930NM Search Results

R758

Abstract: R636 R636-10 TPMSA0027EC R758-10
Contextual Info: PHOTOMULTlPLlER TUBES R636–10, R758–10 UV to Near IR R636–10:185 to 930 nm, R758–10:160 to 930nm Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response

Contextual Info: OPTE K T E C H N O L O G Y I N C n 4âE D uaf — m „ b ? cifi5fl0 0 0 0 1 31 0 717 • OTK TM -51 Optek Standard Photodiodes OPC925 R = .4 S A/W 930nm C =10p F © 10V l0 = 3 0 n A 0 1 0 V A = 0 .6 6 m m 1 ANOOE .0 4 0 1 .0 2 .0 3 2 (0 .8 1 ) ACTIVE AR EA

08D35

Abstract: OSD50-0 QD50-0 5902 LD20-0 LD35-0 MD100-0 MD25-0 QD100-0
Contextual Info: Series 0 General Purpose The Series 0 general purpose silicon photodiodes are designed to operate with a reverse bias voltage of up to 30 volts for applications where low capacitance or fast speed of response are important. These photodiodes are fabricated to maximize their responsivity in the 780-930nm range. The typical

TIES13A

Abstract: TIES13
Contextual Info: TIES13 TIES13A Gallium Arsenide Infrared-Emitting Diodes Select Products Here Go Designed to emit near-infrared radiant energy when forward biased FEATURES ● High output efficiency ● Hemispherically shaped chips with diameter of 36 mils ● Spectrally matched to silicon sensors . . . peak emission at 930nm

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

hamamatsu S875

Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
Contextual Info: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size

OP535

Contextual Info: L7TfiSaO DDODbflB 1 57E D OPTEK TECHNOLOGY INC OPTEK Product Bulletin OP535 July 1989 Replaces January 1985 NPN Silicon Photodarlington Type OP535 • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited

Contextual Info: niCROPAC INDUSTRIES INC 87019 42E D Di aQQ0fl3b b m PIPI INFRARED SECURE HERMETIC LED INDICATOR THi-te _ _ DESCRIPTION: These s o lid s ta te lam ps are h e rm e tic a lly sealed in TO-46 packages. They u tiliz e a u n iq ue in fra re d b lo c k in g lens to reduce

pc123y22

Abstract: gp2d04 GP2D021 GP1A040R GP2D12 IS471FsE GP2Y0A02YK S2S4A00F GP2S24BC GP2Y0A21YK
Contextual Info: ES: Eric Sunderhaus, JD: Jeremy Dietz, RS: Robert Stuart PART NUMBER BS100C BS500B BS520 MKT INT JD JD JD PART DESCRIPTION / REPLACEMENT Blue Sens. PD Blue Sens. PD Blue Sens. PD Lead Free Part Number Lead Free Version of Replacement BS100C0F BS500B0F

Contextual Info: PS5042-2 Through-hole Phototransistor/Right Angle Type Features Package Product features Right Angle type, Black Visible Radiation Cut Filter epoxy ・Photo Current : 0.4mA TYP. VCE=5V,Ee=1mW/cm2 ・Visible Radiation Cut Filter under 800nm ・No lead package

Contextual Info: PS5042-2 Through-hole Phototransistor/Right Angle Type Features Package Product features Right Angle type, Black Visible Radiation Cut Filter epoxy ・Photo Current : 0.4mA TYP. VCE=5V,Ee=1mW/cm2 ・Visible Radiation Cut Filter under 800nm ・No lead package

AP 1100 R1

Abstract: S1190 S1190-01 S1190-03 S2216-01 S2840
Contextual Info: PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window M aterial*1 Package 0 /K 3-pin TO-18 S2840 S1190 O /K S1190-01 L S1190-03 0 /K S1190-13 O /L (p 0.8 0.5 320 to 1060 900 0.57 0.55 jS0.4 0.12 ji 0.8 0.5 320 to 1000 800 0.5 0.32 Effective

S1190 hamamatsu

Abstract: s1188 S1190-04 S2216-02 Q422 S2216 02 S1223-01 S1190-03 S-2216-02
Contextual Info: HAMAMATSU Pin CORP AT silicon Hnotoûioaes Q4229ßDJ9 HAMAMATSU CORP DE 89D Ò20Ò2 F eatures Window Materials S1188-02 U ltra-high speed response Q / K S1188-06 S 2216-01 U ltra-high speed response, low bias type Q /K S1190 High-speed response O'/K S 1 190-01

