4 | |
Si1407DL
Abstract: Si1407DL-T1 Si1407DL-T1-E3
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si1407dlot-363sc-70si1407dl-t1+2 | |
Si1407DLContextual Info: Si1407DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –1.8 0.170 @ VGS = –2.5 V –1.5 0.225 @ VGS = –1.8 V –1.3 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code |
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si1407dlot-363sc-70s-01561--rev+1 | |
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Contextual Info: Si1407DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V "1.8 0.170 @ VGS = –2.5 V "1.5 0.225 @ VGS = –1.8 V "1.3 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code |
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si1407dlot-363sc-70s-99228--rev+1 | |
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Contextual Info: Si1407DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –1.8 0.170 @ VGS = –2.5 V –1.5 0.225 @ VGS = –1.8 V –1.3 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code |
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si1407dlot-363sc-70s-00118--rev+1 | |
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Contextual Info: Si1407DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –1.8 0.170 @ VGS = –2.5 V –1.5 0.225 @ VGS = –1.8 V –1.3 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code |
Original |
si1407dlot-363sc-7008-apr-05 | |
Si1407DLContextual Info: SPICE Device Model Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si1407dl25-mar-03 | |
VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
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si4831dysi4833dysi4852dysi4816dy+14 | |
Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
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2n70002n70022n7002e2n7002k+15 | |
GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
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si9165si9169600-matssop-20+12 |