G2119 Search Results

G1126-02

Abstract: G1127-02 G2119
Contextual Info: PHOTODIODE GaAsPフォトダイオード G1126-02, G1127-02, G2119 ショットキ型, 紫外~可視域用 特長 用途 l 低暗電流 l 高紫外感度 l 分析機器 l 色識別 l 紫外線検出 • 一般定格／絶対最大定格 型名 G1126-02 G1127-02

Contextual Info: GaAsPフォトダイオード G1126-02 G1127-02 G2119 ショットキ型紫外～可視域用 特長 用途 低暗電流 分析機器 高紫外感度 色識別 紫外線検出 構成／絶対最大定格 型名 外形 寸法図/ 窓材 G1126-02 G1127-02

G1126-02

Abstract: G1127-02 G2119 FA 8 600
Contextual Info: PHOTODIODE GaAsP photodiode G1126-02, G1127-02, G2119 Schottky type for UV to visible range Features Applications l Low dark current l High UV sensitivity l Analytical instruments l Color identification l UV detection • General ratings / Absolute maximum ratings

Contextual Info: GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/

UV source led 254 nm peak

Abstract: G1126-02
Contextual Info: GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/

G1127-02

Abstract: G1126-02 G2119
Contextual Info: PHOTODIODE GaAsP photodiode G1126-02, G1127-02, G2119 Schottky type for UV to visible range Features Applications l Low dark current l High UV sensitivity l Analytical instruments l Color identification l UV detection • General ratings / Absolute maximum ratings

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

G1125-02

Abstract: S2216 02 S1863 G1126-02
Contextual Info: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

S5532

Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral

Contextual Info: GaAsP Photodiodes Schottky Types Type No. Dimensional Outline (P.44-46)/ Window Material Package Peak Spectral Active Area Effective Response Sensitivity Active Area Wavelength Size Range Ap A (mm) (mm2) (nm) (nm) 190 to 680 610 Photo Sensitivity S Typ. (A/W)

UV LED 254nm

Abstract: led uv 254nm
Contextual Info: GaAsP Photodiodes Schottky Types Type No. Dimensional Outline (P.38-40)/ W indow Material * Package Peak Spectral Active Area Effective Response Sensitivity Active Area Wavelength Size Range (mm) (mm2) A Àp (nm) (nm) Photo Sensitivity S Typ. (A/W) Ap GaP He-Ne

S3407

Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity

Contextual Info: GaAsP Photodiodes Schottky Types “ Type No. Dimensional Outline (P.47 to 49)/ Window Material *1 Package i Area X Peak Sensitivity Wavelength Àp (mm) (mm2) (nm) (nm) 2.3 X 2.3 5.2 Active Area Size Spectral Response Range Effective Photo Sensitivity S (A/W)

g1962-01

Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
Contextual Info: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt

S2840

Contextual Info: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.

Contextual Info: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc

Contextual Info: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000

UV LED 254nm

Contextual Info: GaAsP Photodiodes Schottky Types Type No. Outline (P.40-42)/ Window Material * Package Peak Spectral Active Area Effective Response Sensitivity Wavelength Active Area Size Range Ap A (mm) (mm2) (nm) (nm) 190 to 680 610 Photo Sensitivity S Typ. (A/W) GaP He-Ne