Contextual Info: niCROPAC INDUSTRIES INC 45E D WM bll3b40 aDQaa3b b 53 MPI DESCRIPTION: These solid state lamps are herm etically sealed in TO-46 packages. They utilize a unique infrared blocking lens to reduce unused energy in accordance w ith the requirem ents of the Army Statem ent of Work on Infrared Lighting. The red and yellow

MI33H

Abstract: L11H 250nm MI-33H
Contextual Info: SILICON SENSORS INC 7S Ülf| 0353*123 GGOD3afl T | 8253922 SILICON SENSORS INC 75C 00328 T D SILICON PIN PHOTODIODES MI-33HL MI-33H #9.2* M l-11H # 5 . 4 ±et #4.81*6« #871*0 1 J*d± 1 r I 't*»-* T T% î JL »8 t r r r i# 4 ,a * « • B k o *81 TH “Tl.

S1722-01

Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
Contextual Info: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR

S2387

Contextual Info: Si Photodiodes Dimensional Outline Type No. Visible to IR Range, for Precision Photometry Active Package A rea Size ¡(P.40-44)/ Window Material* (mm) (mm) Effective Spectral Peak Active Response Sensitivity Wavelength A rea R ange Ap (m m 2) (nm ) (nm )

3365bq

Abstract: SI336
Contextual Info: Si Photodiodes Type No. iDimensional I Outline Package P.40-44 / Window Material* (mm) (UV to IR Range, for Precision Photometry) Active Effective Spectral Area Size Active Response Area Range Peak Sensitivity Wavelength Ap (mm2) (nm) (nm) (mm) Photo Sensitivity S (A/W)

Contextual Info: PIN Silicon Photodiodes 3 Active Area Effective Size Active Area (P.42, 43) (mm) (mm2) 2.77X2.77 7.7 Dimensional Type No. Outline Package S2506-02 S2506-04 S4707-01 © S5077 © S2973 © S3321 © Plastic mold 2.4X2.8 6.6 1.1X1.1 1.2 1X 3 3 ¿0.8 0.5 Peak

Contextual Info: PS5042-2 Through-hole Phototransistor/Right Angle Type Features Package Product features Right Angle type, Black Visible Radiation Cut Filter epoxy ・Photo Current : 0.4mA TYP. VCE=5V,Ee=1mW/cm2 ・Visible Radiation Cut Filter under 800nm ・Lead–free soldering compatible

TEYD5500

Contextual Info: TELEFUNKEN ELECTRONIC 17E D ^ • filBOOlb 00067*16 1 ■ AL6G TEYD5500 T'Ji -¡T2 TfiUIFttilMGIIfil electronic C r t t t w Itchnotofltes I •_ Silicon Photo PIN Diode N-Type in clear plastic package for plastic fiber connection

Contextual Info: PS5042-2 Through-hole Phototransistor/Right Angle Type Features Package Product features Right Angle type, Black Visible Radiation Cut Filter epoxy ・Photo Current : 0.4mA TYP. VCE=5V,Ee=1mW/cm2 ・Visible Radiation Cut Filter under 800nm ・No lead package

226e

Abstract: BC 227
Contextual Info: 0"i" bllicon nu r * ~J Dimensional Active Outline Type No. UV to Visible Range, for Precision Photometry, Suppressed IR Sensitivity nOtOOlOOGS P ackage A rea Size (P.38-40)/ Window Material* (mm) (mm) Photo Sensitivity S (A /W ) Peak Effective Spectral Active

ic741

Abstract: datasheet of ic741 Ic-741 IC741 datasheet 12c508 timer heart rate sensor digital frequency meter circuit diagram ic741 8 PIN light meter block diagram pin diagram of ic741
Contextual Info: Sensor Interface Light Meter Author: B. M. Dhananjaya Karnataka, India email: teekays@pentagon.com APPLICATION OPERATION To keep the circuit simple and small the internal 4MHz clock is used with satisfying accuracy. In case of very high accuracy measurements an external oscillator is