S22160 Search Results

S22160

Abstract: VAC PULSE TRANSFORMER Pulse Transformer VAC 3 phase transformer 6 pin pulse transformer 8412 N pulse transformer Transformer 0.1V CS8401
Contextual Info: SPECIFICATIONS: Max 0.65 N.T. YYWW S22160 . 1. INDUCTANCE: @ 10 kHz, 0.1 Vrms, 1 - 3 > 225 uHy 3 2. DCR: mOHMS MAX 1 - 3 = 0.1 4 - 6 = 0.1 0.385 Max 3. LEAKAGE INDUCTANCE: 1 - 3, 0.1V @ 100kHz SHORT 4 - 6 < 0.5 uHy 1 0.250 Max 0.200 4 6 0.100 4. INTERWINDING CAPACITANCE:

Contextual Info: SPECIFICATIONS: Max 0.65 N.T. YYWW S22160 . 1. INDUCTANCE: @ 10 kHz, 0.1 Vrms, 1 - 3 > 225 uHy 3 2. DCR: mOHMS MAX 1 - 3 = 0.1 4 - 6 = 0.1 0.385 Max 3. LEAKAGE INDUCTANCE: 1 - 3, 0.1V @ 100kHz SHORT 4 - 6 < 0.5 uHy 1 0.250 Max 0.200 4 6 0.100 4. INTERWINDING CAPACITANCE:

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

G1125-02

Abstract: S2216 02 S1863 G1126-02
Contextual Info: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length

hamamatsu S875

Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
Contextual Info: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

AP 1100 R1

Abstract: S1190 S1190-01 S1190-03 S2216-01 S2840
Contextual Info: PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window M aterial*1 Package 0 /K 3-pin TO-18 S2840 S1190 O /K S1190-01 L S1190-03 0 /K S1190-13 O /L (p 0.8 0.5 320 to 1060 900 0.57 0.55 jS0.4 0.12 ji 0.8 0.5 320 to 1000 800 0.5 0.32 Effective

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

S1190 hamamatsu

Abstract: s1188 S1190-04 S2216-02 Q422 S2216 02 S1223-01 S1190-03 S-2216-02
Contextual Info: HAMAMATSU Pin CORP AT silicon Hnotoûioaes Q4229ßDJ9 HAMAMATSU CORP DE 89D Ò20Ò2 F eatures Window Materials S1188-02 U ltra-high speed response Q / K S1188-06 S 2216-01 U ltra-high speed response, low bias type Q /K S1190 High-speed response O'/K S 1 190-01

S1722-01

Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
Contextual Info: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR

S3407

Abstract: S4036 S5533
Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!

S5532

Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral

S1723-06

Abstract: S1722-01 S1190-01 PD46 BZZ16 S1223-01 s1188 S1723 S1723-04 S1723-08
Contextual Info: - 260- m & i± 7t % II min \ ßA E mW cm2 IE % • ± ^ Bi -fit 1i Ei Üx5 vK v: ln max inA; Vk !V; iß ft 14 j. ly typ (nmi 'T„ = 25'C) i r „ = 25*C' t, typ i/£S) ft- öi 3% 7 Ra fsj n R,. iß! Vk iV; Cr typ ;pF' VK iV': VK (V) T., ff; i* T O -18

Contextual Info: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current

S3407

Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity

S2216 02

Abstract: 54752 S1190-03
Contextual Info: Replacement Devices For former devices not listed in this catalog, we recommend using the following replacement devices. These de­ vices are not 100 % compatible with the former devices in specifications including their package dimensions. Please consult us for more details.

S1190-01

Contextual Info: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800

vn10

Abstract: 1X11 S2216-01
Contextual Info: Si PIN Photodiodes 1 Type No. Dimensional Outline (P.40)/ W indow M ate ria l*' Package 0K 3-pin TO 18 ; ' h :h M 1'ID S 1 11 ?f J 111 O k K s i 1<jo n O /L Active Area Spectral Response Range (mm) (mm2) <fi 0.8 0.5 ip 0 .4 0.12 $ 0.8 0.5 (nm) Photo Sensitivity S (A/W) Typ. Short Circuit

S3590-03

Abstract: S1190-01 S4753 S1190-03 S4752 S4751 S2216-01 S2216 02 S2839 S5533
Contextual Info: Replacement Devices For former devices not listed in this catalog, we recommend using the following replacement devices. These de­ vices are not 100 % compatible with the former devices in specifications including their package dimensions. Please consult us for more details.

S1190 hamamatsu

Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
Contextual Info: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K

G1961-01

Abstract: G1962-01 S1190 hamamatsu g1962 S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ
Contextual Info: HAMAMATSU liE CÔRP D • 422=^0=1 Q002S3ti S ■ T ^ 4 \ - S \ GaP Photodiodes Photosensitive surface Spectral Response Outline. Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) 190-520 440+30 Characteristics (25°C)

S2840

Contextual Info: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.

Contextual Info: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc