S1190 Search Results

AP 1100 R1

Abstract: S1190 S1190-01 S1190-03 S2216-01 S2840
Contextual Info: PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window M aterial*1 Package 0 /K 3-pin TO-18 S2840 S1190 O /K S1190-01 L S1190-03 0 /K S1190-13 O /L (p 0.8 0.5 320 to 1060 900 0.57 0.55 jS0.4 0.12 ji 0.8 0.5 320 to 1000 800 0.5 0.32 Effective

S1190 hamamatsu

Abstract: s1188 S1190-04 S2216-02 Q422 S2216 02 S1223-01 S1190-03 S-2216-02
Contextual Info: HAMAMATSU Pin CORP AT silicon Hnotoûioaes Q4229ßDJ9 HAMAMATSU CORP DE 89D Ò20Ò2 F eatures Window Materials S1188-02 U ltra-high speed response Q / K S1188-06 S 2216-01 U ltra-high speed response, low bias type Q /K S1190 High-speed response O'/K S 1 190-01

S3407

Abstract: S4036 S5533
Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!

S1190-01

Contextual Info: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800

S1337-33BR

Abstract: s4160 S3407 S1227-66BQ S5107 8S02
Contextual Info: Dimensional Outlines Unit : mm O S1226-18BQ etc. S2386-18L S1190-01 etc. COMMON TO CASE COMMON T O C AS E KSPDA0047EA O S1190-13 f ¿ 2 .5 + 0 .2 f 2.5 4 ± 0 .2 The w in dow protrudes 0.2m m Max. above the rim. K type borosilicale glass win dow protrudes 0.2mm Max.

S2858

Abstract: S2551-01 S1190-03 S1723-06 14 pin photodiode s1188 S1190-04 AT82 S1723-04
Contextual Info: PIN Silicon Photodiodes Type No. S1188-02 S1188-06 S 2216-01 S 2216-02 S2839 S2840 S1190 S1190-Q1 S1190-03 S1190-04 S1223 S1223-01 Package Effective Sensitive Area mm (mm) 3-pin TO-18 3-pin TO-18 3-pin TO-18 Radiant Sensitivity Peak Spectral Bp Wavelength

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

G1125-02

Abstract: S2216 02 S1863 G1126-02
Contextual Info: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length

diode s1 77

Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28

hamamatsu S875

Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
Contextual Info: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

D1650

Abstract: data transistor d1650 d1650 transistor D1760 D1740 d1680 D1720 D1750 d1780 d1640
Contextual Info: DEVICE STATE MACHINES HIPPI BiCMOS PECL CLOCKDEVICE GENERATOR S2020/S2021 SOURCE STATE MACHINES HIPPI APPLICATION NOTE S2020/S2021 SOURCE S2020 HIPPI SOURCE CONNECT CONTROL The S2020 Source Device meets the signalling protocol for the Hippi-Source as determined by ANSI X3.1831991 HiPPI-PH Mechanical Electrical and Signalling

S1722-01

Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
Contextual Info: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR

S5532

Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral

S1723-06

Abstract: S1722-01 S1190-01 PD46 BZZ16 S1223-01 s1188 S1723 S1723-04 S1723-08
Contextual Info: - 260- m & i± 7t % II min \ ßA E mW cm2 IE % • ± ^ Bi -fit 1i Ei Üx5 vK v: ln max inA; Vk !V; iß ft 14 j. ly typ (nmi 'T„ = 25'C) i r „ = 25*C' t, typ i/£S) ft- öi 3% 7 Ra fsj n R,. iß! Vk iV; Cr typ ;pF' VK iV': VK (V) T., ff; i* T O -18

diode marking L5 sot363

Abstract: VISHAY diode MARKING er VISHAY SOT LOT CODE marking L5 sot363 sot363 ON Marking DS vishay siliconix code marking
Contextual Info: _ SM906DL Vishay Siliconix New Product N-Channel 20-V D-S MOSFET PRODUCT SUMMARY r DS<on) (Œ ) lD (mA) 2.0 9 V q s = 4.5 V 250 2.5 V GS = 2.5 V 150 V DS(V) 20 SOT-363 S C-70 (6*Leads) Marking Code XX £ Lot Traceability

15 1e75

Abstract: 1E75 S1190-01 photocell
Contextual Info: _~ "V229609 HAMAMATSU XQftP %: , > il D E ^ E S T t^ Q 0D 1E75 I Ham am atsu H1941 and H1940 are opto-hybrid ICs specially designed for transm ission or reflection-m ode photoelectric relays using infrared LEDs and PIN silicon photocells. The H1941 is a light-em itting hybrid

Contextual Info: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current

S3407

Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity

S2216 02

Abstract: 54752 S1190-03
Contextual Info: Replacement Devices For former devices not listed in this catalog, we recommend using the following replacement devices. These de­ vices are not 100 % compatible with the former devices in specifications including their package dimensions. Please consult us for more details.

vn10

Abstract: 1X11 S2216-01
Contextual Info: Si PIN Photodiodes 1 Type No. Dimensional Outline (P.40)/ W indow M ate ria l*' Package 0K 3-pin TO 18 ; ' h :h M 1'ID S 1 11 ?f J 111 O k K s i 1<jo n O /L Active Area Spectral Response Range (mm) (mm2) <fi 0.8 0.5 ip 0 .4 0.12 $ 0.8 0.5 (nm) Photo Sensitivity S (A/W) Typ. Short Circuit

S3590-03

Abstract: S1190-01 S4753 S1190-03 S4752 S4751 S2216-01 S2216 02 S2839 S5533
Contextual Info: Replacement Devices For former devices not listed in this catalog, we recommend using the following replacement devices. These de­ vices are not 100 % compatible with the former devices in specifications including their package dimensions. Please consult us for more details.

S1190 hamamatsu

Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
Contextual Info: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K