G1747 Search Results

UV source led 254 nm peak

Abstract: schottky photodiode G1746 G1747
Contextual Info: PHOTODIODE GaAsP photodiode G1746, G1747 Schottky type with extended red sensitivity Features Applications l Low dark current l Extended red sensitivity l High UV sensitivity l Analytical instrument l Color identification l UV detection • General ratings / Absolute maximum ratings

G1746

Abstract: G1747
Contextual Info: PHOTODIODE GaAsPフォトダイオード G1746, G1747 ショットキ型, 赤感度延長タイプ 特長 用途 l 低暗電流 l 赤感度延長タイプ l 高紫外感度 l 分析機器 l 色識別 l 紫外線検出 • 一般定格／絶対最大定格

Contextual Info: GaAsP photodiode G1747 Schottky type with extended red sensitivity Features Applications Low dark current Analytical instruments Extended red sensitivity Color identification High UV sensitivity UV detection Structure / Absolute maximum ratings Parameter Package

schottky photodiode

Abstract: G1746 G1747 uv photodiode, GaP UV source led 254 nm peak
Contextual Info: PHOTODIODE GaAsP photodiode G1746, G1747 Schottky type with extended red sensitivity Features Applications l Low dark current l Extended red sensitivity l High UV sensitivity l Analytical instrument l Color identification l UV detection • General ratings / Absolute maximum ratings

Contextual Info: PRODUCT PREVIEW Smart5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 28F200B5, 28F400B5, 28F800B5 • SmartVoltage Technology — Smart5™ Flash: 5V Reads, 5V or 12V Writes — Increased Programming Throughput at 12V V pp ■ Very High-Performance Read — 2-, 4-Mbit: 60 ns Access Time

G1125-02

Abstract: S2216 02 S1863 G1126-02
Contextual Info: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length

ir remote power meter

Abstract: spectrophotometer G1746
Contextual Info: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

Contextual Info: 82078 44 PIN CHMOS SINGLE-CHIP FLOPPY DISK CONTROLLER • Small Footprint and Low Height Package ■ Enhanced Power Management — Application Software Transparency — Programmable Powerdown Command — Save and Restore Commands for Zero-Volt Powerdown — Auto Powerdown and Wakeup

UV source led 254 nm peak

Contextual Info: GaAsP Photodiodes Schottky Types Type No. Dim ensional Outline (P.46 to 48)/ W indow Material *1 Area X Peak Sensitivity Wavelength X.p (mm) (mm2) (nm) (nm) TO-5 2.3 X 2.3 5.2 4.6 X 4.6 21 10.1 X 10.1 98 Active Effective Active Package Area Size Spectral

Contextual Info: GaAsP Photodiodes Schottky Types Type No. Dimensional Outline (P.44-46)/ Window Material Package Peak Spectral Active Area Effective Response Sensitivity Active Area Wavelength Size Range Ap A (mm) (mm2) (nm) (nm) 190 to 680 610 Photo Sensitivity S Typ. (A/W)

UV LED 254nm

Abstract: led uv 254nm
Contextual Info: GaAsP Photodiodes Schottky Types Type No. Dimensional Outline (P.38-40)/ W indow Material * Package Peak Spectral Active Area Effective Response Sensitivity Active Area Wavelength Size Range (mm) (mm2) A Àp (nm) (nm) Photo Sensitivity S Typ. (A/W) Ap GaP He-Ne

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

S3884

Abstract: G1116
Contextual Info: GaAsP Photodiodes Soecfrai Response Hange Ü Typ« No U nle ss o tn e rw ise noted, Typ T a - 2. Package Peak SensÜMy W »wíe«#ti Ä# Phcflp Sanwfcvtfy 5 k&Q (am (AAV) ’ »imi {mm} ShW! CînXHt Current tec 100 h V»*10 mV 2456 * Mg? Xsâp • fiarfc

g1962-01

Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
Contextual Info: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt

UV LED 254nm

Contextual Info: GaAsP Photodiodes Schottky Types Type No. Outline (P.40-42)/ Window Material * Package Peak Spectral Active Area Effective Response Sensitivity Wavelength Active Area Size Range Ap A (mm) (mm2) (nm) (nm) 190 to 680 610 Photo Sensitivity S Typ. (A/W) GaP He-Ne