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    G1746 Search Results

    G1746 Datasheets (1)

    Hamamatsu Photonics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    G1746
    Hamamatsu Photonics GaAsP photodiode Original PDF 134.06KB 4
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    Crystek Corporation CCSMA2-MM-RG174-6

    RF Cable Assemblies RG174 Shielded Cable SMA M/M 6" RA/RA
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    Mouser Electronics CCSMA2-MM-RG174-6 45
    • 1 $30.86
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    Crystek Corporation CCSMA-MM-RG174-6

    RF Cable Assemblies RG174 Shielded Cable SMA M/M 6" S/S
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    Mouser Electronics CCSMA-MM-RG174-6 24
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    Crystek Corporation CCSMA1-MM-RG174-6

    RF Cable Assemblies RG174 Shielded Cable SMA M/M 6" S/RA
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    Mouser Electronics CCSMA1-MM-RG174-6 18
    • 1 $28.56
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    Apex Tool Group LLC CDAG-1746

    Other Tools SOLID AUGER DRILL BIT, 17", 1 1/16"
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    Mouser Electronics CDAG-1746
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    RS CDAG-1746 Bulk 2 Weeks 1
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    Bimba Manufacturing Company UG-1746

    CYLINDER, ULTRAN RODLESS GOLD COUPLING STRENGTH; 1-1/2IN BORE ; STROKE: 46 INCH
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    RS UG-1746 Bulk 5 Weeks 1
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    G1746 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UV source led 254 nm peak

    Abstract: schottky photodiode G1746 G1747
    Contextual Info: PHOTODIODE GaAsP photodiode G1746, G1747 Schottky type with extended red sensitivity Features Applications l Low dark current l Extended red sensitivity l High UV sensitivity l Analytical instrument l Color identification l UV detection • General ratings / Absolute maximum ratings


    Original
    g1746g1747se-171kgpd1006e01+2uv source led 254 nm peakschottky photodiode PDF

    G1746

    Abstract: G1747
    Contextual Info: PHOTODIODE GaAsPフォトダイオード G1746, G1747 ショットキ型, 赤感度延長タイプ 特長 用途 l 低暗電流 l 赤感度延長タイプ l 高紫外感度 l 分析機器 l 色識別 l 紫外線検出 • 一般定格/絶対最大定格


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    g1746g1747kgpda0006ja PDF

    schottky photodiode

    Abstract: G1746 G1747 uv photodiode, GaP UV source led 254 nm peak
    Contextual Info: PHOTODIODE GaAsP photodiode G1746, G1747 Schottky type with extended red sensitivity Features Applications l Low dark current l Extended red sensitivity l High UV sensitivity l Analytical instrument l Color identification l UV detection • General ratings / Absolute maximum ratings


    Original
    g1746g1747se-171kgpd1006e01+3schottky photodiodeuv photodiode, gapuv source led 254 nm peak PDF

    Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077


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    0003b2fi633nm930nms2506-04+6s2973s3321s4707-01s5573kspda0061eakspda0062ea PDF

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Contextual Info: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


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    00g2534254nm560nm633nm+8g1125-02g1126-02g1127-02g2119g1745g1746s2216 02s1863 PDF

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


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    s4282-11s4285-40s4810kspda00060ea+16s2833s2833-01kspda0061eakspda0062ead003tg2711-01c2719s1190-01s1223 pin photodiodes4160 equivalents12271010bs4753s3407-01hamamatsu s1336s4160g1118 PDF

    ir remote power meter

    Abstract: spectrophotometer G1746
    Contextual Info: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry


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    s1336/ss1226/s1227ngths2381+9s2382s5139s6045s5343s5344s5345ir remote power meterspectrophotometerg1746 PDF

    P873-G35-552

    Abstract: p1760-04 P873-13
    Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


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    s-114dk-2000jan/87p873-g35-552+2p1760-04p873-13 PDF

    PA2733GR

    Abstract: PA2733
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2733GR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2733GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on.


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    pa2733grpa2733gr-e1pa2733gr-e1-apa2733gr-e2+2pa2733gr-e2-apa2733 PDF

    S5532

    Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


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    s4280s5531s4752s5533+6s4753s4751s5532kspda0061eakspda0062ead003t PDF

    GaP photodiode APD

    Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
    Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


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    s1087s1087-01g1115g1116+15g1117g1118g1120g1126-02s6801-01s6926gap photodiode apduv photodiode, gapgap photodiode pins-4036uv photodiodepin photodiodes3590gap photodiodeschottky photodiode PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    S3407

    Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


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    0dd311-43vs1087930nm+7560nm630nms4011s4160s4160-01s1133s3407 PDF

    S1190-01

    Contextual Info: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


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    g003b24s2839s1190-01s1190-13+6s1190-03s2840s1190s2216-01633nm930nm PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    g1962-01

    Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
    Contextual Info: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt


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    100lux2856k1q-90g1117+11g1120g2711g1735g1736g1737g1738g1962-01u1116g1126-02hamamatsu pin to53x1015 PDF

    S2840

    Contextual Info: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.


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    0003b5gs2829s4404-01s2041+7s2042kspda0061eakspda0062ead003tg2711-01s2833-04s2840 PDF

    Contextual Info: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc


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    0g03bs1223660nm780nm+6830nms1223-01s3071s1863-0114mmto-8s3883 PDF

    Contextual Info: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000


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    00031as1406-03s1406-04s1406-05+6s1406-06s5590s5591s3887g1957s1446 PDF

    S2306

    Abstract: S6926 S2366
    Contextual Info: Dimensional Outlines The lead intervals shown in the dimensinal outlines are center-to-center dimensions at the root of the leads. Dimensions are typical values unless otherwise specified. The values in parentheses are reference values. Unit: mm 0 S5821-01, etc.


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    s2386-18ls5821-01kspda0047eakspda0048ea+9cpina0029eas5821-03s5971s5973-01s2973-01g2711-01s2306s6926s2366 PDF